Process for forming a semiconductor device with an antireflective layer

Claim 2

A process for forming a semiconductor device comprising the steps of: forming a first layer over a semiconductor substrate, wherein the first layer is conductive; forming an antireflective layer over the first layer, wherein: the antireflective layer includes a first location, a second location, and a third location lying between the first and second locations, wherein the third location has a higher absorption coefficient compared to each of the first and second locations; the first location includes a first element and nitrogen; the second location includes a second element and nitrogen; the antireflective layer has a first nitrogen content at a first portion that includes the first location and a second nitrogen content at a second portion that includes the second location; and the second nitrogen content is higher than the first nitrogen content; patterning the first layer and the antireflective layer to form a first member including a remaining portion of the first layer, wherein the remaining portion of the first layer is at least part of a gate electrode, a contact structure, or an interconnect; and forming a conductive member near the remaining portion of the first layer, wherein: the conductive member abuts the antireflective layer; and the conductive member is spaced apart from the remaining portion of the first layer.

Claim 3

The process of claim 1, wherein at least one of the first and second locations is nonstoichiometric.

Claim 4

The process of claim 1, wherein the first and second elements are selected from a group consisting of silicon, germanium, boron, phosphorus, aluminum, molybdenum, tantalum, titanium, and tungsten.

Claim 5

The process of claim 1, wherein: the first location includes silicon-rich silicon nitride; and the second location includes a material selected from a group consisting of stoichiometric silicon nitride and nitrogen-rich silicon nitride.

Claim 6

The process of claim 1, wherein: the first layer includes a metal-containing layer; and the first and second elements are selected from a group consisting of aluminum, molybdenum, tantalum, titanium, and tungsten.

Claim 7

The process of claim 1, further comprising a step of forming a second layer over and adjacent to the second location of the antireflective layer, wherein: the first layer has a first refractive index; the second layer has a second refractive index that is different from the first refractive index; the first location has a third refractive index that is closer to the first refractive index compared to the second refractive index; and the second location has a fourth refractive index that is closer to the second refractive index compared to the first refractive index.

Claim 8

The process of claim 1, further comprising a step of forming a second layer over and adjacent to the second location of the antireflective layer, wherein: the first layer has a first refractive index; the second layer has a second refractive index; and the third location has a third refractive index that is higher than each of the first and second refractive indices.

Claim 9

The process of claim 1, wherein the antireflective layer is formed by a deposition selected from a group consisting of: low pressure chemical vapor deposition at a temperature of at least 600 degrees Celsius; plasma-enhanced chemical vapor deposition at a temperature no higher than 480 degrees Celsius; and sputter deposition.

Claim 10

The process of claim 1, further comprising a step of forming a passivation layer over the remaining portion of the first layer and the conductive member.

Claim 11

The process of claim 1, wherein the step of patterning is performed using a fluorine-containing gas.

Claim 12

The process of claim 1, wherein the first layer includes a material selected from a group consisting of silicon, aluminum, and copper.

Claim 13

The process of claim 1, further comprising a step of forming conductive members on at least portions of the antireflective layer.

Claim 14

The process of claim 1, wherein the antireflective layer has a thickness no greater than approximately 500 angstroms.

Claim 15

A process for forming a semiconductor device comprising the steps of: forming a first layer over a semiconductor substrate, wherein the first layer is conductive; forming an antireflective layer over the first layer, wherein: the antireflective layer includes a first location and a second location; the first location includes nitrogen and has a first parameter type with a first value; the second location includes nitrogen and has the first parameter type with a second value; the first parameter type is selected from a group consisting of refractive index and absorption coefficient; and the first value is greater than the second value; patterning the first layer and the antireflective layer to form a first member including a remaining portion of the first layer, wherein the remaining portion of the first layer is at least part of a gate electrode, a contact structure, or an interconnect; forming a second layer over and adjacent to the second location of the antireflective layer, wherein: the first layer has a third value of the first parameter type; the second layer has a fourth value of the first parameter type that is different from the third value; the first value is closer to the third value compared to the fourth value; and the second value is closer to the fourth value compared to the third value; and forming a conductive member near the remaining portion of the first layer, wherein: the conductive member abuts the antireflective layer; and the conductive member is spaced apart from the remaining portion of the first layer.

