Electrode forming method of semiconductor

Abstract

Abstract PURPOSE:To obtain an excellent ohmic contact by a method wherein one of InAs, InSb and InAs1-xSbx (1>x>0) is epitaxially grown and an electrode metal is evaporated thereupon at the time of forming the electrode on III-V group compound semiconductor. CONSTITUTION:A thin film of InAs is grown by a method of chemical vapor phase precipitation using triethyl indium and althin on a surface of semiconductor at the time of an electrode is provided or III-V group compound semiconductor. Or the thin film of InSb is coated using tryethyl indium and tryethyl antimony. Or InAs1-x Sbx is stacked using tryethyl indium and althin, and tryethyl antimony, while making x as 1>x>0. Thereafter the semiconductor is heated at the temperature of 200 deg.C and Au-Ge-Ni group alloy is coated, thus the ohmic electrode is obtained.

Inventors

• 👤 Takashi Fukui
• 👤 Yoshiharu Horikoshi

Bibliographic Details