US3070466A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diffusion in semiconductor material
Assignee: International Business Machines Corp
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Filing: 1959-04-30
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Granted: 1962-12-25
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Expires: 1979-04-30
Abstract
No abstract record available.
Inventors
- 👤 Vincent J Lyons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:51
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/151
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
173 words
THE METHOD OF PROVIDING A THREE ZONE ALTERNATE CONDUCTIVELY TYPE SEMICONDUCTOR STRUCTURE COMPRISING THE STEPS OF: PLACING ONE OVER THE OTHER, EACH WITH A PARTICULAR CHEMICAL REDUCING REQUIREMENT, IN CONTACT WITH A GIVEN CONDUCTIVELY TYPE GERMANIUM CRYSTAL, A FIRST COATING OF AN OXIDE OF AN OPPOSITE CONDUCTIVITY TYPE IMPURITY ELEMENT, AND A SECOND COATING OF AN OXIDE OF A CONDUCTIVITY TYPE DETERMINING IMPURITY OF THE SAME TYPE AS SAID CRYSTAL; CHEMIALLY REDUCING SAID FIRST OXIDE BY SATISFYING ITS PARTICULAR REDUCTION REQUIREMENT; HEATING SAID CRYSTAL TO A TEMPERATURE AND FOR A PERIOD OF TIME SUFFICIENT TO DIFFUSE SAID OPPOSITE TYPE IMPURITY ELEMENT INTO SAID CRYSTAL FORMING AN OPPOSITE CONDUCTIVITY TYPE REGION THEREIN; EXPOSING SAID CRYSTAL TO SUFFICIENT HYDROGEN TO COMPLETELY REDUCE SAID SECOND OXIDE COATING AND FURTHER HEATING SAID CRYSTAL AT A TEMPERATURE AND FOR A TIME SUFFICIENT TO PERMIT SAID CONDUCTIVITY TYPE DETERMINING ELEMENT OF THE SAME TYPE AS SAID CRYSTAL OF DIFFUSE INTO SAID CRYSTAL FORMING A CONDUCTIVITY TYPE REGION THE SAME TYPE AS SAID CRYSTAL IN SAID OPPOSITE CONDUCTIVITY TYPE REGION.
Claim 2
Independent Claim
173 words
THE METHOD OF PROVIDING A THREE ZONE ALTERNATE CONDUCTIVELY TYPE SEMICONDUCTOR STRUCTURE COMPRISING THE STEPS OF: PLACING ONE OVER THE OTHER, EACH WITH A PARTICULAR CHEMICAL REDUCING REQUIREMENT, IN CONTACT WITH A GIVEN CONDUCTIVELY TYPE GERMANIUM CRYSTAL, A FIRST COATING OF AN OXIDE OF AN OPPOSITE CONDUCTIVITY TYPE IMPURITY ELEMENT, AND A SECOND COATING OF AN OXIDE OF A CONDUCTIVITY TYPE DETERMINING IMPURITY OF THE SAME TYPE AS SAID CRYSTAL; CHEMIALLY REDUCING SAID FIRST OXIDE BY SATISFYING ITS PARTICULAR REDUCTION REQUIREMENT; HEATING SAID CRYSTAL TO A TEMPERATURE AND FOR A PERIOD OF TIME SUFFICIENT TO DIFFUSE SAID OPPOSITE TYPE IMPURITY ELEMENT INTO SAID CRYSTAL FORMING AN OPPOSITE CONDUCTIVITY TYPE REGION THEREIN; EXPOSING SAID CRYSTAL TO SUFFICIENT HYDROGEN TO COMPLETELY REDUCE SAID SECOND OXIDE COATING AND FURTHER HEATING SAID CRYSTAL AT A TEMPERATURE AND FOR A TIME SUFFICIENT TO PERMIT SAID CONDUCTIVITY TYPE DETERMINING ELEMENT OF THE SAME TYPE AS SAID CRYSTAL OF DIFFUSE INTO SAID CRYSTAL FORMING A CONDUCTIVITY TYPE REGION THE SAME TYPE AS SAID CRYSTAL IN SAID OPPOSITE CONDUCTIVITY TYPE REGION.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-12-24 | 1966-06-25 | 1966-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-12-24 | 1970-06-25 | 1970-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-12-24 | 1974-06-25 | 1974-12-25 | $7700.00 | Window Closed / Lapsed |