Method and apparatus for forming and growing a single crystal of a semiconductor compound

Claim 1

An apparatus for growing a single crystal of a Group II-VI or III-V semiconductor compound by the gradient zone freeze method including: (a) an autoclave having contained therein: (i) a chamber provided with heating means for containing and volatilizing the volatile component of the compound to be grown: (ii) a growth crucible communicating with the chamber so that an atmosphere of said volatile component is provided in the growth crucible during crystal growth and having a lower seed well region for containing a seed crystal and a transition region and main growth region extending therefrom for containing charge material of the compound; and (iii) support means for supporting said crucible, said support means having a configuration so as to cause reduction of radial heat flow and an enhancement of axial heat flow at least around the seed well and transition regions of said crucible during crystal growth.

Claim 2

An apparatus for growing a single crystal of a Group II-VI or III-V semiconductor compound by the gradient zone freeze method including: (a) an autoclave having contained therein: (i) a chamber provided with heating means for containing and volatilizing the volatile component of the compound to be grown: (ii) a growth crucible communicating with the chamber so that an atmosphere of said volatile component is provided in the growth crucible during crystal growth and having a lower seed well region for containing a seed crystal and a transition region and main growth region extending therefrom for containing charge material of the compound; and (iii) support means for supporting said crucible, said support means having a configuration so as to cause reduction of radial heat flow and an enhancement of axial heat flow at least around the seed well and transition regions of said crucible during crystal growth.

Claim 6

An apparatus for growing a single crystal of a Group II-VI or III-V semiconductor compound by the gradient zone freeze method including: (a) an autoclave having contained therein: (i) a chamber provided with heating means for containing and volatilizing the volatile component of the compound to be grown: (ii) a growth crucible communicating with the chamber so that an atmosphere of said volatile component is provided in the growth crucible during crystal growth and having a lower seed well region for containing a seed crystal, a transition region extending from the seed well, and a main growth region extending from the top of the transition region; and (iii) means associated with the growth crucible for causing an inversion or flattening of the normally occurring meniscus at the liquid-solid interface at least during the initial period of crystal growth.

Claim 7

An apparatus for growing a single crystal of a Group II-VI or III-V semiconductor compound by the gradient zone freeze method including: (a) an autoclave having contained therein: (i) a chamber provided with heating means for containing and volatilizing the volatile component of the compound to be grown: (ii) a growth crucible communicating with the chamber so that an atmosphere of said volatile component is provided in the growth crucible during crystal growth and having a lower seed well region for containing a seed crystal, a transition region extending from the seed well, and a main growth region extending from the top of the transition region; and (iii) means associated with the growth crucible for causing an inversion or flattening of the normally occurring meniscus at the liquid-solid interface at least during the initial period of crystal growth.

Claim 8

An apparatus for growing a single crystal of a semiconductor compound by the gradient zone freeze method including: (a) a growth crucible having a lower seed well region for containing a seed crystal and a transition region and main growth region extending therefrom for containing charge material of the compound; and (b) support means for supporting said crucible, said support means having a configuration so as to cause reduction of radial heat flow and an enhancement of axial heat flow at least around the seed well and transition regions of said crucible during crystal growth, and wherein said seed well is a narrow elongated member positioned in a hole provided therefor in said support means and wherein said support means includes a plurality of vertical slots extending parallel to the axis of the growth crucible, said vertical slots extending from the top surface of said support means to a depth substantially adjacent to the bottom of said seed well.

Claim 9

An apparatus for growing a single crystal of a semiconductor compound by the gradient zone freeze method including: (a) a growth crucible having a lower seed well region for containing a seed crystal and a transition region and main growth region extending therefrom for containing charge material of the compound; and (b) support means for supporting said crucible, said support means having a configuration so as to cause reduction of radial heat flow and an enhancement of axial heat flow at least around the seed well and transition regions of said crucible during crystal growth, and wherein said seed well is a narrow elongated member positioned in a hole provided therefor in said support means and wherein said support means includes a plurality of vertical slots extending parallel to the axis of the growth crucible, said vertical slots extending from the top surface of said support means to a depth substantially adjacent to the bottom of said seed well.

Claim 10

An apparatus for growing a single crystal of a semiconductor compound by the gradient zone freeze method including: (a) a growth crucible having a lower seed well region for containing a seed crystal, a transition region extending from the seed well, and a main growth region extending from the top of the transition region; and (b) means associated with the growth crucible for causing an inversion or flattening of the normally occurring meniscus at the liquid-solid interface at least during the initial period of crystal growth comprising a support member which supports said crucible at said transition region and which is provided with a plurality of concentric axially extending slots extending downwardly from its supporting surface.

Claim 11

An apparatus for growing a single crystal of a semiconductor compound by the gradient zone freeze method including: (a) a growth crucible having a lower seed well region for containing a seed crystal, a transition region extending from the seed well, and a main growth region extending from the top of the transition region; and (b) means associated with the growth crucible for causing an inversion or flattening of the normally occurring meniscus at the liquid-solid interface at least during the initial period of crystal growth comprising a support member which supports said crucible at said transition region and which is provided with a plurality of concentric axially extending slots extending downwardly from its supporting surface.