US3767482A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: US Philips Corp
•
Filing: 1971-09-03
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Granted: 1973-10-23
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Expires: 1991-09-03
Abstract
Abstract The invention relates to the provision of low-resistance ohmic contacts on AIIIBV semiconductor bodies. The known alloying contacts provided by means of a doping layer show a poor thermal conductivity, present difficulties in providing current conductors, and can often be used only at low temperatures. According to the invention, the doping layer is removed after alloying and replaced by a contact layer which consists of metals. With such a contact layer, for example, Gunn effect microwave semiconductor devices can by manufactured having a high energy efficiency.
Inventors
- 👤 H Kock
- 👤 Nobel D De
- 👤 P Tijburg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 08:30
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/854; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/051
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
19 words
A method as recited in claim 1, wherein said AIIIBV compound is one of gallium arsenide and gallium phosphide.
Claim 2
Dependent Claim
29 words
A method as recited in claim 1, wherein said doping layer is about 80 percent to about 88 percent by weight gold and the balance consists essentially of germanium.
Claim 3
Dependent Claim
29 words
A method as recited in claim 1, wherein said doping layer is about 40 percent to about 70 percent by weight silver and the balance consists essentially of tin.
Claim 4
Dependent Claim
35 words
A method as recited in claim 1, wherein said cooling is carried out at a low rate and such that during cooling said surface portion has a lower temperature than the adjoining said alloy thereof.
Claim 5
Dependent Claim
22 words
A method as recited in claim 1, wherein said doping layer is removed by dissolving in one of mercury and liquid gallium.
Claim 6
Dependent Claim
19 words
A method as recited in claim 1, wherein said metallic contact consists of at least two different metal layers.
Claim 7
Dependent Claim
47 words
A method as recited in claim 7, wherein a first one of said metal layers contains at least one of the elements chromium, aluminum and titanium and a second one of said metal layers is disposed on said first layer and consists essentially of gold or silver.
Claim 8
Dependent Claim
92 words
A method as recited in claim 1, further comprising the step of providing a second said doping layer on a second part of said surface, heating said surface portion and second doping layer to form a second said alloy region at said surface, cooling said surface portion and said second layer whereby there is deposited on said surface portion semiconductor material further doped with said impurity material, removing the residual portion of said second doping layer, and then providing a metallic contact at at least a portion of said deposited semiconductor material.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-22 | 1977-04-23 | 1977-10-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-22 | 1981-04-23 | 1981-10-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-22 | 1985-04-23 | 1985-10-23 | $7700.00 | Window Closed / Lapsed |