Patent FR807836A successfully refreshed from Google Patents.
US5489542A
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Method for fabricating semiconductor device in which threshold voltage shift and charge-pumping current are improved
Assignee: Toshiba Corp
•
Filing: 1993-07-16
•
Granted: 1996-02-06
•
Expires: 2013-07-16
Abstract
Abstract A method for fabricating a semiconductor device on a silicon substrate, consists of producing a silicon oxide film on the silicon substrate producing a thin silicon nitride film on the silicon oxide film, thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas, producing a conductive film on the silicon nitride film nitrided in the atmosphere of the nitrogenous gas, producing a gate region from the silicon oxide film, the silicon nitride film, and the conductive film, a channel region being positioned under the gate region in the silicon substrate, producing a source region in the silicon substrate adjacent to one side of the channel region, producing a drain region in the silicon substrate adjacent to another side of the channel region, and producing wiring regions on the source region, the drain region, and the gate region.
Inventors
- 👤 Hiroshi Iwai
- 👤 Toyota Morimoto
- 👤 Hisayo S. Momose
- 👤 Kikuo Yamabe
- 👤 Yoshio Ozawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:57
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0181; H10D84/02; H10D84/03; H10D84/038; H10D64/01346
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
185 words
A method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate; b) forming a silicon nitride film on the silicon oxide film; c) thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas; d) forming a conductive film on the silicon nitride film nitrided in the atmosphere of the nitrogenous gas; e) forming a gate region from the silicon oxide film formed in the step a), the silicon nitride film nitrided in the step c), and the conductive film formed in the step d), a channel region being positioned under the gate region in the silicon substrate; f) forming a source region in the silicon substrate adjacent to one side of the channel region; g), forming a drain region in the silicon substrate adjacent to another side of the channel region; and h), forming wiring regions on the source region, the drain region, and the gate region, the semiconductor device being fabricated by the gate region, the channel region, the source region, the drain region, and the wiring regions.
Claim 2
Independent Claim
185 words
A method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate; b) forming a silicon nitride film on the silicon oxide film; c) thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas; d) forming a conductive film on the silicon nitride film nitrided in the atmosphere of the nitrogenous gas; e) forming a gate region from the silicon oxide film formed in the step a), the silicon nitride film nitrided in the step c), and the conductive film formed in the step d), a channel region being positioned under the gate region in the silicon substrate; f) forming a source region in the silicon substrate adjacent to one side of the channel region; g), forming a drain region in the silicon substrate adjacent to another side of the channel region; and h), forming wiring regions on the source region, the drain region, and the gate region, the semiconductor device being fabricated by the gate region, the channel region, the source region, the drain region, and the wiring regions.
Claim 3
Dependent Claim
26 words
Said method according to claim 1 in which the silicon nitride film formed in step b) is nitrided by a rapid thermal nitridation in step c).
Claim 4
Dependent Claim
25 words
Said method according to claim 1 in which the silicon nitride film in step b) is formed by a liquid phase chemical vapor deposition method.
Claim 5
Dependent Claim
21 words
Said method according to claim 1 in which the silicon nitride film in step b) is formed by a sputter method.
Claim 6
Dependent Claim
19 words
Said method according to claim 1 in which the nitrogenous gas in step c) is ammonia (NH 3 ).
Claim 7
Dependent Claim
18 words
Said method according to claim 1 in which the nitrogenous gas in step c) is NF 3 .
Claim 8
Dependent Claim
18 words
Said method according to claim 1 in which the nitrogenous gas in step c) is N 2 O.
Claim 9
Dependent Claim
26 words
Said method according to claim 1 in which the silicon nitride film is nitrided at an temperature of 1100° C. for one minute in step c).
Claim 10
Dependent Claim
22 words
Said method according to claim 1 in which the conductive film formed in step d) is a P + polycrystalline silicon film.
Claim 11
Dependent Claim
27 words
Said method according to claim 1 in which the thickness of the silicon nitride film formed in step b) is equal to or less than 3 nm.
Claim 12
Dependent Claim
34 words
Said method according to claim 1 in which the conductive film formed in step d) is formed as a multi-layer gate electrode consisting of both a P + polycrystalline silicon film and a metal.
Claim 13
Dependent Claim
35 words
Said method according to claim 1 in which the conductive film formed in step d) is formed as a multi-layer gate electrode consisting of both a P + polycrystalline silicon film and a metal silicide.
