Abstract A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si 3 N 4 outwardly of the substrate, the outer Si 3 N 4 layer having an outer surface; c) covering the outer Si 3 N 4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si 3 N 4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si 3 N 4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present. Further, a method in accordance with the invention includes, i) providing an outer layer of Si 3 N 4 outwardly of the substrate, the outer Si 3 N 4 layer having an outer surface; ii) transforming the outer Si 3 N 4 surface into a material effective to promote adhesion of photoresist to the Si 3 N 4 layer; and iii) depositing a layer of photoresist over the transformed outer Si 3 N 4 surface, the photoresist adhering to the Si 3 N 4 layer with a greater degree of adhesion than would otherwise occur if the outer Si 3 N 4 surface were not transformed.
A semiconductor processing method comprising: providing a substrate; providing an outer layer of Si 3 N 4 outwardly of the substrate, the outer Si 3 N 4 layer having an outer surface; transforming the outer Si 3 N 4 surface into a material effective to promote adhesion of photoresist to the Si 3 N 4 layer, the material predominately comprising silicon enriched Si 3 N 4 ; and forming a layer of photoresist in physical contact with the transformed outer surface.
Claim 2
Dependent Claim
81 words
A semiconductor processing method comprising: providing a substrate; providing an outer layer of Si 3 N 4 outwardly of the substrate, the outer Si 3 N 4 layer having an outer surface; transforming the outer Si 3 N 4 surface into a material effective to promote adhesion of photoresist to the Si 3 N 4 layer, the material predominately comprising silicon enriched Si 3 N 4 ; and forming a layer of photoresist in physical contact with the transformed outer surface.
Claim 3
Dependent Claim
93 words
A semiconductor processing method comprising: providing a substrate; placing the substrate within a chemical vapor deposition reactor; feeding a gaseous silicon containing precursor and a gaseous nitrogen containing precursor to the reactor under conditions effective to deposit a Si 3 N 4 layer on the substrate; reducing the gas flow of the nitrogen containing precursor to the reactor to enrich an outermost surface of the deposited Si 3 N 4 layer with silicon atoms; and depositing a layer of photoresist in physical contact with the silicon enriched outer Si 3 N 1 surface.
Claim 4
Dependent Claim
93 words
A semiconductor processing method comprising: providing a substrate; placing the substrate within a chemical vapor deposition reactor; feeding a gaseous silicon containing precursor and a gaseous nitrogen containing precursor to the reactor under conditions effective to deposit a Si 3 N 4 layer on the substrate; reducing the gas flow of the nitrogen containing precursor to the reactor to enrich an outermost surface of the deposited Si 3 N 4 layer with silicon atoms; and depositing a layer of photoresist in physical contact with the silicon enriched outer Si 3 N 1 surface.
Claim 5
Dependent Claim
21 words
The semiconductor processing method of claim 2 wherein the silicon containing precursor comprises dichlorosilane and the nitrogen containing precursor comprises ammonia.