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US5792702A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for forming a film over a spin-on-glass layer by means of plasma-enhanced chemical-vapor deposition

Assignee: Winbond Electronics Corp
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Filing: 1996-12-19
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Granted: 1998-08-11
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Expires: 2016-12-19
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Abstract

Abstract A method for forming an oxide film over a spin-on-glass (SOG) layer by a plasma-enhanced chemical-vapor deposition (PECVD) is disclosed. The SOG layer is pre-processed in a forming gas of hydrogen and nitrogen in a PECVD chamber. Then the oxide film is formed over the SOG layer by means of the PECVD process in the PECVD chamber.

Inventors

  • 👤 Jack Liang

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 09:18
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6529; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P95/00; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/69215

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 70 words
A method for forming a film over a semiconductor substrate, comprising the steps of: forming a spin-on-glass layer over said semiconductor substrate; pre-processing said spin-on-glass layer in a forming gas which includes hydrogen and nitrogen, only so long as is necessary to substantially eliminate impurities on the surface of said spin-on-glass layer; and forming an oxide film over said spin-on-glass layer by means of a plasma-enhanced chemical-vapor deposition (PECVD) process.
Claim 2
Independent Claim 70 words
A method for forming a film over a semiconductor substrate, comprising the steps of: forming a spin-on-glass layer over said semiconductor substrate; pre-processing said spin-on-glass layer in a forming gas which includes hydrogen and nitrogen, only so long as is necessary to substantially eliminate impurities on the surface of said spin-on-glass layer; and forming an oxide film over said spin-on-glass layer by means of a plasma-enhanced chemical-vapor deposition (PECVD) process.
Claim 3
Dependent Claim 40 words
The method as claimed in claim 1, wherein said oxide layer is formed by means of said plasma-enhanced chemical-vapor deposition (PECVD) process in a PECVD chamber and said spin-on-glass layer is pre-processed by the forming gas in said PECVD chamber.
Claim 4
Dependent Claim 21 words
The method as claimed in claim 1, wherein the ratio of hydrogen to nitrogen in said forming gas is about 2-10%.
Claim 5
Dependent Claim 28 words
The method as claimed in claim 1 further comprising the step of forming an oxide layer over said semiconductor substrate before the formation of said spin-on-glass layer process.
Claim 6
Dependent Claim 31 words
The method as claimed in claim 4 further comprising the step of forming a first metal layer over said semiconductor substrate, said first metal layer covered by said spin-on-glass layer process.
Claim 7
Dependent Claim 24 words
The method as claimed in claim 5 further comprising the step of forming a contact window through said oxide layer and said spin-on-glass layer.
Claim 8
Dependent Claim 31 words
The method as claimed in claim 6 further comprising the step of forming a second metal layer over said oxide layer for contacting said first metal layer through said contact window.
Claim 9
Dependent Claim 16 words
The method as claimed in claim 1 further comprising the step of etching said spin-on-glass layer.
Claim 10
Dependent Claim 19 words
The method as claimed in claim 1, wherein said pre-processing step is performed for approximately five to fifteen seconds.
Claim 11
Dependent Claim 15 words
The method as claimed in claim 1, wherein said impurities comprise organic content or moisture.

References Cited (Backward Citations)

US5270267A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-08-10 2002-02-09 2002-08-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-08-10 2006-02-09 2006-08-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-08-10 2010-02-09 2010-08-11 $7700.00 Window Closed / Lapsed

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