Claim 16

A process for forming a semiconductor device comprising the steps of: forming a first layer over a semiconductor substrate, wherein the first layer is conductive; forming an antireflective layer over the first layer, wherein: the antireflective layer includes a first location and a second location; the first location includes nitrogen and has a first parameter type with a first value; the second location includes nitrogen and has the first parameter type with a second value; the first parameter type is selected from a group consisting of refractive index and absorption coefficient; and the first value is greater than the second value; patterning the first layer and the antireflective layer to form a first member including a remaining portion of the first layer, wherein the remaining portion of the first layer is at least part of a gate electrode, a contact structure, or an interconnect; forming a second layer over and adjacent to the second location of the antireflective layer, wherein: the first layer has a third value of the first parameter type; the second layer has a fourth value of the first parameter type that is different from the third value; the first value is closer to the third value compared to the fourth value; and the second value is closer to the fourth value compared to the third value; and forming a conductive member near the remaining portion of the first layer, wherein: the conductive member abuts the antireflective layer; and the conductive member is spaced apart from the remaining portion of the first layer.

Claim 17

The process of claim 14, wherein: the step of forming the antireflective layer is performed such that the antireflective layer includes a third location overlying the second location; the third location has a fifth value of the first parameter type; and the second value is higher than each of the first, third, fourth, and fifth values.

Claim 18

The process of claim 14, wherein the step of forming the antireflective layer is performed such that the antireflective layer includes a third location overlying the second location, wherein: the third location has a fifth value of the first parameter type; and the second value is higher than each of the first and fifth values.

Claim 19

The process of claim 14, wherein the step of forming the antireflective layer is performed such that the antireflective layer includes a third location overlying the second location, wherein; the first location has a first value of a second parameter type; the second location has a second value of the second parameter type; the third location has a third value of the second parameter type; the second parameter type is different from the first parameter type; the second parameter type is selected from a group consisting of refractive index and absorption coefficient; and the second value of the second parameter type is higher than each of the first and third values of the second parameter type.

Claim 20

The process of claim 14, wherein the step of forming the antireflective layer is performed such that: the first location further includes a first element that is different from nitrogen; the second location further includes a second element that is different from nitrogen; and the first and second locations have different compositions.

Claim 21

The process of claim 18 wherein the first and second elements are selected from a group consisting of silicon, germanium, boron, phosphorus, aluminum, molybdenum, tantalum, titanium, and tungsten.

Claim 22

The process of claim 18, wherein the step of forming the antireflective layer is performed such that at least one of the first and second locations is nonstoichiometric.

Claim 23

The process of claim 18, wherein: the first location includes silicon-rich silicon nitride; and the second location includes a material selected from a group consisting of stoichiometric silicon nitride and nitrogen-rich silicon nitride.

Claim 24

The process of claim 21, wherein: the first layer includes a metal-containing layer; and the first and second elements are selected from a group consisting of aluminum, molybdenum, tantalum, titanium, and tungsten.

Claim 25

The process of claim 14, further comprising a step of forming a passivation layer over the remaining portion of the first layer and the conductive member.

Claim 26

The process of claim 14, wherein the step of patterning is performed using a fluorine-containing gas.

Claim 27

The process of claim 14, wherein the first layer includes a material selected from a group consisting of silicon, aluminum, and copper.

Claim 28

The process of claim 14, wherein the antireflective layer is formed by a deposition selected from a group consisting of: low pressure chemical vapor deposition at a temperature of at least 600 degrees Celsius; plasma-enhanced chemical vapor deposition at a temperature no higher than 480 degrees Celsius; and sputter deposition.

Claim 29

The process of claim 14, further comprising a step of forming conductive members on at least portions of the antireflective layer.

Claim 30

The process of claim 14, wherein the antireflective layer has a thickness no greater than approximately 500 angstroms.

Claim 31

A process for forming a semiconductor device comprising the steps of: forming a metal-containing layer over a semiconductor substrate; and forming an antireflective layer over the metal-containing layer, wherein: the antireflective layer includes a first location and a second location; the first location includes a first element and nitrogen; the second location includes a second element and nitrogen; the first and second elements are selected from a group consisting of aluminum, molybdenum, tantalum, titanium, and tungsten; and the first and second locations have different compositions.

Claim 32

A process for forming a semiconductor device comprising the steps of: forming a metal-containing layer over a semiconductor substrate; and forming an antireflective layer over the metal-containing layer, wherein: the antireflective layer includes a first location and a second location; the first location includes a first element and nitrogen; the second location includes a second element and nitrogen; the first and second elements are selected from a group consisting of aluminum, molybdenum, tantalum, titanium, and tungsten; and the first and second locations have different compositions.