Claim 14
Dependent Claim
20 words
Said method according to claim 1 in which the wiring regions formed in step h) are formed as a multi-layer.
Claim 15
Dependent Claim
193 words
Said method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate; b) forming a silicon nitride film on the silicon oxide film; c) thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas; d) oxidizing the silicon nitride film nitrided in the step c); e) forming a conductive film on the silicon nitride film oxidized in the step d); f) forming a gate region from the silicon oxide film formed in the step a), the silicon nitride film oxidized in the step d), and the conductive film formed in the step e), a channel region being positioned under the gate region in the silicon substrate; g), forming a source region in the silicon substrate adjacent to one side of the channel region; h) forming a drain region in the silicon substrate adjacent to another side of the channel region; and i) forming wiring regions on the source region, the drain region, and the gate region, the semiconductor device being fabricated by the gate region, the channel region, the source region, the drain region, and the wiring regions.
Claim 16
Dependent Claim
193 words
Said method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate; b) forming a silicon nitride film on the silicon oxide film; c) thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas; d) oxidizing the silicon nitride film nitrided in the step c); e) forming a conductive film on the silicon nitride film oxidized in the step d); f) forming a gate region from the silicon oxide film formed in the step a), the silicon nitride film oxidized in the step d), and the conductive film formed in the step e), a channel region being positioned under the gate region in the silicon substrate; g), forming a source region in the silicon substrate adjacent to one side of the channel region; h) forming a drain region in the silicon substrate adjacent to another side of the channel region; and i) forming wiring regions on the source region, the drain region, and the gate region, the semiconductor device being fabricated by the gate region, the channel region, the source region, the drain region, and the wiring regions.
Claim 17
Dependent Claim
26 words
Said method according to claim 14 in which the silicon nitride film formed in step b) is nitrided by a rapid thermal nitridation in step c).
Claim 18
Independent Claim
183 words
A method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate; b) forming a silicon nitride film on the silicon oxide film; c) annealing the silicon nitride film in an atmosphere of argon gas; d) forming a conductive film on the silicon nitride film annealed in the atmosphere of argon gas; e) forming a gate region from the silicon oxide film formed in the step a), the silicon nitride film annealed in the step c), and the conductive film formed in the step d), a channel region being positioned under the gate region in the silicon substrate; f) forming a source region in the silicon substrate adjacent to one side of the channel region; g) forming a drain region in the silicon substrate adjacent to another side of the channel region; and h) forming wiring regions on the source region, the drain region, and the gate region, the semiconductor device being fabricated by the gate region, the channel region, the source region, the drain region, and the wiring regions.
Claim 19
Independent Claim
183 words
A method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate; b) forming a silicon nitride film on the silicon oxide film; c) annealing the silicon nitride film in an atmosphere of argon gas; d) forming a conductive film on the silicon nitride film annealed in the atmosphere of argon gas; e) forming a gate region from the silicon oxide film formed in the step a), the silicon nitride film annealed in the step c), and the conductive film formed in the step d), a channel region being positioned under the gate region in the silicon substrate; f) forming a source region in the silicon substrate adjacent to one side of the channel region; g) forming a drain region in the silicon substrate adjacent to another side of the channel region; and h) forming wiring regions on the source region, the drain region, and the gate region, the semiconductor device being fabricated by the gate region, the channel region, the source region, the drain region, and the wiring regions.
Claim 20
Dependent Claim
27 words
Said method according to claim 16 in which the silicon nitride film formed in step b) is annealed by a rapid thermal annealing in the step c).
Claim 21
Independent Claim
188 words
A method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate; b) forming a silicon nitride film on the silicon oxide film; c) annealing the silicon nitride film in an atmosphere of argon gas; d) oxidizing the annealed silicon nitride film; e) forming a conductive film on the silicon nitride film oxidized in the step d); f) forming a gate region from the silicon oxide film formed in the step a), the silicon nitride film oxidized in the step d), and the conductive film formed in the step e), a channel region being positioned under the gate region in the silicon substrate; g) forming a source region in the silicon substrate adjacent to one side of the channel region; h) forming a drain region in the silicon substrate adjacent to another side of the channel region; and i) forming wiring regions on the source region, the drain region, and the gate region, the semiconductor device being fabricated by the gate region, the channel region, the source region, the drain region, and the wiring regions.
