Semiconductor chip or device having a connecting member formed on a surface protective film

Claim 2

A semiconductor chip joined to a surface of a solid, comprising: a surface protective film formed on a surface of the semiconductor chip that is opposite to the surface of the solid; a connecting member formed on the surface protective film for supporting the semiconductor chip on the surface of the solid and electrically connecting the semiconductor chip and the solid to each other; and surface wiring, formed on the surface protective film and exposed to the outside of the semiconductor chip, for connecting internal wiring formed under the surface protective film and the connecting member to each other.

Claim 3

The semiconductor chip according to claim 1 , further comprising a pad opening which is formed in the surface protective film for exposing a part of the internal wiring which is covered with the surface protective film, the surface wiring connecting the internal wiring and the connecting member to each other through the pad opening.

Claim 4

The semiconductor chip according to claim 2 , wherein the connecting member is formed by stacking a seed film on a surface of the surface protective film having the pad opening formed therein and selectively plating the seed film, and the surface wiring is formed by patterning the seed film.

Claim 5

The semiconductor chip according to claim 2 , wherein the surface wiring includes a first connecting portion connected to the internal wiring through the pad opening, a second connecting portion connected to the connecting member, and an intermediate portion formed on the surface of the surface protective film and connected to the first connecting portion and the second connecting portion.

Claim 6

A semiconductor device of a chip-on-chip type constructed by opposing a surface of a first semiconductor chip to a surface of a second semiconductor chip to join the first and second semiconductor chips to each other, comprising: a surface protective film formed on the surface, opposite to the second semiconductor chip, of the first semiconductor chip, a connecting member formed between the surface protective film and the second semiconductor chip for electrically connecting the first and second semiconductor chips, and surface wiring, formed on the surface protective film and exposed to the outside of the semiconductor chip, for connecting internal wiring formed under the surface protective film and the connecting member to each other.

Claim 7

A semiconductor device of a chip-on-chip type constructed by opposing a surface of a first semiconductor chip to a surface of a second semiconductor chip to join the first and second semiconductor chips to each other, comprising: a surface protective film formed on the surface, opposite to the second semiconductor chip, of the first semiconductor chip, a connecting member formed between the surface protective film and the second semiconductor chip for electrically connecting the first and second semiconductor chips, and surface wiring, formed on the surface protective film and exposed to the outside of the semiconductor chip, for connecting internal wiring formed under the surface protective film and the connecting member to each other.

Claim 8

The semiconductor device according to claim 5 , wherein a pad opening for exposing a part of the internal wiring which is covered with the surface protective film is formed in the surface protective film, and the surface wiring connects the internal wiring and the connecting member to each other through the pad opening.

Claim 9

The semiconductor device according to claim 6 , wherein the surface wiring includes a first connecting portion connected to the internal wiring through the pad opening, a second connecting portion connected to the connecting member, and an intermediate portion formed on a surface of the surface protective film and connected to the first connecting portion and the second connecting portion.

Claim 10

A semiconductor chip according to claim 1 , which further comprises an insulating film formed on an opposite side of said internal wiring relative to said surface protective film, and also between a semiconductor substrate and said surface protective film.

Claim 11

A semiconductor device according to claim 5 , which further comprises an insulating film formed on an opposite side of said internal wiring relative to said surface protective film, and also between a semiconductor substrate and said surface protective film.

Claim 12

A semiconductor chip according to claim 8 , wherein said insulating film includes an opening through which said internal wiring contacts said semiconductor substrate.

Claim 13

A semiconductor device according to claim 9 , wherein said insulating film includes an opening through which said internal wiring contacts said semiconductor substrate.