Patent US6287946B1 successfully refreshed from Google Patents.
US6287946B1
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Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers
Assignee: HRL Laboratories LLC
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Filing: 1999-05-05
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Granted: 2001-09-11
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Expires: 2019-05-05
Abstract
Abstract A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound. The method includes the step of increasing the amount of the group V element (P) in the semiconductor compound so that the semiconductor compound is non-stoichiometric having an excess concentration of the group V element in an amount of at least 0.1% above stoichiometric levels.
Inventors
- 👤 Miroslav Micovic
- 👤 Daniel P. Docter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:14
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; B; B82; B82Y; B82Y15/00; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10D64/60; H10D64/62; H10D62/852
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
69 words
A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound, the method including the step of increasing an amount of the group V element in the InP semiconductor compound so that the InP semiconductor compound is non-stoichiometric having an excess concentration of the group V element in an amount of at least 0.1% above stoichiometric levels.
Claim 2
Independent Claim
69 words
A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound, the method including the step of increasing an amount of the group V element in the InP semiconductor compound so that the InP semiconductor compound is non-stoichiometric having an excess concentration of the group V element in an amount of at least 0.1% above stoichiometric levels.
Claim 3
Dependent Claim
35 words
The method of claim 1 , wherein the InP semiconductor compound is InP and wherein the P constituent of the InP compound falls in the range of 0.1 to 11% excess P above stoichiometric levels.
Claim 4
Dependent Claim
29 words
The method of claim 2 , wherein the InP semiconductor compound is crystalline and wherein the InP semiconductor compound contains in the range of 0.6 to 2% excess phosphorous.
Claim 5
Dependent Claim
16 words
The method of claim 3 , wherein the InP semiconductor compound contains approximately 0.6% excess phosphorous.
Claim 6
Dependent Claim
17 words
The method of claim 1 , wherein the InP semiconductor compound is substantially free of a dopant.
Claim 7
Dependent Claim
38 words
The method of claim 1 , wherein the metal contact comprises a layer of Titanium immediately adjacent the InP semiconductor compound, a layer of Platinum on the Titanium layer and a layer of Gold on the Platinum layer.
Claim 8
Dependent Claim
43 words
The method of claim 1 , wherein the metal contact comprises a layer of a Gold Germanium alloy immediately adjacent the InP semiconductor compound, a layer of Nickel on the Gold Germanium alloy layer and a layer of Gold on the Nickel layer.
Claim 9
Dependent Claim
12 words
The method of claim 1 wherein the InP semiconductor compound is InP.
Claim 10
Dependent Claim
21 words
The method of claim 1 wherein the InP semiconductor compound is selected from the group consisting of InGaP, InAlP, and InGaAsP.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-09-10 | 2005-03-12 | 2005-09-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-09-10 | 2009-03-12 | 2009-09-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-09-10 | 2013-03-12 | 2013-09-11 | $7700.00 | Window Closed / Lapsed |