Claim 33

A process for forming a semiconductor device comprising the steps of: forming a first layer over a semiconductor substrate, wherein the first layer has a first absorption coefficient and a first refractive index; forming an antireflective layer over the first layer, wherein: the antireflective layer includes a first location and a second location that overlies the first location; the first location has a second absorption coefficient and a second refractive index, wherein the second absorption coefficient is different from the first absorption coefficient, and the second refractive index is different from the first refractive index; and the second location has a third absorption coefficient and a third refractive index; and forming a second layer over the antireflective layer, wherein the second layer has a fourth absorption coefficient and a fourth refractive index, and wherein, the fourth absorption coefficient is different from the third absorption coefficient, and the fourth refractive index is different from the third refractive index, wherein the semiconductor device has a characteristic selected from a group consisting of: (a) the second refractive index is closer to the first refractive index compared to the fourth refractive index; and the third refractive index is closer to the fourth refractive index compared to the first refractive index; and (b) the second absorption coefficient is closer to the first absorption coefficient compared to the fourth absorption coefficient; and the third absorption coefficient is closer to the fourth absorption coefficient compared to the first absorption coefficient.

Claim 34

A process for forming a semiconductor device comprising the steps of: forming a first layer over a semiconductor substrate, wherein the first layer has a first absorption coefficient and a first refractive index; forming an antireflective layer over the first layer, wherein: the antireflective layer includes a first location and a second location that overlies the first location; the first location has a second absorption coefficient and a second refractive index, wherein the second absorption coefficient is different from the first absorption coefficient, and the second refractive index is different from the first refractive index; and the second location has a third absorption coefficient and a third refractive index; and forming a second layer over the antireflective layer, wherein the second layer has a fourth absorption coefficient and a fourth refractive index, and wherein, the fourth absorption coefficient is different from the third absorption coefficient, and the fourth refractive index is different from the third refractive index, wherein the semiconductor device has a characteristic selected from a group consisting of: (a) the second refractive index is closer to the first refractive index compared to the fourth refractive index; and the third refractive index is closer to the fourth refractive index compared to the first refractive index; and (b) the second absorption coefficient is closer to the first absorption coefficient compared to the fourth absorption coefficient; and the third absorption coefficient is closer to the fourth absorption coefficient compared to the first absorption coefficient.

Claim 35

The process of claim 30, wherein: the step of forming the antireflective layer is performed such that the antireflective layer includes a third location lying between the first and second locations; the third location has a value of a parameter type selected from a group consisting of refractive index and absorption coefficient; and the value of the parameter type for the third location is higher than each of the first, second, third and fourth refractive indices or the first, second, third, and fourth absorption coefficient, as appropriate.

Claim 36

The process of claim 30, wherein: the step of forming the antireflective layer is performed such that the antireflective layer includes a third location overlying the second location; the value at the third location, wherein the value has a parameter type selected from a group consisting of refractive index and absorption coefficient; and the value of the parameter type for the third location is lower than the second refractive index or second absorption coefficient, as appropriate.

Claim 37

The process of claim 30, wherein the step of forming the antireflective layer is performed such that: the first location further includes a first element that is different from nitrogen; the second location further includes a second element that is different from nitrogen; and the first and second locations have different compositions.

Claim 38

The process of claim 33, wherein the first and second elements are selected from a group consisting of silicon, germanium, boron, phosphorus, aluminum, molybdenum, tantalum, titanium, and tungsten.

Claim 39

The process of claim 33, wherein the step of forming the antireflective layer is performed such that at least one of the first and second locations is nonstoichiometric.

Claim 40

The process of claim 33, wherein: the first location includes silicon-rich silicon nitride; and the second location includes a material selected from a group consisting of stoichiometric silicon nitride and nitrogen-rich silicon nitride.

Claim 41

The process of claim 33, wherein: the first layer includes a metal-containing layer; and the first and second elements are selected from a group consisting of aluminum, molybdenum, tantalum, titanium, and tungsten.

Claim 42

The process of claim 30, wherein the antireflective layer is formed by a deposition selected from a group consisting of: low pressure chemical vapor deposition at a temperature of at least 600 degrees Celsius; plasma-enhanced chemical vapor deposition at a temperature no higher than 480 degrees Celsius; and sputter deposition.

Claim 43

The process of claim 30, further comprising a step of forming a passivation layer over the second layer.

Claim 44

The process of claim 30, wherein the first layer includes a material selected from a group consisting of silicon, aluminum, and copper.

Claim 45

The process of claim 30, further comprising a step of forming conductive members on the antireflective layer.

Claim 46

The process of claim 30, wherein the antireflective layer has a thickness no greater than approximately 500 angstroms.