US5219787A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Trenching techniques for forming channels, vias and components in substrates
Assignee: Samsung Electronics Co Ltd
•
Filing: 1992-02-24
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Granted: 1993-06-15
•
Expires: 2012-02-24
Abstract
Abstract Trenching techniques for forming a channel partially through and a via completely through the insulating layer of a substrate are disclosed. With additional steps the channel can form an electrically conductive line, an electrode of an integrated capacitor, or an optical waveguide.
Inventors
- 👤 David H. Carey
- 👤 Douglass A. Pietila
- 👤 David M. Sigmond
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:15
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/085; H05; H05K; H05K3/00; H05K3/0011; H05K3/0017; H05K3/0026; H05K3/0032; H05K3/0041; H05K3/0044; H05K3/005; H10P; H10P50/00; H10P50/73; H10W20/082; H10W20/40; H10W70/00; H10W70/01; H10W70/05; H10W70/095; H05K2201/00; H05K2201/01; H05K2201/0137; H05K2201/0166; H05K2201/09; H05K2201/09209; H05K2201/095; H05K2201/09563; H05K2203/00; H05K2203/01; H05K2203/0104; H05K2203/0108; H05K2203/02; H05K2203/025; H05K2203/05; H05K2203/0548; H05K2203/0554; H05K2203/0562; H05K2203/0574; H05K2203/10; H05K2203/107; H05K2203/11; H05K2203/1189; H05K3/0023; H05K3/0035; H05K3/10; H05K3/107; H05K3/38; H05K3/388; H05K3/40; H05K3/4038; H05K3/4076; H05K3/42; H05K3/422; H05K3/46; H05K3/4644; H05K3/4661; H10W20/0884; H10W20/0886
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
268 words
A method for fabricating a channel and via in the insulating layer of a substrate so as to provide an insulating layer on a base with a horizontal channel in the top surface of and partially through the thickness of the insulating layer, and adjacent to the channel a vertical via in the top surface of and completely through the thickness of the insulating layer, comprising the steps of: depositing a first mask on a base wherein the first mask contains an opening which defines the region outside the via and exposes a portion of the base, depositing a first insulating layer on the first mask and the exposed portion of the base, removing the first mask and any of the first insulating layer thereon from the substrate, thereby removing the portion of the first insulating layer in the via and exposing the portion of the base beneath the via, depositing a second mask on the first insulating layer and the exposed portion of the base beneath the via wherein the second mask contains an opening which defines the region outside the channel and the via and exposes a portion of the first insulating layer, depositing a second insulating layer on the second mask and the exposed portion of the first insulating layer, and removing the second mask and any of the second insulating layer thereon from the substrate, thereby removing the portion of the second insulating layer in the channel and the via, exposing the portion of the first insulating layer beneath the channel and exposing and the previously exposed portion of the base beneath the via.
Claim 2
Independent Claim
268 words
A method for fabricating a channel and via in the insulating layer of a substrate so as to provide an insulating layer on a base with a horizontal channel in the top surface of and partially through the thickness of the insulating layer, and adjacent to the channel a vertical via in the top surface of and completely through the thickness of the insulating layer, comprising the steps of: depositing a first mask on a base wherein the first mask contains an opening which defines the region outside the via and exposes a portion of the base, depositing a first insulating layer on the first mask and the exposed portion of the base, removing the first mask and any of the first insulating layer thereon from the substrate, thereby removing the portion of the first insulating layer in the via and exposing the portion of the base beneath the via, depositing a second mask on the first insulating layer and the exposed portion of the base beneath the via wherein the second mask contains an opening which defines the region outside the channel and the via and exposes a portion of the first insulating layer, depositing a second insulating layer on the second mask and the exposed portion of the first insulating layer, and removing the second mask and any of the second insulating layer thereon from the substrate, thereby removing the portion of the second insulating layer in the channel and the via, exposing the portion of the first insulating layer beneath the channel and exposing and the previously exposed portion of the base beneath the via.
Claim 3
Dependent Claim
36 words
The method of claim 1 wherein at least one of the first and second masks is deposited as a layer and then patterned, and is selected from the group consisting of photoresist, silicon-dioxide, silicon-nitrides and metals.
Claim 4
Dependent Claim
32 words
The method of claim 1 wherein at least one of the first and second insulating layers is selected from the group consisting of polymers, silicon-dioxide, nitrides, oxynitrides, spin on glasses, and solgels.
Claim 5
Dependent Claim
21 words
The method of claim 1 wherein at least one of the first and second masks is removed by a dry etch.
Claim 6
Dependent Claim
21 words
The method of claim 1 wherein at least one of the first and second masks is removed by wet chemical etching.
Claim 7
Dependent Claim
59 words
The method of claim 1 wherein at least one of the steps of removing the first mask and removing the second mask further includes, planarizing the top surface of the substrate until said top surface is smooth and comprises the mask and the insulating layer in the opening in the mask, and then removing the mask from the substrate.
