Patent US6368919B2 successfully refreshed from Google Patents.
US6368919B2
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Method and composite for decreasing charge leakage
Assignee: Micron Technology Inc
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Filing: 1999-01-19
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Granted: 2002-04-09
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Expires: 2019-01-19
Abstract
Abstract A dielectric insulating composite for insulating a floating gate from a control gate in a non-volatile memory is described. A material, such as an undoped polysilicon, amorphous silicon, or amorphous polysilicon or a silicon rich nitride, is inserted in the gate structure. The oxide film that results from the oxidation of these films is relatively free from impurities. As a result, charge leakage between the floating gate and control gate is reduced.
Inventors
- 👤 Michael Nuttall
- 👤 Garry A. Mercaldi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:00
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D30/00; H10D30/60; H10D30/68; H10D30/6891; H10D64/01; H10D64/031; H10D64/035; Y; Y10; Y10S; Y10S438/00; Y10S438/954
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
95 words
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising: forming a layer of undoped polysilicon on the floating gate; forming a layer of silicon dioxide by partially oxidizing the layer of undoped polysilicon; depositing a layer of silicon nitride on the layer of silicon dioxide; depositing a layer of silicon rich nitride on the layer of silicon nitride; and forming a second layer of silicon dioxide by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
Claim 2
Dependent Claim
95 words
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising: forming a layer of undoped polysilicon on the floating gate; forming a layer of silicon dioxide by partially oxidizing the layer of undoped polysilicon; depositing a layer of silicon nitride on the layer of silicon dioxide; depositing a layer of silicon rich nitride on the layer of silicon nitride; and forming a second layer of silicon dioxide by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
Claim 3
Dependent Claim
23 words
The process of claim 1 , wherein depositing a layer of silicon rich nitride results in a thin layer of silicon rich nitride.
Claim 4
Dependent Claim
42 words
The process of claim 1 , wherein after depositing a layer of silicon nitride formed on the layer of silicon dioxide by flowing dichlorosilane and ammonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammonia.
Claim 5
Dependent Claim
15 words
The process of claim 3 , wherein, the flow of ammonia is reduced to zero.
Claim 6
Dependent Claim
42 words
The process of claim 1 , wherein after depositing a layer of silicon nitride formed on the layer of silicon dioxide by flowing tetrachlorosilane and ammonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammona.
Claim 7
Dependent Claim
15 words
The process of claim 5 , wherein the flow of ammonia is reduced to zero.
Claim 8
Dependent Claim
99 words
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising: forming a layer of undoped polysilicon on the floating gate; forming a layer of silicon dioxide by partially oxidizing the layer of undoped polysilicon; depositing a layer of silicon nitride on the layer of silicon dioxide; depositing a layer of silicon rich nitride by chemical vapor deposition on the layer of silicon nitride; and forming a second layer of silicon dioxide by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
Claim 9
Dependent Claim
99 words
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising: forming a layer of undoped polysilicon on the floating gate; forming a layer of silicon dioxide by partially oxidizing the layer of undoped polysilicon; depositing a layer of silicon nitride on the layer of silicon dioxide; depositing a layer of silicon rich nitride by chemical vapor deposition on the layer of silicon nitride; and forming a second layer of silicon dioxide by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
Claim 10
Dependent Claim
42 words
The process of claim 7 , wherein after depositing a layer of silicon nitride formed on the layer of silicon dioxide by flowing dichlorosilane and ammonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammonia.
Claim 11
Dependent Claim
42 words
The process of claim 7 , herein after depositing a layer of silicon nitride formed on the layer of silicon dioxide by flowing tetrachlorosilane and ammnonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammonia.
Claim 12
Dependent Claim
95 words
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising: forming a layer of amorphous silicon on the floating gate; forming a layer of silicon dioxide by partially oxidizing the layer of amorphous silicon; depositing a layer of silicon nitride on the layer of silicon dioxide; depositing a layer of silicon rich nitride on the layer of silicon nitride; and forming a second layer of silicon dioxide by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
Claim 13
Dependent Claim
95 words
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising: forming a layer of amorphous silicon on the floating gate; forming a layer of silicon dioxide by partially oxidizing the layer of amorphous silicon; depositing a layer of silicon nitride on the layer of silicon dioxide; depositing a layer of silicon rich nitride on the layer of silicon nitride; and forming a second layer of silicon dioxide by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
Claim 14
Dependent Claim
42 words
The process of claim 10 , wherein after depositing a layer of silicon nitride formed on the layer of silicon dioxide by flowing dichlorosilane and ammonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammonia.
Claim 15
Dependent Claim
42 words
The process of claim 10 , herein after depositing a layer of silicon nitride formed on the layer of silicon dioxide by flowing tetrachlorosilane and ammonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammonia.
