US5646069A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication process for Alx In1-x As/Gay In1-y As power HFET ohmic contacts
Assignee: The AT&T MVPD Group LLC
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Filing: 1995-06-07
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Granted: 1997-07-08
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Expires: 2015-06-07
Abstract
Abstract A metal system that can be adjusted to obtain higher alloying temperatures in AlInAs/GaInAs heterostuctures is disclosed. Increasing the thickness of a Ag layer in the metal system facilitates higher alloying temperatures and, consequently, improved ohmic contact reliability. The system is particularly directed to use in Al x In 1-x As/Ga 0 .47 In 0 .53 As with 0.48<x<1 power HFETs.
Inventors
- 👤 Linda Jelloian
- 👤 Mehran Matloubian
- 👤 Loi D. Nguyen
- 👤 Adele Schmitz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 14:10
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/015; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10D30/4735; H10D30/4738; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10D62/85; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10D64/60; H10D64/62; H10D62/852
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
150 words
A method of forming an ohmic contact through an Al x In 1-x As semiconductor member to a Ga y In 1-y As semiconductor member, wherein y is between 0 and 1, and x is between 0.48 and 1, said method comprising the steps of: depositing, onto said Al x In 1-x As semiconductor member, a metal system that has layers in the sequence of Ni/AuGe/Ag/Au, with said Ni layer adjoining said Al x In 1-x As semiconductor member; and alloying said metal system for a alloy time greater than 5 seconds and at a alloy temperature in the range of 340-450 degrees Centigrade; said Ag layer being deposited with a thickness in the range of 400-1600 Å at which thickness it causes said metal system to form an ohmic contact with said Ga y In 1-y As semiconductor member when allowed at said alloy time and said alloy temperature.
Claim 2
Independent Claim
150 words
A method of forming an ohmic contact through an Al x In 1-x As semiconductor member to a Ga y In 1-y As semiconductor member, wherein y is between 0 and 1, and x is between 0.48 and 1, said method comprising the steps of: depositing, onto said Al x In 1-x As semiconductor member, a metal system that has layers in the sequence of Ni/AuGe/Ag/Au, with said Ni layer adjoining said Al x In 1-x As semiconductor member; and alloying said metal system for a alloy time greater than 5 seconds and at a alloy temperature in the range of 340-450 degrees Centigrade; said Ag layer being deposited with a thickness in the range of 400-1600 Å at which thickness it causes said metal system to form an ohmic contact with said Ga y In 1-y As semiconductor member when allowed at said alloy time and said alloy temperature.
Claim 3
Dependent Claim
27 words
The method of claim 1, wherein said depositing step includes the step of forming said Ni layer with a thickness substantially in the range of 50-150 Å.
Claim 4
Dependent Claim
27 words
The method of claim 1, wherein said depositing step includes the step of forming said AuGe layer with a thickness substantially in the range of 600-1200 Å.
Claim 5
Dependent Claim
26 words
The method of claim 1, said depositing step includes the step of forming said Au layer with a thickness substantially in the range of 500-1500 Å.
Claim 6
Dependent Claim
24 words
The method of claim 1, wherein said selected alloy temperature is approximately 340 degrees Centigrade and said Ag layer thickness is approximately 400 Å.
Claim 7
Dependent Claim
24 words
The method of claim 1, wherein said selected alloy temperature is approximately 360 degrees Centigrade and said Ag layer thickness is approximately 800 Å.
Claim 8
Dependent Claim
24 words
The method of claim 1, wherein said selected alloy temperature is approximately 380 degrees Centigrade and said Ag layer thickness is approximately 1200 Å.
Claim 9
Dependent Claim
24 words
The method of claim 1, wherein said selected ahoy temperature is approximately 400 degrees Centigrade and said Ag layer thickness is approximately 1600 Å.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-07-07 | 2001-01-06 | 2001-07-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-07 | 2005-01-06 | 2005-07-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-07 | 2009-01-06 | 2009-07-08 | $7700.00 | Window Closed / Lapsed |