Integrated circuit contact technique

Claim 2

Method comprising: forming a first impurity region in a single crystal semiconductor substrate, said substrate having a second impurity region contiguous to the first, forming a transfer layer of polysilicon overlying the substrate and, in contact with both said first and second regions, and heating said transfer layer at a temperature and for a time sufficient to cause significant transfer of impurities from said first region to said second region.

Claim 3

Method comprising: forming a first region of a first conductivity type in a semiconductor substrate, said first region having contiguous thereto a second region said second region having the opposite conductivity type and a doping level substantially less than the doping level of the first region, forming a transfer layer of polysilicon over said substrate in contact with both first and second regions, and heating said substrate to a temperature and for a time sufficient to cause diffusion of impurities through said transfer layer from said first region to said second region and conversion of said second region to the first conductivity type.

Claim 4

Method comprising: forming a first region of a first conductivity type in a semiconductor substrate, said first region having contiguous thereto a second region said second region having the opposite conductivity type and a doping level substantially less than the doping level of the first region, forming a transfer layer of polysilicon over said substrate in contact with both first and second regions, and heating said substrate to a temperature and for a time sufficient to cause diffusion of impurities through said transfer layer from said first region to said second region and conversion of said second region to the first conductivity type.

Claim 5

Method comprising: forming a heavily doped region of one conductivity type in a semiconductor substrate said region extending into the surface of the substrate and having at least one adjacent surface region of the opposite conductivity type, said heavily doped region having an impurity level substantially higher than that of the adjacent region, said heavily doped region having a width W at the surface of the substrate, forming a dielectric layer over the substrate, masking the dielectric layer with a mask having an opening W' with a width of the order of 0.75 W, said opening being predominantly in vertical registration with said heavily doped region but offset so as to overlie part of said adjacent surface region, selectively etching substantially through said dielectric layer using said mask to form a window in the dielectric layer, depositing a contact layer comprising amorphous silicon or polysilicon into said window to form a contact to said heavily doped region and said part of the adjacent surface region, and heating the polysilicon contact layer at a temperature and for a time sufficient to cause impurities from said heavily doped region to diffuse through the polysilicon contact layer into said adjacent region and convert said adjacent region to the same conductivity type as the heavily doped region.

Claim 6

Method comprising: forming a heavily doped region of one conductivity type in a semiconductor substrate said region extending into the surface of the substrate and having at least one adjacent surface region of the opposite conductivity type, said heavily doped region having an impurity level substantially higher than that of the adjacent region, said heavily doped region having a width W at the surface of the substrate, forming a dielectric layer over the substrate, masking the dielectric layer with a mask having an opening W' with a width of the order of 0.75 W, said opening being predominantly in vertical registration with said heavily doped region but offset so as to overlie part of said adjacent surface region, selectively etching substantially through said dielectric layer using said mask to form a window in the dielectric layer, depositing a contact layer comprising amorphous silicon or polysilicon into said window to form a contact to said heavily doped region and said part of the adjacent surface region, and heating the polysilicon contact layer at a temperature and for a time sufficient to cause impurities from said heavily doped region to diffuse through the polysilicon contact layer into said adjacent region and convert said adjacent region to the same conductivity type as the heavily doped region.

Claim 7

Method for forming complementary devices comprising; forming an insulating layer over a semiconductor substrate, forming at least two openings in said insulating layer, forming an impurity region of a first conductivity type in a first of said openings and an impurity region of the opposite conductivity type in the other of said openings in a manner such that at least said first opening exposes a region of the second conductivity type as well as said region of the first conductivity type, said regions being contiguous, forming a polysilicon or amorphous silicon transfer layer covering said openings, including the sidewalls thereof, and covering at least a portion of each of said aforementioned impurity regions, heating the substrate and the transfer layer to diffuse impurities from one of said contiguous regions through said transfer layer to the other, and forming metal contacts in said openings.

Claim 8

Method for forming complementary devices comprising; forming an insulating layer over a semiconductor substrate, forming at least two openings in said insulating layer, forming an impurity region of a first conductivity type in a first of said openings and an impurity region of the opposite conductivity type in the other of said openings in a manner such that at least said first opening exposes a region of the second conductivity type as well as said region of the first conductivity type, said regions being contiguous, forming a polysilicon or amorphous silicon transfer layer covering said openings, including the sidewalls thereof, and covering at least a portion of each of said aforementioned impurity regions, heating the substrate and the transfer layer to diffuse impurities from one of said contiguous regions through said transfer layer to the other, and forming metal contacts in said openings.

Claim 9

Method according to claim 4 in which said heating step diffuses impurities into the portions of the transfer layer covering the sidewalls of the openings.

Claim 10

Method according to claim 4 in which said insulating layer includes a layer of doped glass.

Claim 11

Method according to claim 6 in which said doped glass layer is covered with a layer of undoped insulator.