Patent US6326231B1 successfully refreshed from Google Patents.
US6326231B1
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Use of silicon oxynitride ARC for metal layers
Assignee: Lone Star Silicon Innovations LLC
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Filing: 1998-12-08
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Granted: 2001-12-04
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Expires: 2018-12-08
Abstract
Abstract In one embodiment, the present invention relates to a method of forming a silicon oxynitride antireflection coating over a metal layer, involving the steps of providing a semiconductor substrate comprising the metal layer over at least part of the semiconductor substrate; depositing a silicon oxynitride layer over the metal layer having a thickness from about 100 Å to about 150 Å; and forming an oxide layer having a thickness from about 5 Å to about 50 Å over the silicon oxynitride layer to provide the silicon oxynitride antireflection coating. In another embodiment, the present invention relates to a method of reducing an apparent reflectivity of a metal layer having a first reflectivity in a semiconductor structure, involing forming a silicon oxynitride antireflection coating over the metal layer; wherein the silicon oxynitride antireflection coating formed over the metal layer has a second reflectivity and is formed by depositing silicon oxynitride on the metal layer by chemical vapor deposition and forming an oxide layer over the oxynitride, and the difference between the first reflectivity and the second reflectivity is at least about 60%.
Inventors
- 👤 Ramkumar Subramanian
- 👤 Bhanwar Singh
- 👤 Sanjay K. Yedur
- 👤 Marina V. Plat
- 👤 Christopher F. Lyons
- 👤 Bharath Rangarajan
- 👤 Michael K. Templeton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:10
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/71; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
95 words
A method of forming a silicon oxynitride antireflection coating over a metal layer, comprising: providing a semiconductor substrate comprising the metal layer over at least part of the semiconductor substrate; depositing a silicon oxynitride layer on the metal layer having a thickness from about 100 Å to about 1500 Å; and forming an oxide layer having a thickness from about 5 Å to about 50 Å over the silicon oxynitride layer to provide the silicon oxynitride antireflection coating, wherein the oxide layer forms a barrier to migration of nitrogen atoms from the silicon oxynitride layer.
Claim 2
Independent Claim
95 words
A method of forming a silicon oxynitride antireflection coating over a metal layer, comprising: providing a semiconductor substrate comprising the metal layer over at least part of the semiconductor substrate; depositing a silicon oxynitride layer on the metal layer having a thickness from about 100 Å to about 1500 Å; and forming an oxide layer having a thickness from about 5 Å to about 50 Å over the silicon oxynitride layer to provide the silicon oxynitride antireflection coating, wherein the oxide layer forms a barrier to migration of nitrogen atoms from the silicon oxynitride layer.
Claim 3
Dependent Claim
55 words
The method of claim 1 , wherein the metal layer comprises at least one of aluminum, copper, gold, nickel, palladium, platinum, silver, tantalum, titanium, tungsten, zinc, aluminum-copper alloys, aluminum alloys, copper alloys, titanium alloys, tungsten alloys, titanium-tungsten alloys, gold alloys, nickel alloys, palladium alloys, platinum alloys, silver alloys, tantalum alloys, zinc alloys, and metal silicides.
Claim 4
Dependent Claim
24 words
The method of claim 1 , wherein the metal layer comprises at least one of aluminum, copper, aluminum-copper alloys, aluminum alloys and copper alloys.
Claim 5
Dependent Claim
21 words
The method of claim 1 , wherein the oxide layer is formed by contacting the silicon oxynitride layer with oxygen plasma.
Claim 6
Dependent Claim
23 words
The method of claim 1 , wherein the oxide layer is formed by contacting the silicon oxynitride layer with N 2 O plasma.
Claim 7
Dependent Claim
32 words
The method of claim 1 , wherein the oxide layer is formed by chemical vapor deposition techniques using SiH 4 and at least one of N 2 O and O 2 .
Claim 8
Dependent Claim
27 words
The method of claim 1 , wherein the silicon oxynitride antireflection coating has a reflectivity of about 10% or less at a wavelength below about 248 nm.
Claim 9
Independent Claim
113 words
A method of reducing an apparent reflectivity of a metal layer having a first reflectivity in a semiconductor structure, comprising forming a silicon oxynitride antireflection coating on the metal layer; wherein the silicon oxynitride antireflection coating formed over the metal layer has a second reflectivity and is formed by depositing silicon oxynitride on the metal layer by chemical vapor deposition and forming an oxide layer having a thickness from about 5 Å to about 50 Å over the silicon oxynitride, and the difference between the first reflectivity and the second reflectivity is at least about 60%, wherein the oxide layer forms a barrier to migration of nitrogen atoms from the silicon oxynitride layer.
