Method of producing an HSG structure using an amorphous silicon disorder layer as a substrate

Abstract

Abstract A method is provided for forming a hemispherical grain silicon structure on an integrated circuit semiconductor substrate in a processing reactor. The method includes the steps of forming a doped silicon layer upon the semiconductor substrate and forming an amorphous silicon layer upon the doped silicon layer. A hemispherical grain silicon layer is formed upon the amorphous silicon layer. The doped silicon layer is formed at a first deposition temperature and the amorphous silicon layer is formed at a second deposition temperature wherein the second deposition temperature is lower than the first deposition temperature. The first deposition temperature is, for example, in excess of approximately 590° C. and is preferably approximately 625° C. The second deposition temperature is less than approximately 560° C. and is preferably approximately 555° C. The various layers are deposited without removing the semiconductor substrate from the processing reactor. The depositions can be performed as a continuous deposition of silicon at varying temperatures. The doped polysilicon layer can be formed of doped polysilicon material or doped amorphous silicon and the amorphous silicon layer can be formed of an undoped material.

Inventors

• 👤 Michael Nuttall

Bibliographic Details