US5387549A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fabricating ohmic contact
Assignee: Sony Corp
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Filing: 1994-05-13
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Granted: 1995-02-07
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Expires: 2014-05-13
Abstract
Abstract An ohmic electrode and a process for fabricating the same, said process comprising forming a first metallic layer comprising indium or an indium alloy on a compound semiconductor layer, forming a second metallic layer comprising a gold-germanium alloy on said first metallic layer, and subjecting the first and the second metallic layer thus obtained to alloying treatment. The present invention provides favorable ohmic contacts by effecting the alloying treatment at a relatively low temperature of 350° C. or even lower.
Inventors
- 👤 Toshimasa Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:17
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10D64/60; H10D64/62; H10D62/00; H10D62/80; H10D62/85
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
59 words
A process for forming an ohmic electrode, comprising: forming a first metallic layer comprising indium or an indium alloy on a compound semiconductor layer; forming a second metallic layer comprising a gold-germanium alloy on said first metallic layer; and subjecting said first and second metallic layers thus obtained to alloying treatment at a temperature of 350° C. or lower.
Claim 2
Dependent Claim
59 words
A process for forming an ohmic electrode, comprising: forming a first metallic layer comprising indium or an indium alloy on a compound semiconductor layer; forming a second metallic layer comprising a gold-germanium alloy on said first metallic layer; and subjecting said first and second metallic layers thus obtained to alloying treatment at a temperature of 350° C. or lower.
Claim 3
Dependent Claim
82 words
A process for forming an ohmic electrode as claimed in claim 1, which comprises, in addition to the process above, forming a third metallic layer comprising nickel after either forming a first metallic layer comprising indium or an indium alloy on a compound semiconductor layer, or forming a second metallic layer comprising a gold-germanium alloy on said first metallic layer; and subjecting said first, second, and third metallic layers thus obtained to alloying treatment at a temperature of 350° C. or lower.
Claim 4
Dependent Claim
23 words
A process as claimed in claim 1, wherein, said first metallic layer is formed with a thickness of from 2 to 50 nm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
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| 3.5 Years (Year 4) | 1998-02-06 | 1998-08-08 | 1999-02-07 | $2000.00 | Window Closed / Lapsed |
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