US5830804A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Encapsulated dielectric and method of fabrication
Assignee: Cypress Semiconductor Corp
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Filing: 1996-06-28
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Granted: 1998-11-03
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Expires: 2016-06-28
Abstract
Abstract A method of encapsulating a dielectric. According to the method of the present invention, a disposable post is formed over a portion of a substrate. Next, a first dielectric layer is formed over the substrate and the disposable post. A second dielectric layer is then formed over the first dielectric layer. Next, a third dielectric layer is formed over the second dielectric layer. A portion of the third dielectric layer is then removed so as to reveal the disposable post. The disposable post is then removed to form an opening.
Inventors
- 👤 James M. Cleeves
- 👤 Krishnaswamy Ramkumar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:02
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/031; H10W20/063; H10W20/069; H10W20/0696; H10W20/074; H10W20/076; H10W20/077; H10W20/093; H10W20/097
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
78 words
A method of encapsulating a dielectric, said method comprising the steps of: forming a post over or on a substrate; forming a first dielectric layer over or on said substrate and said post; forming a second dielectric layer over or on said first dielectric; forming a third dielectric layer over or on said second dielectric layer; removing at least a portion of said third dielectric layer to reveal said post; and removing said post to form an opening.
Claim 2
Independent Claim
78 words
A method of encapsulating a dielectric, said method comprising the steps of: forming a post over or on a substrate; forming a first dielectric layer over or on said substrate and said post; forming a second dielectric layer over or on said first dielectric; forming a third dielectric layer over or on said second dielectric layer; removing at least a portion of said third dielectric layer to reveal said post; and removing said post to form an opening.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein said portion of said third dielectric layer is removed by plasma etching.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein said portion of said third dielectric layer is removed by chemical-mechanical polishing.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein said second dielectric layer is a spin-on-glass layer.
Claim 6
Dependent Claim
13 words
The method of claim 1 wherein said second dielectric layer is a polyimide.
Claim 7
Dependent Claim
18 words
The method of claim 1 wherein said second dielectric layer is a material having a low dielectric constant.
Claim 8
Dependent Claim
25 words
The method of claim 1 further comprising the step of: after depositing said second dielectric layer, subjecting said second dielectric layer to a thermal process.
Claim 9
Dependent Claim
59 words
The method of claim 1, wherein said semiconductor substrate further comprises a conductive line, said method comprising the steps of: depositing a post material over or on a semiconductor substrate and said a conductive line; and patterning said post material to form said post on said conductive line; wherein removing said post forms an opening over said conductive line.
Claim 10
Dependent Claim
21 words
The method of claim 8 further comprising the step of: depositing a conductive material into said opening over said conductive line.
Claim 11
Dependent Claim
28 words
The method of claim 8 further comprising the step of: heating said second dielectric after forming said second dielectric layer and prior to forming said third dielectric layer.
Claim 12
Dependent Claim
29 words
The method of claim 8 further comprising the step of: after removing said post and prior to depositing said conductive material, exposing said opening to an O 2 plasma.
Claim 13
Dependent Claim
11 words
The method of claim 8 wherein said post material is photoresist.
Claim 14
Dependent Claim
20 words
The method of claim 8 wherein said first dielectric layer is an oxide formed by atmospheric pressure chemical vapor deposition.
Claim 15
Dependent Claim
20 words
The method of claim 8 wherein said first dielectric layer is an oxide formed by low pressure chemical vapor deposition.
Claim 16
Dependent Claim
20 words
The method of claim 8 wherein said first dielectric layer is an oxide formed by plasma enhanced chemical vapor deposition.
Claim 17
Dependent Claim
13 words
The method of claim 8 wherein said first dielectric layer is silicon nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-02 | 2002-05-04 | 2002-11-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-02 | 2006-05-04 | 2006-11-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-02 | 2010-05-04 | 2010-11-03 | $7700.00 | Window Closed / Lapsed |