US5270256A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a guard wall to reduce delamination effects
Assignee: Intel Corp
•
Filing: 1991-11-27
•
Granted: 1993-12-14
•
Expires: 2011-11-27
Abstract
Abstract A method of forming a guard wall for a semiconductor die is described. A dielectric layer is deposited over a semiconductor substrate. The dielectric layer is patterned to form a guard wall opening extending through the dielectric layer. The guard wall opening lies adjacent to an electrically active region of the die. The guard wall opening has a pattern without any straight line segments greater than about 10 μm long. A first layer is deposited over the substrate and etched to form a first layer sidewall spacer along a side of the guard wall opening. A second layer is deposited within the guard wall opening to form the guard wall.
Inventors
- 👤 Melton C. Bost
- 👤 Robert A. Gasser
- 👤 Shi-Ning Yang
- 👤 Timothy L. Deeter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 02:19
CPC Classifications
H; H10; H10W; H10W42/00; H10D; H10D62/00; H10D62/50; H10D62/57; H10W20/00; H10W20/01; H10W74/00; H10W74/10; H10W74/131; H10W74/137
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
124 words
A method of forming a guard wall for a semiconductor die comprising the steps of: depositing a dielectric layer over a semiconductor substrate; patterning the dielectric layer to form a guard wall opening extending through the dielectric layer, the guard wall opening lying adjacent to an electrically active region of the die, the guard wall opening having a main section and a plurality of cross sections, the cross sections being at an angle to the main section; depositing a first layer over the substrate; etching the first layer to form at least one first layer sidewall spacer along a side of the main section of the guard wall opening; and depositing a second layer within the guard wall opening to form the guard wall.
Claim 2
Independent Claim
124 words
A method of forming a guard wall for a semiconductor die comprising the steps of: depositing a dielectric layer over a semiconductor substrate; patterning the dielectric layer to form a guard wall opening extending through the dielectric layer, the guard wall opening lying adjacent to an electrically active region of the die, the guard wall opening having a main section and a plurality of cross sections, the cross sections being at an angle to the main section; depositing a first layer over the substrate; etching the first layer to form at least one first layer sidewall spacer along a side of the main section of the guard wall opening; and depositing a second layer within the guard wall opening to form the guard wall.
Claim 3
Dependent Claim
31 words
The method of claim 1, wherein the opening has a pattern selected from the group consisting of stitched, serpentine, square wave, rounded wave, saw tooth, dog bone, and complex dog bone.
Claim 4
Dependent Claim
16 words
The method of claim 2, wherein the guard wall opening laterally surrounds the electrically active region.
Claim 5
Dependent Claim
25 words
The method of claim 1, wherein the dielectric layer comprises a material selected from the group consisting of silicon dioxide, silicon nitride, and silicon oxynitride.
Claim 6
Dependent Claim
26 words
The method of claim 1, wherein the first layer comprises a material selected from the group consisting of a metal, a metallic compound, and polycrystalline silicon.
Claim 7
Dependent Claim
32 words
The method of claim 1, wherein the second layer comprises a material selected from the group consisting of a metal, a metallic compound, polycrystalline silicon, silicon dioxide, silicon nitride, and silicon oxynitride.
Claim 8
Dependent Claim
39 words
The method of claim 1 further comprising the step of forming a field oxide area over the substrate and a channel region adjacent to the field oxide area wherein the guard wall opening is formed over the channel region.
Claim 9
Dependent Claim
21 words
The method of claim 7 further comprising the step of roughening the channel region surface prior to depositing the second layer.
Claim 10
Dependent Claim
22 words
The method of claim 1, wherein an electrical contact to the electrically active region is formed simultaneously with the guard wall opening.
Claim 11
Dependent Claim
32 words
The method of claim 1 further comprising the steps of: forming a silicide region on the semiconductor substrate; and removing the silicide layer from the main section of the guard wall opening.
Claim 12
Dependent Claim
37 words
The method of claim 10, wherein the main section of the guard wall opening has a width greater than the width of said silicide region, such that the sidewall spacer is not formed over the silicide layer.
Claim 13
Dependent Claim
26 words
The method of claim 10, wherein the silicide layer is comprised of a material selected from the group consisting of titanium, cobalt, molybdenum, tungsten, and tantalum.
Claim 14
Dependent Claim
26 words
The method as described in claim 1 wherein the cross sections are disposed at a distance along the main section of approximately 10 μm or less.
Claim 15
Dependent Claim
19 words
The method as described in claim 13 wherein the cross sections have a smaller width than the main section.
Claim 16
Dependent Claim
29 words
The method as described in claim 14 wherein the cross sections have a width of approximately 1 μm and the main section has a width of approximately 3 μm.
Claim 17
Dependent Claim
20 words
The method as described in claim 13 wherein at least some of the first layer remains in the cross sections.
Claim 18
Dependent Claim
19 words
The method as described in claim 1 wherein the cross sections have a smaller width than the main section.
