US5077599A
Expired / Lapsed
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Electrode structure for iii-v compound semiconductor element and method of manufacturing the same
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1990-06-11
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Granted: 1991-12-31
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Expires: 2010-06-11
Abstract
Abstract The present invention relates to an electrode structure formed on a III-V semiconductor element and a method for manufacturing the same. One object of the invention is to provide an electrode which exibits a high wire bonding strength, a low ohmic contact resistance, and high reliability, while still being easy to process in to desired shapes. The electrode structure is formed by annealing the structure after the formation of a laminated structure having an ohmic layer including at least nickel formed on the III-V compound semiconductor element, a bonding layer to be connected to a bonding wire, a stopper layer provided between the ohmic layer and the bonding layer, and an isolation layer provided between the stopper layer and the ohmic layer.
Inventors
- 👤 Takashi Yano
- 👤 Naoyuki Yamabayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:25
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10D64/60; H10D64/62; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
120 words
An electrode structure formed by annealing a laminated structure formed on a III-V compound semiconductor element, said laminated structure comprising: an ohmic metal layer including at least Ni formed on said semiconductor element; a bonding layer to be connected with a bonding wire; a stopper layer inserted between said ohmic metal layer and said bonding layer for suppressing the diffusion of the constituent elements of the semiconductor element and the constituent element of the ohmic metal layer to an electrode surface; and an isolation layer inserted between said ohmic metal layer and said stopper layer for isolating said stopper layer from said ohmic metal layer, whereby the reaction of the Ni and the stopper layer during the annealing is suppressed.
Claim 2
Dependent Claim
120 words
An electrode structure formed by annealing a laminated structure formed on a III-V compound semiconductor element, said laminated structure comprising: an ohmic metal layer including at least Ni formed on said semiconductor element; a bonding layer to be connected with a bonding wire; a stopper layer inserted between said ohmic metal layer and said bonding layer for suppressing the diffusion of the constituent elements of the semiconductor element and the constituent element of the ohmic metal layer to an electrode surface; and an isolation layer inserted between said ohmic metal layer and said stopper layer for isolating said stopper layer from said ohmic metal layer, whereby the reaction of the Ni and the stopper layer during the annealing is suppressed.
Claim 3
Dependent Claim
21 words
An electrode structure of a III-V compound semiconductor element according to claim 1 wherein said III-V compound semiconductor element is InP.
Claim 4
Dependent Claim
23 words
An electrode structure of a III-V compound semiconductor element according to claim 1 wherein said ohmic metal layer is an AuGeNi alloy layer.
Claim 5
Dependent Claim
21 words
An electrode structure of a III-V compound semiconductor element according to claim 1 wherein said bonding layer is an Au layer.
Claim 6
Dependent Claim
21 words
An electrode structure of a III-V compound semiconductor element according to claim 1 wherein said stopper layer is a Ti layer.
Claim 7
Dependent Claim
21 words
An electrode structure of a III-V compound semiconductor element according to claim 1 wherein said isolation layer is an Au layer.
Claim 8
Dependent Claim
51 words
An electrode structure of a III-V compound semiconductor element according to claim 1 wherein said III-V compound semiconductor element is InP, said ohmic metal layer is an AuGeNi layer, said bonding layer is an Au layer, said stopper layer is a Ti layer and said isolation layer is an Au layer.
Claim 9
Dependent Claim
21 words
An electronic structure of a III-V compound semiconductor element according to claim 1 wherein said III-V compound semiconductor element is GaAs.
Claim 10
Dependent Claim
21 words
An electrode structure of a III-V compound semiconductor element according to claim 1 wherein said stopper layer is an Mo layer.
Claim 11
Dependent Claim
52 words
An electrode structure of a III-V compound semiconductor element according to claim 1 wherein said III-V compound semiconductor element is GaAs, said ohmic metal layer is an AuGeNi alloy layer, said bonding layer is an Au layer, said stopper layer is an Mo layer and said isolation layer is an Au layer.
Claim 12
Dependent Claim
21 words
An electrode structure of a III-V compound semiconductor element according to claim 1 wherein said isolation layer is a Pt layer.
Claim 13
Dependent Claim
52 words
An electrode structure of a III-V compound semiconductor element according to claim 1 wherein said III-V compound semiconductor element is InP, said ohmic metal layer is an AuGeNi alloy layer, said bonding layer is an Au layer, said stopper layer is a Ti layer and said isolation layer is a Pt layer.
Claim 14
Dependent Claim
33 words
An electrode structure of a III-V compound semiconductor element according to claim 1 wherein said ohmic metal layer comprises an AuGe alloy layer and a Ni layer formed on the AuGe alloy layer.
Claim 15
Dependent Claim
55 words
An electrode structure of a III-V compound semiconductor element according to claim 1 wherein said III-V compound semiconductor element is InP, said ohmic metal layer comprises and AuGe alloy and a Ni layer, said bonding layer is an Au layer, said stopper layer is a Ti layer and said isolation layer is a Pt layer.
References Cited (Backward Citations)
JPS5654047A
Cited
JPS5713756A
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JPS5890773A
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JPS605559A
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JPS60242619A
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JPS612360A
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JPS6360526A
Cited
JPS63252471A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-12-30 | 1995-07-01 | 1995-12-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-30 | 1999-07-01 | 1999-12-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-30 | 2003-07-01 | 2003-12-31 | $7700.00 | Window Closed / Lapsed |