Claim 16
Dependent Claim
101 words
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising: forming a layer of undoped polysilicon on the floating gate; forming a layer of silicon dioxide by partially oxidizing the layer of undoped polysilicon; depositing a layer of silicon nitride on the layer of silicon dioxide; depositing a layer of silicon rich nitride on the layer of silicon nitride; and forming a second layer of silicon dioxide that is relatively free of nitrogen by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
Claim 17
Dependent Claim
101 words
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising: forming a layer of undoped polysilicon on the floating gate; forming a layer of silicon dioxide by partially oxidizing the layer of undoped polysilicon; depositing a layer of silicon nitride on the layer of silicon dioxide; depositing a layer of silicon rich nitride on the layer of silicon nitride; and forming a second layer of silicon dioxide that is relatively free of nitrogen by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
Claim 18
Dependent Claim
42 words
The process of claim 13 , wherein after depositing a layer of silicon nitride formed on the layer of silicon dioxide by flowing dichlorosilane and ammonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammonia.
Claim 19
Dependent Claim
42 words
The process of claim 13 , herein after depositing a layer of silicon nitride formed on the layer of silicon dioxide by flowing tetrachlorosilane and ammonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammonia.
Claim 20
Dependent Claim
100 words
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising: forming a layer of undoped polysilicon on the floating gate; forming a layer of silicon dioxide by partially oxidizing the layer of undoped polysilicon; depositing a layer of silicon nitride on the layer of silicon dioxide; depositing a layer of silicon rich nitride on the layer of silicon nitride; and forming a second layer of silicon dioxide that is relatively free of nitrogen from the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
Claim 21
Dependent Claim
100 words
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising: forming a layer of undoped polysilicon on the floating gate; forming a layer of silicon dioxide by partially oxidizing the layer of undoped polysilicon; depositing a layer of silicon nitride on the layer of silicon dioxide; depositing a layer of silicon rich nitride on the layer of silicon nitride; and forming a second layer of silicon dioxide that is relatively free of nitrogen from the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
Claim 22
Dependent Claim
42 words
The process of claim 16 , wherein after depositing a layer of silicon nitride formed on the layer of silicon dioxide by flowing dichlorosilane and ammonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammonia.
Claim 23
Dependent Claim
42 words
The process of claim 16 , herein after depositing a layer of silicon nitride formed on the layer of silicon dioxide by flowing tetrachlorosilane and ammonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammonia.
Claim 24
Dependent Claim
99 words
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising: forming a layer of amorphous polysilicon on the floating gate; forming a layer of silicon dioxide by partially oxidizing the layer of amorphous polysilicon; depositing a layer of silicon nitride on the layer of silicon dioxide; depositing a layer of silicon rich nitride by chemical vapor deposition on the layer of silicon nitride; and forming a second layer of silicon dioxide by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
Claim 25
Dependent Claim
99 words
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising: forming a layer of amorphous polysilicon on the floating gate; forming a layer of silicon dioxide by partially oxidizing the layer of amorphous polysilicon; depositing a layer of silicon nitride on the layer of silicon dioxide; depositing a layer of silicon rich nitride by chemical vapor deposition on the layer of silicon nitride; and forming a second layer of silicon dioxide by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
Claim 26
Dependent Claim
42 words
The process of claim 19 , wherein after depositing a layer of silicon nitride formed on the layer of silicon dioxide by flowing dichlorosilane and ammonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammonia.
Claim 27
Dependent Claim
42 words
The process of claim 19 , herein after depositing a layer of silicon nitride formed on the layer of silicon dioxide by flowing tetrachlorosilane and ammonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammonia.
Claim 28
Dependent Claim
105 words
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising: forming a layer of undoped polysilicon on the floating gate; forming a layer of silicon dioxide by partially oxidizing the layer of undoped polysilicon; depositing a layer of silicon nitride on the layer of silicon dioxide; depositing a layer of silicon rich nitride by chemical vapor deposition on the layer of silicon nitride; and forming a second layer of silicon dioxide that is relatively free of nitrogen by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
Claim 29
Dependent Claim
105 words
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising: forming a layer of undoped polysilicon on the floating gate; forming a layer of silicon dioxide by partially oxidizing the layer of undoped polysilicon; depositing a layer of silicon nitride on the layer of silicon dioxide; depositing a layer of silicon rich nitride by chemical vapor deposition on the layer of silicon nitride; and forming a second layer of silicon dioxide that is relatively free of nitrogen by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
Claim 30
Dependent Claim
42 words
The process of claim 22 , wherein after depositing a layer of silicon nitride formed on the layer of silicon dioxide by flowing dichlorosilane and ammonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammonia.
Claim 31
Dependent Claim
42 words
The process of claim 22 , herein after depositing a layer of silicon nitride formed on the layer of silicon dioxide by flowing tetrachlorosilane and ammonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammonia.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-04-08 | 2005-10-08 | 2006-04-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-04-08 | 2009-10-08 | 2010-04-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-04-08 | 2013-10-08 | 2014-04-09 | $7700.00 | Window Closed / Lapsed |