Claim 19
Dependent Claim
20 words
The method as described in claim 17 wherein at least some of the first layer remains in the cross sections.
Claim 20
Dependent Claim
29 words
The method as described in claim 17 wherein the cross sections have a width of approximately 1 μm and the main section has a width of approximately 3 μm.
Claim 21
Dependent Claim
20 words
The method as described in claim 1 wherein at least some of the first layer remains in the cross sections.
Claim 22
Independent Claim
152 words
A method of forming a guard wall for a semiconductor die comprising the steps of: forming a silicide layer on a semiconductor substrate; depositing a dielectric layer over the substrate; patterning the dielectric layer to form a guard wall opening extending through the dielectric layer, the guard wall opening lying adjacent to an electrically active region of the die, the guard wall opening exposing the silicide layer, the guard wall opening having a width greater than a width of the silicide layer; depositing a first layer over the substrate including in the guard wall opening and in contact openings; etching the first layer from portions of the guard wall opening to form at least one first layer sidewall spacer along a side of the guard wall opening wherein the sidewall spacer does not contact the silicide layer; and depositing a second layer within the guard wall opening to form the guard wall.
Claim 23
Independent Claim
152 words
A method of forming a guard wall for a semiconductor die comprising the steps of: forming a silicide layer on a semiconductor substrate; depositing a dielectric layer over the substrate; patterning the dielectric layer to form a guard wall opening extending through the dielectric layer, the guard wall opening lying adjacent to an electrically active region of the die, the guard wall opening exposing the silicide layer, the guard wall opening having a width greater than a width of the silicide layer; depositing a first layer over the substrate including in the guard wall opening and in contact openings; etching the first layer from portions of the guard wall opening to form at least one first layer sidewall spacer along a side of the guard wall opening wherein the sidewall spacer does not contact the silicide layer; and depositing a second layer within the guard wall opening to form the guard wall.
Claim 24
Dependent Claim
31 words
The method of claim 21, wherein the opening has a pattern selected from the group consisting of stitched, serpentine, square wave, rounded wave, saw tooth, dog bone, and complex dog bone.
Claim 25
Dependent Claim
16 words
The method of claim 22, wherein the guard wall opening laterally surrounds the electrically active region.
Claim 26
Dependent Claim
32 words
The method of claim 21, wherein the guard wall opening width is no less than the sum of the width of silicided region and twice the width of the sidewall spacer's base.
Claim 27
Dependent Claim
26 words
The method of claim 21, wherein the silicide layer is comprised of a material selected from the group consisting of titanium, cobalt, molybdenum, tungsten, and tantalum.
Claim 28
Dependent Claim
25 words
The method of claim 21, wherein the dielectric layer comprises a material selected from the group consisting of silicon dioxide, silicon nitride, and silicon oxynitride.
Claim 29
Dependent Claim
26 words
The method of claim 21, wherein the first layer comprises a material selected from the group consisting of a metal, a metallic compound, and polycrystalline silicon.
Claim 30
Dependent Claim
32 words
The method of claim 21, wherein the second layer comprises a material selected from the group consisting of a metal, a metallic compound, polycrystalline silicon, silicon dioxide, silicon nitride, and silicon oxynitride.
Claim 31
Dependent Claim
39 words
The method of claim 21 further comprising the step of forming a field oxide area over the substrate and a channel region adjacent to the field oxide area wherein the guard wall opening is formed over the channel region.
Claim 32
Dependent Claim
21 words
The method of claim 29 further comprising the step of roughening the channel region surface prior to depositing the second layer.
Claim 33
Dependent Claim
22 words
The method of claim 21, wherein an electrical contact to the electrically active region is formed simultaneously with the guard wall opening.
Claim 34
Dependent Claim
33 words
The method as described in claim 21 wherein the guard wall opening has a main section and a plurality of cross sections, the cross sections being at an angle to the main section.
Claim 35
Dependent Claim
26 words
The method as described in claim 32 wherein the cross sections are disposed at a distance along the main section of approximately 10 μm or less.
Claim 36
Dependent Claim
20 words
The method as described in claim 33 wherein at least some of the first layer remains in the cross sections.
Claim 37
Dependent Claim
19 words
The method as described in claim 32 wherein the cross sections have a smaller width than the main section.
Claim 38
Dependent Claim
20 words
The method as described in claim 32 wherein at least some of the first layer remains in the cross sections.
References Cited (Backward Citations)
US4096622A
Cited
US4137109A
Cited
US4261095A
Cited
US4414737A
Cited
US4691435A
Cited
JPS58202550A
Cited
US4507853A
Cited
US4549914A
Cited
US4656732A
Cited
US4722910A
Cited
JPS63211755A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-13 | 1997-06-14 | 1997-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-13 | 2001-06-14 | 2001-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-13 | 2005-06-14 | 2005-12-14 | $7700.00 | Window Closed / Lapsed |