US5409861A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a via plug in a semiconductor device
Assignee: SK Hynix Inc
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Filing: 1994-09-15
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Granted: 1995-04-25
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Expires: 2014-09-15
Abstract
Abstract A method of forming a via plug in a semiconductor device is disclosed. Metal nuclei are formed on the surface of the metal layer underlying the via hole. The metal layer, which is partially exposed between metal nuclei, is etched by means of a wet etching method, and accordingly, a plurality of etching grooves is formed on the partially exposed surface of the metal layer. As a result, the formation of such grooves has the effect of increasing the bottom surface area of the via hall, thereby increasing the adhesive strength to a contact surface of the via hall and decreasing the via resistance.
Inventors
- 👤 Kyeon K. Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 09:00
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/031; H10W20/056; Y; Y10; Y10S; Y10S148/00; Y10S148/138
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
131 words
A method of forming a via plug in a semiconductor device comprises; forming a first metal layer on a substrate and sequentially depositing a first, second and third insulating layer on the resulting substrate and then planarizing said third insulating layer; etching a desired portion of said third, second and first insulating layer using a contact mask until said first metal layer is exposed, thereby forming a via hole; pretreating said via hole by the dry etching method and then, forming metal nuclei on the surface of said first metal layer at the bottom of said via hole; etching said first metal layer exposed between said metal nuclei so that a plurality of etching grooves is formed on said first metal layer; and forming a via plug on said via hole.
Claim 2
Independent Claim
131 words
A method of forming a via plug in a semiconductor device comprises; forming a first metal layer on a substrate and sequentially depositing a first, second and third insulating layer on the resulting substrate and then planarizing said third insulating layer; etching a desired portion of said third, second and first insulating layer using a contact mask until said first metal layer is exposed, thereby forming a via hole; pretreating said via hole by the dry etching method and then, forming metal nuclei on the surface of said first metal layer at the bottom of said via hole; etching said first metal layer exposed between said metal nuclei so that a plurality of etching grooves is formed on said first metal layer; and forming a via plug on said via hole.
Claim 3
Dependent Claim
39 words
The method of claim 1, wherein said first metal layer exposed between said metal nuclei is etched by the wet etchant which the etching selectivity of said first metal layer is greater than said that of said metal nuclei.
Claim 4
Dependent Claim
15 words
The method of claim 1, wherein said via plug is formed in the LPCVD reactor.
Claim 5
Dependent Claim
16 words
The method of claim 1, wherein the magnitude of each nuclei is 500 to 1000 Å.
Claim 6
Dependent Claim
15 words
The method of claim 1, wherein said via hole is pretreated in the RIE reactor.
Claim 7
Dependent Claim
21 words
The method of claim 1, wherein said via hole is pretreated by a NF 3 , SF 6 or Ar sputter.
Claim 8
Dependent Claim
16 words
The method of claim 1, wherein said etching grooves are formed using the buffered oxide etchant.
Claim 9
Dependent Claim
13 words
The method of claim 1, wherein said metal nuclei are formed by tungsten.
Claim 10
Dependent Claim
13 words
The method of claim 1, wherein said metal nuclei are formed by aluminum.
Claim 11
Dependent Claim
13 words
The method of claim 1, wherein said metal nuclei are formed by copper.
Claim 12
Dependent Claim
13 words
The method of claim 1, wherein said metal nuclei are formed by molybdenum.
Claim 13
Dependent Claim
13 words
The method of claim 1, wherein said metal nuclei are formed by titanium.
Claim 14
Dependent Claim
13 words
The method of claim 1, wherein said metal nuclei are formed by cobalt.
Claim 15
Dependent Claim
13 words
The method of claim 1, wherein said metal nuclei are formed by chromium.
References Cited (Backward Citations)
JPS6261323A
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JPS62156820A
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US5320979A
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US5232872A
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JPH0456237A
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US5198389A
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US5270256A
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JPH05259110A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-04-24 | 1998-10-24 | 1999-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-24 | 2002-10-24 | 2003-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-24 | 2006-10-24 | 2007-04-25 | $7700.00 | Window Closed / Lapsed |