Claim 8
Dependent Claim
28 words
The method of claim 6 wherein said planarizing the top surface of the substrate is performed by applying a rotating polishing pad in the presence of a slurry.
Claim 9
Dependent Claim
53 words
The method of claim 1 wherein at least one of the steps of removing the first mask and removing the second mask further includes, removing the insulating layer from the sidewalls of the mask without removing all the insulating layer from the opening in the mask, and removing the mask from the substrate.
Claim 10
Dependent Claim
18 words
The method of claim 8 wherein the insulating layer is removed from the sidewalls by a dry etch.
Claim 11
Dependent Claim
19 words
The method of claim 8 wherein the insulating layer is removed from the sidewalls by a wet chemical etch.
Claim 12
Dependent Claim
55 words
The method of claim 1 wherein the thickness of the first insulating layer defines the distance from the bottom of the channel to the base, the thickness of the second insulating layer defines the depth of the channel, and the combined thickness of the first and second insulating layers defines the depth of the via.
Claim 13
Independent Claim
95 words
A method for fabricating a via in the insulating layer of a substrate, comprising the steps of: depositing a mask on a base of the substrate wherein the mask contains an opening which defines the region outside the via and exposes a portion of the base; depositing an insulating layer on the mask and the exposed portion of the base; and removing the mask and any of the insulating layer thereon from the substrate, thereby removing the portion of the insulating layer in the via and exposing the portion of the base beneath the via.
Claim 14
Independent Claim
95 words
A method for fabricating a via in the insulating layer of a substrate, comprising the steps of: depositing a mask on a base of the substrate wherein the mask contains an opening which defines the region outside the via and exposes a portion of the base; depositing an insulating layer on the mask and the exposed portion of the base; and removing the mask and any of the insulating layer thereon from the substrate, thereby removing the portion of the insulating layer in the via and exposing the portion of the base beneath the via.
Claim 15
Independent Claim
250 words
A method for fabricating a channel and via in the insulating layer of a substrate so as to provide an insulating layer on a base with a horizontal channel in the top surface of and partially through the thickness of the insulating layer, and adjacent to the channel a vertical via in the top surface of and completely through the thickness of the insulating layer comprising the steps of: depositing a first insulating layer on the base; providing a first mask over the first insulating layer wherein the first mask defines the via and exposes a portion of the first insulating layer, removing the portion of the first insulating layer in the via, thereby exposing the portion of the base beneath the via, removing the first mask from the first insulating layer, depositing a second mask on the first insulating layer and the exposed portion of the base beneath the via wherein the second mask contains an opening which defines the region outside the channel and the via and exposes a portion of the first insulating layer, depositing a second insulating layer on the second mask and the exposed portion of the first insulating layer, and removing the second mask and any of the second insulating layer thereon from the substrate, thereby removing the portion of the second insulating layer in the channel and the via, exposing the portion of the first insulating layer beneath the channel and exposing and the previously exposed portion of the base beneath the via.
Claim 16
Independent Claim
250 words
A method for fabricating a channel and via in the insulating layer of a substrate so as to provide an insulating layer on a base with a horizontal channel in the top surface of and partially through the thickness of the insulating layer, and adjacent to the channel a vertical via in the top surface of and completely through the thickness of the insulating layer comprising the steps of: depositing a first insulating layer on the base; providing a first mask over the first insulating layer wherein the first mask defines the via and exposes a portion of the first insulating layer, removing the portion of the first insulating layer in the via, thereby exposing the portion of the base beneath the via, removing the first mask from the first insulating layer, depositing a second mask on the first insulating layer and the exposed portion of the base beneath the via wherein the second mask contains an opening which defines the region outside the channel and the via and exposes a portion of the first insulating layer, depositing a second insulating layer on the second mask and the exposed portion of the first insulating layer, and removing the second mask and any of the second insulating layer thereon from the substrate, thereby removing the portion of the second insulating layer in the channel and the via, exposing the portion of the first insulating layer beneath the channel and exposing and the previously exposed portion of the base beneath the via.
Claim 17
Independent Claim
243 words
A method for fabricating a channel and via in the insulating layer of a substrate so as to provide an insulating layer on a base with a horizontal channel in the top surface of and partially through the thickness of the insulating layer, and adjacent to the channel a vertical via in the top surface of and completely through the thickness of the insulating layer, comprising the steps of: depositing a first mask on a base wherein the first mask contains an opening which defines the region outside the via and exposes a portion of the base, depositing a first insulating layer on the fist mask and the exposed portion of the base, removing the first mask and any of the first insulating layer thereon from the substrate, thereby removing the portion of the first insulating layer in the via and exposing the portion of the base beneath the via, depositing a second insulating a layer on the first insulating layer and the exposed portion of the base, providing a second mask over the second insulating layer wherein the second mask defines the channel and the via and exposes a portion of the second insulating layer, removing the portion of the second insulating layer in the channel and the via, thereby exposing the portion of the first insulating layer beneath the channel and the previously exposed portion of the base beneath the via, and removing the second mask from the second insulating layer.