Claim 22
Independent Claim
188 words
A method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate; b) forming a silicon nitride film on the silicon oxide film; c) annealing the silicon nitride film in an atmosphere of argon gas; d) oxidizing the annealed silicon nitride film; e) forming a conductive film on the silicon nitride film oxidized in the step d); f) forming a gate region from the silicon oxide film formed in the step a), the silicon nitride film oxidized in the step d), and the conductive film formed in the step e), a channel region being positioned under the gate region in the silicon substrate; g) forming a source region in the silicon substrate adjacent to one side of the channel region; h) forming a drain region in the silicon substrate adjacent to another side of the channel region; and i) forming wiring regions on the source region, the drain region, and the gate region, the semiconductor device being fabricated by the gate region, the channel region, the source region, the drain region, and the wiring regions.
Claim 23
Dependent Claim
26 words
Said method according to claim 18 in which the silicon nitride film formed in step d) is annealed by a rapid thermal annealing in step c).
Claim 24
Independent Claim
121 words
A method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate; b) forming a silicon nitride film on the silicon oxide film; c) thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas; d) forming a conductive film on the silicon nitride film nitrided in the atmosphere of the nitrogenous gas; and e) forming a gate region from both the silicon oxide film formed in the step a) and the silicon nitride film nitrided in the step c), a channel region being positioned under the gate region in the silicon substrate and the semiconductor device being fabricated by the gate region and the channel region.
Claim 25
Independent Claim
121 words
A method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate; b) forming a silicon nitride film on the silicon oxide film; c) thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas; d) forming a conductive film on the silicon nitride film nitrided in the atmosphere of the nitrogenous gas; and e) forming a gate region from both the silicon oxide film formed in the step a) and the silicon nitride film nitrided in the step c), a channel region being positioned under the gate region in the silicon substrate and the semiconductor device being fabricated by the gate region and the channel region.
Claim 26
Dependent Claim
17 words
Said method according to claim 20 in which the semiconductor device is applied to a MOS transistor.
Claim 27
Dependent Claim
17 words
Said method according to claim 20 in which the semiconductor device is applied to a CMOS transistor.
Claim 28
Dependent Claim
16 words
Said method according to claim 20 in which the semiconductor device is applied to an EPROM.
Claim 29
Dependent Claim
16 words
Said method according to claim 20 in which the semiconductor device is applied to an EEPROM.
Claim 30
Dependent Claim
17 words
Said method according to claim 20 in which the semiconductor device is applied to a MOS capacitor.
Claim 31
Independent Claim
197 words
A method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate; b) thermally nitriding the silicon oxide film in an atmosphere of nitrogenous gas by a rapid thermal nitridation method to form an interface region in which the nitrogen concentration is between 0.2 atomic % and 1.0 atomic %, the interface region being positioned between the silicon oxide film and the silicon substrate; c) forming a conductive film on the silicon oxide film; d) forming a gate region from both the silicon oxide film nitrided in the step b) and the conductive film formed in the step c), a channel region being formed under the gate region in the silicon substrate; e) forming a source region in the silicon substrate adjacent to one side of the channel region; f) forming a drain region in the silicon substrate adjacent to another side of the channel region; and g) forming wiring regions on the source region, the drain region, and the gate region, the semiconductor device being fabricated by the gate region, the channel region, the source region, the drain region, and the wiring regions.
Claim 32
Independent Claim
197 words
A method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate; b) thermally nitriding the silicon oxide film in an atmosphere of nitrogenous gas by a rapid thermal nitridation method to form an interface region in which the nitrogen concentration is between 0.2 atomic % and 1.0 atomic %, the interface region being positioned between the silicon oxide film and the silicon substrate; c) forming a conductive film on the silicon oxide film; d) forming a gate region from both the silicon oxide film nitrided in the step b) and the conductive film formed in the step c), a channel region being formed under the gate region in the silicon substrate; e) forming a source region in the silicon substrate adjacent to one side of the channel region; f) forming a drain region in the silicon substrate adjacent to another side of the channel region; and g) forming wiring regions on the source region, the drain region, and the gate region, the semiconductor device being fabricated by the gate region, the channel region, the source region, the drain region, and the wiring regions.
Claim 33
Dependent Claim
31 words
Said method according to claim 26 in which the silicon oxide film nitrided in step b) is exposed to the nitrogeous gas at temperatures equal to or less than 900° C.
