US4794444A
Expired / Lapsed
US
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Ohmic contact and method for making same
Assignee: Lockheed Martin Corp
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Filing: 1986-04-10
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Granted: 1988-12-27
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Expires: 2006-04-10
Abstract
Abstract An Ohmic contact to a semiconductor body includes a thin semiconductor layer disposed between the body and a conductive layer. The thin layer is not alloyed to the conductive layer and not lattice matched to the body. The layer can have a thickness of less than about 100 nm and a lattice mismatch of at least 0.5 percent. Since the thin layer is not alloyed, a Schottky contact can be formed at the same time as the ohmic contact.
Inventors
- 👤 Shing-gong Liu
- 👤 John P. Paczkowski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:04
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/60; H10D64/62; H10D62/852
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
60 words
An ohmic contact to a semiconductor body comprising: a semiconductor first layer having a thickness of less than about 10 nm and a doping level of at least about 10 18 cm -3 and overlying said body and lattice mismatched with respect to the body; and a conductive second layer overlying said first layer and non-alloyed with said first layer.
Claim 2
Dependent Claim
60 words
An ohmic contact to a semiconductor body comprising: a semiconductor first layer having a thickness of less than about 10 nm and a doping level of at least about 10 18 cm -3 and overlying said body and lattice mismatched with respect to the body; and a conductive second layer overlying said first layer and non-alloyed with said first layer.
Claim 3
Dependent Claim
13 words
The contact of claim 1 wherein said body comprises a compound semiconductor material.
Claim 4
Dependent Claim
14 words
The contact of claim 2 wherein said body comprises a Group III-V semiconductor material.
Claim 5
Dependent Claim
10 words
The contact of claim 3 wherein said body comprises GaAs.
Claim 6
Dependent Claim
9 words
The contact of claim wherein said body comprises AlGaAs.
Claim 7
Dependent Claim
13 words
The contact of claim 1 wherein said first layer comprises a compound semiconductor.
Claim 8
Dependent Claim
15 words
The contact of claim 6 wherein said first layer comprises a Group III-V semiconductor material.
Claim 9
Dependent Claim
25 words
The contact of claim 7 wherein said first layer comprises Ga x In 1-x As, wherein x is greater than 0 and less than 1.
Claim 10
Dependent Claim
7 words
The contact of claim 8 wherein x=0.47.
Claim 11
Dependent Claim
17 words
The contact of claim 1 wherein said first layer is between about 3 and 5 nm thick.
Claim 12
Dependent Claim
10 words
The contact of claim 1 wherein said body is doped.
Claim 13
Dependent Claim
13 words
The contact of claim 1 wherein said mismatch is at least 0.5 percent.
Claim 14
Dependent Claim
13 words
The contact of claim 12 wherein said mismatch is at least 2 percent.
Claim 15
Dependent Claim
15 words
The contact of claim 12 wherein said mismatch is not greater than about 7 percent.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-27 | 1992-06-27 | 1992-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-27 | 1996-06-27 | 1996-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-27 | 2000-06-27 | 2000-12-27 | $7700.00 | Window Closed / Lapsed |