US4738934A
Expired / Lapsed
US
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Method of making indium phosphide devices
Assignee: Nokia Bell Labs
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Filing: 1986-05-16
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Granted: 1988-04-19
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Expires: 2006-05-16
Abstract
Abstract Epitaxial layers of semi-insulating InP grown by MOCVD on conducting InP wafers make excellent substrates for III-V semiconductor devices. Particularly appealing is the low defect density obtained because of the conducting InP wafers and excellent insulating characteristics of the semi-insulating InP layer. The invention is a procedure for doping the insulating layer by ion implantation. Such a procedure is unusually advantageous for fabricating a variety of devices including MISFETs, MESFETs and JFETs.
Inventors
- 👤 Wilbur D. Johnston, Jr.
- 👤 Judith A. Long
- 👤 Albert T. Macrander
- 👤 Bertram Schwartz
- 👤 Shobha Singh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:27
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10P; H10P30/00; H10P30/20; H10P30/21; H10D30/051; H10D30/061; H10P14/00; H10P14/20; H10P14/24; H10P30/202; H10P30/206; H10P30/28; H10P95/00; H10P95/90; H10P95/904
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
58 words
A process for fabricating a device comprising substrate and a first region contacting at least a portion of the surface of the substrate, said substrate comprising n-type or p-type indium phosphide and said first region comprising semi-insulating indium phosphide doped with iron and grown by MOCVD and ion-implanting at least a portion of the first region for carrier-activation.
Claim 2
Dependent Claim
58 words
A process for fabricating a device comprising substrate and a first region contacting at least a portion of the surface of the substrate, said substrate comprising n-type or p-type indium phosphide and said first region comprising semi-insulating indium phosphide doped with iron and grown by MOCVD and ion-implanting at least a portion of the first region for carrier-activation.
Claim 3
Dependent Claim
27 words
The process of claim 1 in which the n-type indium phosphide is doped with sulfur in the concentration range from about 1×10 17 atoms/cm 3 to saturation.
Claim 4
Dependent Claim
28 words
The process of claim 1 in which the p-type indium phosphide is doped with zinc in the concentration range from 1×10 17 to 2×10 18 atoms/cm 3 .
Claim 5
Dependent Claim
21 words
The process of claim 1 in which the concentration of iron is between 10 15 and 10 18 atoms/cm 3 .
Claim 6
Dependent Claim
28 words
The process of claim 1 in which the defect density on the surface of the layer of semi-insulating indium phosphide is less than 5×10 3 defects/cm 2 .
Claim 7
Dependent Claim
15 words
The process of claim 1 in which the ion being implanted is a donor ion.
Claim 8
Dependent Claim
15 words
The process of claim 1 in which the ion being implanted is an acceptor ion.
Claim 9
Dependent Claim
20 words
The process of claim 1 in which the ion energy in the ion implantation is between 10 and 800 kev.
Claim 10
Dependent Claim
22 words
The process of claim 1 in which the anneal is carried out in the temperature range from 600 to 800 degrees C.
Claim 11
Dependent Claim
20 words
The process of claim 1 in which the anneal is carried out in an atmosphere comprising a gas comprising phosphorus.
Claim 12
Dependent Claim
22 words
The process of claim 1 in which the ion implantation takes place in the temperature range between 100 and 300 degrees C.
Claim 13
Dependent Claim
19 words
The process of claim 1 in which the thickness of the first region is between 1/2 and 10 μm.
Claim 14
Dependent Claim
26 words
The process of claim 2 in which the n-type indium phosphide has a sulfur concentration of from about 8×10 18 to 3.5×10 19 atoms/cm 3 .
Claim 15
Dependent Claim
21 words
The process of claim 3 in which the concentration of zinc is from 1×10 18 to 2×10 18 atoms/cm 3 .
Claim 16
Dependent Claim
18 words
The process of claim 4 in which the defect density is less than 10 3 defects/cm 2 .
Claim 17
Dependent Claim
28 words
The process of claim 6 in which the donor ion is at least one ion selected from the group consisting of silicon, germanium, tin, sulfur, selenium and tellurium.
Claim 18
Dependent Claim
28 words
The process of claim 7 in which the acceptor ion is at least one ion selected from the group consisting of zinc, cadmium, mercury, beryllium, magnesium and manganese.
Claim 19
Dependent Claim
16 words
The process of claim 8 in which the ion energy is between 300 and 500 kev.
Claim 20
Dependent Claim
19 words
The process of claim 9 in which the duration of the anneal is between one minute and one hour.
Claim 21
Dependent Claim
16 words
The process of claim 10 in which the atmosphere comprises PH 3 in H 2 .
Claim 22
Dependent Claim
19 words
The process of claim 12 in which the thickness of the first region is between 1 and 4 μm.
Claim 23
Dependent Claim
17 words
The process of claim 15 in which the defect density is less than 100 defects/cm 2 .
Claim 24
Dependent Claim
16 words
The process of claim 18 in which the ion energy is between 340 and 410 kev.
Claim 25
Dependent Claim
15 words
The process of claim 19 in which the duration is between 15 and 20 minutes.
Claim 26
Dependent Claim
19 words
The process of claim 21 in which the thickness of the first region is between 2 and 3 μm.
Claim 27
Dependent Claim
17 words
The process of claim 22 in which the defect density is less than 10 defects/cm 2 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-19 | 1991-10-19 | 1992-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-19 | 1995-10-19 | 1996-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-19 | 1999-10-19 | 2000-04-19 | $7700.00 | Window Closed / Lapsed |