Method of manufacturing non-volatile semiconductor memory device storing charge in gate insulating layer therein

Claim 1

A method of manufacturing a MONOS-type non-volatile semiconductor memory comprising the steps of: first forming a gate insulating layer on a semiconductor substrate by forming a first silicon oxide layer on the surface of the substrate, forming a silicon nitride layer on the first silicon oxide layer and forming a second silicon oxide layer on the silicon nitride layer, wherein the second silicon oxide layer is formed by thermal oxidation of an outer surface of the silicon nitride layer, thereafter, forming a gate electrode layer on the gate insulating layer, which gate electrode layer is formed into a gate electrode in a later step, thereafter, introducing an impurity into a channel region of the semiconductor substrate disposed under the gate insulating layer and under a gate region after forming the gate insulating layer and the gate electrode layer, and pattering the gate electrode layer into a gate electrode.

Claim 2

A method of manufacturing a MONOS-type non-volatile semiconductor memory comprising the steps of: first forming a gate insulating layer on a semiconductor substrate by forming a first silicon oxide layer on the surface of the substrate, forming a silicon nitride layer on the first silicon oxide layer and forming a second silicon oxide layer on the silicon nitride layer, wherein the second silicon oxide layer is formed by thermal oxidation of an outer surface of the silicon nitride layer, thereafter, forming a gate electrode layer on the gate insulating layer, which gate electrode layer is formed into a gate electrode in a later step, thereafter, introducing an impurity into a channel region of the semiconductor substrate disposed under the gate insulating layer and under a gate region after forming the gate insulating layer and the gate electrode layer, and pattering the gate electrode layer into a gate electrode.