US4583110A
Expired / Lapsed
US
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Intermetallic semiconductor ohmic contact
Assignee: International Business Machines Corp
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Filing: 1984-06-14
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Granted: 1986-04-15
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Expires: 2004-06-14
Abstract
Abstract A 10 -6 ohm cm 2 ohmic contact is provided by formation of a 20-50 Angstroms deep surface region with a net donor density of higher than 5×10 19 /cc. An amphoteric dopant of Si or Ge is incorporated in a pinned Fermi level condition so that an enhanced surface donor concentration occurs.
Inventors
- 👤 Thomas N. Jackson
- 👤 Peter D. Kirchner
- 👤 George D. Pettit
- 👤 Jerry M. P. Woodall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:32
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10D64/60; H10D64/62; Y; Y10; Y10S; Y10S148/00; Y10S148/084; Y10S148/14; Y10S438/00; Y10S438/914; Y10S438/915
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
81 words
An ohmic electrical device connection comprising in combination a first region in a group III-V intermetallic semiconductor crystal having a carrier density in the bulk thereof below 2×10 19 /cc, a barrier region between 20 and 50 Angstroms in thickness positioned in a surface of said first region, said barrier region containing an amphoteric conductivity type determining impurity having a net donor carrier density of above 5×10 19 /cc and a metal in contact with said barrier region in said surface.
Claim 2
Dependent Claim
81 words
An ohmic electrical device connection comprising in combination a first region in a group III-V intermetallic semiconductor crystal having a carrier density in the bulk thereof below 2×10 19 /cc, a barrier region between 20 and 50 Angstroms in thickness positioned in a surface of said first region, said barrier region containing an amphoteric conductivity type determining impurity having a net donor carrier density of above 5×10 19 /cc and a metal in contact with said barrier region in said surface.
Claim 3
Dependent Claim
13 words
The ohmic contact of claim 1 where said intermetallic semiconductor is Gallium Arsenide.
Claim 4
Dependent Claim
21 words
The ohmic contact of claim 2 where said impurity is at least one member of the group of Ge and Si.
Claim 5
Dependent Claim
60 words
An ohmic contact to a group III-V intermetallic semiconductor crystal comprising in combination p1 a surface region containing an amphoteric impurity exhibiting a net donor density above 5×10 19 /cc and a width from the surface to a region of lower net donor density in the range of 20-50 Angstroms, and a metal layer in contact with said surface region.
Claim 6
Dependent Claim
60 words
An ohmic contact to a group III-V intermetallic semiconductor crystal comprising in combination p1 a surface region containing an amphoteric impurity exhibiting a net donor density above 5×10 19 /cc and a width from the surface to a region of lower net donor density in the range of 20-50 Angstroms, and a metal layer in contact with said surface region.
Claim 7
Dependent Claim
46 words
The ohmic contact of claim 8 wherein said crystal is GaAs, said amphoteric dopant is at least one of Si, Ge and said surface region has a net donor density of above 5×10 19 and said surface region is in the range of 20-50 Angstroms thick.
Claim 8
Dependent Claim
100 words
In an ohmic contact to a group III-V intermetallic semiconductor crystal of the type wherein a barrier region at the interface of said crystal and a metal is sufficiently thin to permit quantum mechanical tunneling, the improvement comprising said barrier region having a thickness in the range of 20 to 50 Angstroms and said barrier region containing an amphoteric dopant on both donor and acceptor sites in different sublattices of said crystal exhibiting thereby a net donor density of 5×10 19 and above, said net donor density being higher than the net donor density in the bulk of said crystal.
Claim 9
Dependent Claim
100 words
In an ohmic contact to a group III-V intermetallic semiconductor crystal of the type wherein a barrier region at the interface of said crystal and a metal is sufficiently thin to permit quantum mechanical tunneling, the improvement comprising said barrier region having a thickness in the range of 20 to 50 Angstroms and said barrier region containing an amphoteric dopant on both donor and acceptor sites in different sublattices of said crystal exhibiting thereby a net donor density of 5×10 19 and above, said net donor density being higher than the net donor density in the bulk of said crystal.
Claim 10
Dependent Claim
26 words
The ohmic contact of claim 6 wherein said crystal is GaAs and said dopant is at least one member of the group of Si and Ge.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-14 | 1989-10-14 | 1990-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-14 | 1993-10-14 | 1994-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-14 | 1997-10-14 | 1998-04-15 | $7700.00 | Window Closed / Lapsed |