US5861345A
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US
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In-situ pre-PECVD oxide deposition process for treating SOG
Assignee: Individual
•
Filing: 1997-09-08
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Granted: 1999-01-19
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Expires: 2017-09-08
Abstract
Abstract An in situ inter-dielectric process is disclosed for forming multilevel metal structures. The process includes the steps of: (1) forming an SOG layer on an uneven semiconductor surface, (2) treating a surface of the SOG layer with a plasma in a PECVD chamber, and (3) forming a PECVD oxide layer on the treated surface in the same PECVD chamber. The operating parameters for performing the in situ treatment are as follows: - Gas: N2O or C2F6 - Pressure: 4-6 Torr - Temperature: 300-400 DEG C. - Power: 200-400 Watts - Gap: 300-800 mil - Flow: 500-1500 sccm - Time: 5-15 sec - Thus, the treatment can be performed in the same PECVD chamber used to form a PECVD oxide layer on the treated SOG layer. Furthermore, the SOG layer surface may be oxidized to produce an organic deficient SiOx layer at the surface of the SOG layer prior to performing the treatment step (2).
Inventors
- 👤 Chin-hao Chou
- 👤 Yu-Chen Yang
- 👤 Shing-Hsiang Hung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 12:25
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10P; H10P95/00; H10P95/06; H10W20/092; H10W20/093; H10W20/096; H10W20/097; H10W20/40; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
85 words
A process for constructing an inter-metal dielectric comprising the steps of: forming an SOG layer on an uneven semiconductor surface, treating a surface of said SOG layer with one of a N 2 O and C 2 F 6 reactive gas, in a PECVD chamber for a time between about 5 and 15 seconds, to chemically react with said SOG layer for forming an organic-deficient treated SOG layer, and forming a PECVD oxide layer on said treated SOG layer surface in said same PECVD chamber.
Claim 2
Dependent Claim
85 words
A process for constructing an inter-metal dielectric comprising the steps of: forming an SOG layer on an uneven semiconductor surface, treating a surface of said SOG layer with one of a N 2 O and C 2 F 6 reactive gas, in a PECVD chamber for a time between about 5 and 15 seconds, to chemically react with said SOG layer for forming an organic-deficient treated SOG layer, and forming a PECVD oxide layer on said treated SOG layer surface in said same PECVD chamber.
Claim 3
Dependent Claim
75 words
The method of claim 1 further comprising, prior to said step of forming said SOG layer, the steps of: patterning a metal layer on a semiconductor surface to form one or more isolated metal regions separated by portions of said semiconductor surface, forming an initial PECVD oxide layer on said metal regions and said portions of said semiconductors surface separating said metal regions so as that said initial PECVD oxide layer has an uneven surface.
Claim 4
Dependent Claim
17 words
The method of claim 1 wherein said SOG layer is more smooth than said uneven semiconductor surface.
Claim 5
Dependent Claim
42 words
The method of claim 1 wherein, in said step of forming said SOG layer, more than one SOG layer is formed on said uneven semiconductor surface, and wherein, in said step of treating, a surface of an uppermost SOG layer is treated.
Claim 6
Dependent Claim
38 words
The method of claim 2 further comprising the steps of: patterning said PECVD oxide and said SOG layers to form passages to said metal regions, and forming metal filled vias filling said passages and contacting said metal regions.
Claim 7
Dependent Claim
19 words
The method of claim 1 wherein said step of treating is performed at a pressure of about 4-6 Torr.
Claim 8
Dependent Claim
18 words
The method of claim 6 wherein said step of treating is performed at a power of 200-400 Watts.
Claim 9
Dependent Claim
18 words
The method of claim 1 wherein said step of treating is performed at a power of 200-400 Watts.
Claim 10
Dependent Claim
34 words
The method of claim 1 wherein said plasma used in said step of treating is formed from a gas selected from the group consisting of N 2 O and C 2 F 6 .
Claim 11
Dependent Claim
21 words
The method of claim 1 comprising, before said step of treating, the step of oxidizing a surface of said SOG layer.
Claim 12
Dependent Claim
24 words
The method of claim 10 wherein said step of oxidizing produces an organic deficient SiO x layer at said surface of said SOG layer.
Claim 13
Dependent Claim
20 words
The method of claim 1 wherein said step of treating improves adhesion of said PECVD layer to said SOG layer.
Claim 14
Dependent Claim
24 words
The method of claim 1 wherein said cooperation of said steps of treating and forming said PECVD layer reduces cracking in said SOG layer.
Claim 15
Dependent Claim
26 words
The method of claim 1 wherein said steps of treating and forming said PECVD layer avoid exposing said SOG layer to an ambient environment there between.
Claim 16
Dependent Claim
93 words
A process for constructing an inter-metal dielectric comprising the steps of: forming an SOG layer on an uneven semiconductor surface, treating a surface of said SOG layer with one of a N 2 O and C 2 F 6 reactive gas in a PECVD chamber at a pressure between about 4 and 6 Torr for a time between about 5 and 15 seconds, to chemically react with said SOG layer for forming an organic-deficient treated SOG layer, and forming a PECVD oxide layer on said treated SOG layer surface in said PECVD chamber.
Claim 17
Dependent Claim
93 words
A process for constructing an inter-metal dielectric comprising the steps of: forming an SOG layer on an uneven semiconductor surface, treating a surface of said SOG layer with one of a N 2 O and C 2 F 6 reactive gas in a PECVD chamber at a pressure between about 4 and 6 Torr for a time between about 5 and 15 seconds, to chemically react with said SOG layer for forming an organic-deficient treated SOG layer, and forming a PECVD oxide layer on said treated SOG layer surface in said PECVD chamber.
Claim 18
Dependent Claim
94 words
A process for constructing an inter-metal dielectric comprising the steps of: forming an SOG layer on an uneven semiconductor surface, treating a surface of said SOG layer with one of a N 2 O and C 2 F 6 reactive gas in a PECVD chamber at a power level between about 200 and 400 Watts for a time between about 5 and 15 seconds to chemically react with said SOG layer for forming an organic-deficient treated SOG layer, and forming a PECVD oxide layer on said treated SOG layer surface in said PECVD Chamber.
Claim 19
Dependent Claim
94 words
A process for constructing an inter-metal dielectric comprising the steps of: forming an SOG layer on an uneven semiconductor surface, treating a surface of said SOG layer with one of a N 2 O and C 2 F 6 reactive gas in a PECVD chamber at a power level between about 200 and 400 Watts for a time between about 5 and 15 seconds to chemically react with said SOG layer for forming an organic-deficient treated SOG layer, and forming a PECVD oxide layer on said treated SOG layer surface in said PECVD Chamber.
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