Claim 10
Independent Claim
113 words
A method of reducing an apparent reflectivity of a metal layer having a first reflectivity in a semiconductor structure, comprising forming a silicon oxynitride antireflection coating on the metal layer; wherein the silicon oxynitride antireflection coating formed over the metal layer has a second reflectivity and is formed by depositing silicon oxynitride on the metal layer by chemical vapor deposition and forming an oxide layer having a thickness from about 5 Å to about 50 Å over the silicon oxynitride, and the difference between the first reflectivity and the second reflectivity is at least about 60%, wherein the oxide layer forms a barrier to migration of nitrogen atoms from the silicon oxynitride layer.
Claim 11
Dependent Claim
55 words
The method of claim 8 , wherein the metal layer comprises at least one of aluminum, copper, gold, nickel, palladium, platinum, silver, tantalum, titanium, tungsten, zinc, aluminum-copper alloys, aluminum alloys, copper alloys, titanium alloys, tungsten alloys, titanium-tungsten alloys, gold alloys, nickel alloys, palladium alloys, platinum alloys, silver alloys, tantalum alloys, zinc alloys, and metal silicides.
Claim 12
Dependent Claim
14 words
The method of claim 8 , wherein second reflectivity is about 5% or less.
Claim 13
Dependent Claim
26 words
The method of claim 8 , wherein the difference between the first reflectivity and the second reflectivity is determined at a wavelength below about 425 nm.
Claim 14
Dependent Claim
26 words
The method of claim 8 , wherein the difference between the first reflectivity and the second reflectivity is determined at a wavelength below about 365 nm.
Claim 15
Dependent Claim
23 words
The method of claim 8 , wherein the silicon oxynitride antireflection coating has a thickness from about 125 Å to about 1400 Å.
Claim 16
Dependent Claim
25 words
The method of claim 8 , wherein the chemical vapor deposition is one of plasma enhanced chemical vapor deposition and low pressure chemical vapor deposition.
Claim 17
Independent Claim
121 words
A method of processing a semiconductor substrate, comprising: providing a semiconductor substrate comprising a metal layer having a reflectivity of at least 80%; forming a silicon oxynitride antireflection coating on the metal layer having a thickness from about 100 Å to about 1500 Å, the silicon oxynitride antireflection coating comprising an oxide layer having a thickness from about 5 Å to about 50 Å over a silicon oxynitride layer; depositing a deep ultraviolet photoresist over the silicon oxynitride antireflection coating; selectively irradiating the deep ultraviolet photoresist with electromagnetic radiation having a wavelength of about 248 nm or less; and developing the deep ultraviolet photoresist, wherein the oxide layer forms a barrier to migration of nitrogen atoms from the silicon oxynitride layer.
Claim 18
Independent Claim
121 words
A method of processing a semiconductor substrate, comprising: providing a semiconductor substrate comprising a metal layer having a reflectivity of at least 80%; forming a silicon oxynitride antireflection coating on the metal layer having a thickness from about 100 Å to about 1500 Å, the silicon oxynitride antireflection coating comprising an oxide layer having a thickness from about 5 Å to about 50 Å over a silicon oxynitride layer; depositing a deep ultraviolet photoresist over the silicon oxynitride antireflection coating; selectively irradiating the deep ultraviolet photoresist with electromagnetic radiation having a wavelength of about 248 nm or less; and developing the deep ultraviolet photoresist, wherein the oxide layer forms a barrier to migration of nitrogen atoms from the silicon oxynitride layer.
Claim 19
Dependent Claim
55 words
The method of claim 15 , wherein the metal layer comprises at least one of aluminum, copper, gold, nickel, palladium, platinum, silver, tantalum, titanium, tungsten, zinc, aluminum-copper alloys, aluminum alloys, copper alloys, titanium alloys, tungsten alloys, titanium-tungsten alloys, gold alloys, nickel alloys, palladium alloys, platinum alloys, silver alloys, tantalum alloys, zinc alloys, and metal silicides.
Claim 20
Dependent Claim
43 words
The method of claim 15 , wherein the silicon oxynitride ARC is formed by depositing a silicon oxynitride layer by chemical vapor deposition and contacting the silicon oxynitride layer with at least one of a oxygen plasma and a N 2 O plasma.
Claim 21
Dependent Claim
27 words
The method of claim 17 , wherein the silicon oxynitride layer is deposited using one of plasma enhanced chemical vapor deposition and low pressure chemical vapor deposition.
Claim 22
Dependent Claim
31 words
The method of claim 15 , wherein the electromagnetic radiation has a wavelength of at least one of about 365 nm, about 248 nm, about 193 nm and about 157 nm.
Claim 23
Dependent Claim
23 words
The method of claim 15 , wherein the deep ultraviolet photoresist is developed to yield fine patterns on the order of 0.25 μm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-12-03 | 2005-06-04 | 2005-12-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-03 | 2009-06-04 | 2009-12-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-03 | 2013-06-04 | 2013-12-04 | $7700.00 | Window Closed / Lapsed |