Claim 18
Independent Claim
243 words
A method for fabricating a channel and via in the insulating layer of a substrate so as to provide an insulating layer on a base with a horizontal channel in the top surface of and partially through the thickness of the insulating layer, and adjacent to the channel a vertical via in the top surface of and completely through the thickness of the insulating layer, comprising the steps of: depositing a first mask on a base wherein the first mask contains an opening which defines the region outside the via and exposes a portion of the base, depositing a first insulating layer on the fist mask and the exposed portion of the base, removing the first mask and any of the first insulating layer thereon from the substrate, thereby removing the portion of the first insulating layer in the via and exposing the portion of the base beneath the via, depositing a second insulating a layer on the first insulating layer and the exposed portion of the base, providing a second mask over the second insulating layer wherein the second mask defines the channel and the via and exposes a portion of the second insulating layer, removing the portion of the second insulating layer in the channel and the via, thereby exposing the portion of the first insulating layer beneath the channel and the previously exposed portion of the base beneath the via, and removing the second mask from the second insulating layer.
Claim 19
Independent Claim
21 words
The method of claims 1, 13, 14, further comprising the step of: depositing an electrical conductor into the channel and via.
Claim 20
Dependent Claim
11 words
The method of claim 15 wherein the electrical conductor is copper.
Claim 21
Dependent Claim
61 words
The method of claim 15, further comprising the step of: planarizing the top surface of the substrate so that the electrical conductor remains only in the channel and via and is otherwise removed from the top surface of the substrate, thereby forming an electrically conductive horizontal channel interconnected to an electrically conductive vertical via in the insulating layer of the substrate.
Claim 22
Dependent Claim
25 words
The method of claim 17 wherein the planarization of the substrate is performed by applying a rotating polishing pad in the presence of a slurry.
Claim 23
Dependent Claim
29 words
The method of claim 12 wherein the mask is deposited as a layer and then patterned, and is selected from the group consisting of photoresist, silicon-dioxide, silicon-nitrides and metals.
Claim 24
Dependent Claim
25 words
The method of claim 12 wherein the insulating layer is selected from the group consisting of polymers, silicon-dioxide, nitrides, oxynitrides, spin on glasses, and solgels.
Claim 25
Dependent Claim
14 words
The method of claim 12 wherein the mask is removed by a dry etch.
Claim 26
Dependent Claim
15 words
The method of claim 12 wherein the mask is removed by a wet chemical etching.
Claim 27
Dependent Claim
49 words
The method of claim 12, wherein the step of removing the mask further includes, planarizing the top surface of the substrate until said top surface is smooth and comprises the mask and the insulating layer in the opening in the mask, and then removing the mask from the substrate.
Claim 28
Dependent Claim
28 words
The method of claim 23 wherein said planarizing the top surface of the substrate is performed by applying a rotating polishing pad in the presence of a slurry.
Claim 29
Dependent Claim
43 words
The method of claim 12 wherein the step of removing the mask further includes, removing the insulating layer from the sidewalls of the mask without removing all the insulating layer from the opening in the mask, and removing the mask from the substrate.
Claim 30
Dependent Claim
18 words
The method of claim 25 wherein the insulating layer is removed from the sidewalls by a dry etch.
Claim 31
Dependent Claim
19 words
The method of claim 25 wherein the insulating layer is removed from the sidewalls by a wet chemical etch.
Claim 32
Dependent Claim
17 words
The method of claim 12, further comprising the step of: depositing an electrical conductor into the via.
Claim 33
Dependent Claim
52 words
The method of claim 28, further comprising the step of: planarizing the top surface of the substrate so that the electrical conductor remains only in the via and is otherwise removed from the top surface of the substrate, thereby forming an electrically conductive vertical via in the insulating layer of the substrate.
Claim 34
Dependent Claim
25 words
The method of claim 29 wherein the planarization of the substrate is performed by applying a rotating polishing pad in the presence of a slurry.
Claim 35
Dependent Claim
21 words
The method of claim 13 wherein the exposed portion of the first insulating layer is removed by a wet chemical etch.
Claim 36
Dependent Claim
21 words
The method of claim 14 wherein the exposed portion of the second insulating layer is removed by a wet chemical etch.
Claim 37
Dependent Claim
17 words
The method of claim 32 wherein the wet chemical etch does not remove the first insulating layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-14 | 1996-12-14 | 1997-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-14 | 2000-12-14 | 2001-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-14 | 2004-12-14 | 2005-06-15 | $7700.00 | Window Closed / Lapsed |