III-V semiconductor device with OHMIC contact to high resistivity region

Claim 1

A semiconductor device comprising a body of a semiconductor material which consists mainly of at least one element of the column IIIA of the periodic table of elements of which the atomic number is lower than 50 and at least one element of the column VA of the said table of which the atomic number is lower than 52, the said body comprising at least one region of a given conductivity type of which the net number of impurities causing the said given conductivity type is lower than 10 17 atoms per ccm, and at least one ohmic contact to the surface of said one region, said ohmic contact comprising a layer consisting essentially of at least two elements of which the first element is a base metal selected from a first group which consists of: aluminum, tantalum, titanium, and zirconium, and the second element is selected from a second group which consists of zinc, beryllium, magnesium, cadmium, silicon, germanium, tin, sulphur, selenium and tellurium and which causes in the semiconductor region the said given conductivity type, said second element being also incorporated in the region adjacent the surface.