Claim 34
Dependent Claim
19 words
Said method according to claim 26 in which the nitrogenous gas in step b) is ammonia (NH 3 ).
Claim 35
Dependent Claim
18 words
Said method according to claim 26 in which the nitrogenous gas in step b) is NF 3 .
Claim 36
Dependent Claim
18 words
Said method according to claim 26 in which the nitrogenous gas in step b) is N 2 O.
Claim 37
Dependent Claim
18 words
Said method according to claim 26 in which the nitrogenous gas in step b) is N 2 .
Claim 38
Independent Claim
213 words
A method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate; b) thermally nitriding the silicon oxide film in an atmosphere of nitrogenous gas by a rapid thermal nitridation method and re-oxidizing the silicon oxide film in an atmosphere of oxygen gas so as to form an interface region in which the nitrogen concentration is between 0.2 atomic % and 1.0 atomic %, the interface region being positioned between the silicon oxide film and the silicon substrate; c) forming a conductive film on the silicon oxide film; d) forming a gate region from both the silicon oxide film nitrided and re-oxidized in the step b) and the conductive film formed in the step c), a channel region being formed under the gate region in the silicon substrate; e) forming a source region in the silicon substrate adjacent to one side of the channel region; f) forming a drain region in the silicon substrate adjacent to another side of the channel region; and g) forming wiring regions on the source region, the drain region, and the gate region, the semiconductor device being fabricated by the gate region, the channel region, the source region, the drain region, and the wiring regions.
Claim 39
Independent Claim
213 words
A method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate; b) thermally nitriding the silicon oxide film in an atmosphere of nitrogenous gas by a rapid thermal nitridation method and re-oxidizing the silicon oxide film in an atmosphere of oxygen gas so as to form an interface region in which the nitrogen concentration is between 0.2 atomic % and 1.0 atomic %, the interface region being positioned between the silicon oxide film and the silicon substrate; c) forming a conductive film on the silicon oxide film; d) forming a gate region from both the silicon oxide film nitrided and re-oxidized in the step b) and the conductive film formed in the step c), a channel region being formed under the gate region in the silicon substrate; e) forming a source region in the silicon substrate adjacent to one side of the channel region; f) forming a drain region in the silicon substrate adjacent to another side of the channel region; and g) forming wiring regions on the source region, the drain region, and the gate region, the semiconductor device being fabricated by the gate region, the channel region, the source region, the drain region, and the wiring regions.
Claim 40
Independent Claim
200 words
A method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate by a liquid phase deposition method; b) densifying the silicon oxide film by vaporizing water included in the silicon oxide film; c) thermally nitriding the silicon oxide film densified in the step b); d) re-oxidizing the surface of the nitrided silicon oxide film in an atmosphere of dry oxygen at temperatures around 1100° C.; e) forming a conductive film on the re-oxidized silicon nitride film; f) forming a gate region from both the silicon oxide film formed in the step a) and the conductive film formed in the step c), a channel region being positioned under the gate region in the silicon substrate; g) forming a source region in the silicon substrate adjacent to one side of the channel region; h) forming a drain region in the silicon substrate adjacent to another side of the channel region; and i) forming wiring regions on the source region, the drain region, and the gate region, the semiconductor device being fabricated by the gate region, the channel region, the source region, the drain region, and the wiring regions.
Claim 41
Independent Claim
200 words
A method for fabricating a semiconductor device on a silicon substrate, comprising the steps of: a) forming a silicon oxide film on the silicon substrate by a liquid phase deposition method; b) densifying the silicon oxide film by vaporizing water included in the silicon oxide film; c) thermally nitriding the silicon oxide film densified in the step b); d) re-oxidizing the surface of the nitrided silicon oxide film in an atmosphere of dry oxygen at temperatures around 1100° C.; e) forming a conductive film on the re-oxidized silicon nitride film; f) forming a gate region from both the silicon oxide film formed in the step a) and the conductive film formed in the step c), a channel region being positioned under the gate region in the silicon substrate; g) forming a source region in the silicon substrate adjacent to one side of the channel region; h) forming a drain region in the silicon substrate adjacent to another side of the channel region; and i) forming wiring regions on the source region, the drain region, and the gate region, the semiconductor device being fabricated by the gate region, the channel region, the source region, the drain region, and the wiring regions.
Claim 42
Dependent Claim
26 words
Said method according to claim 33 in which the silicon oxide film densified in step b) is nitrided by a rapid thermal nitridation in step b).
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