Compound semiconductor electrode

Abstract

Abstract PURPOSE:To obtain an electrode with excellent property of bonding and ohmic contact, by providing an electrode constituted of an Au alloy layer, a Ti layer and an Au layer or an Al layer or the alloy layer on a P type compound semiconductor layer. CONSTITUTION:An N type GaP layer 21b and a P type GaP layer 22 are formed on an N type GaP substrate 21a resulting in the formation of a P-N junction 23. The Au-Be alloy layer 24, the Ti layer 25 and the Au layer 26 are formed on the layer 22, then three layers are applied to patterning, and accordingly the ohmic electrode of the layer 22 is obtained. Thus, by constituting an electrode, the Ti layer 25 becomes a stopper layer of Ga, P or Be, and therefore a good ohmic is obtained. Since an alloying is performed, the migration of atoms of Ga, P or Be is prevented during a heat treatment, and accordingly those atoms do not reach the surface of the Au layer 26. Thereby, a bonding can be easily performed.

Inventors

• 👤 Noburo Yasuda
• 👤 安田修朗
• 👤 Akinobu Kasami
• 👤 笠見昭信
• 👤 Yoshiyasu Koike
• 👤 小池吉康

Bibliographic Details