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Patent US6274889B1 successfully refreshed from Google Patents.
US6274889B1
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Method for forming ohmic electrode, and semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1999-09-21
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Granted: 2001-08-14
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Expires: 2019-09-21
Abstract
Abstract A semiconductor device having a single substrate made of silicon carbide; an epitaxial film made of AlxInyGa(1-x-y)N which is selectively formed on the single substrate; an amplifier section including a gate formed on the single substrate and a source layer and a drain layer which are formed within the single substrate; and another amplifier section formed on the epitaxial film.
Inventors
- 👤 Yorito Ota
- 👤 Hiroyuki Masato
- 👤 Yasuhito Kumabuchi
- 👤 Makoto Kitabatake
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:31
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/01; H10D8/051; H10D12/00; H10D12/01; H10D12/031; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0115; H10D64/012; H10D64/0121; H10D64/0123; H10D84/00; H10D84/01; H10D84/02; H10D84/08; H10P; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
69 words
A semiconductor device comprising: a single substrate made of silicon carbide; an epitaxial film made of Al x In y Ga (1−x−y) N (where 0≦x≦1 and 0≦y≦1) and selectively formed on the single substrate; an amplifier section comprising a gate formed on the single substrate and a source layer and a drain layer which are formed within the single substrate; and another amplifier section formed on the epitaxial film.
Claim 2
Dependent Claim
69 words
A semiconductor device comprising: a single substrate made of silicon carbide; an epitaxial film made of Al x In y Ga (1−x−y) N (where 0≦x≦1 and 0≦y≦1) and selectively formed on the single substrate; an amplifier section comprising a gate formed on the single substrate and a source layer and a drain layer which are formed within the single substrate; and another amplifier section formed on the epitaxial film.
Claim 3
Dependent Claim
25 words
The semiconductor device of claim 1 , wherein the epitaxial film comprises: a barrier layer made of AlGaN; and a well layer made of InGaN.
Claim 4
Dependent Claim
100 words
A semiconductor device comprising: a single substrate made of silicon carbide; a first epitaxial film formed on the single substrate and made of Al x In y Ga (1−x−y) N (where 0≦x≦1 and 0≦y≦1) lattice-matching with silicon carbide; a second epitaxial film selectively formed on the first epitaxial film and made of Al x In y Ga (1−x−y) N (where 0≦x≦1 and 0≦y≦1); an amplifier section comprising a gate formed on the first epitaxial film and a source layer and a drain layer which are formed within the single substrate; and another amplifier section formed on the second epitaxial film.
Claim 5
Dependent Claim
100 words
A semiconductor device comprising: a single substrate made of silicon carbide; a first epitaxial film formed on the single substrate and made of Al x In y Ga (1−x−y) N (where 0≦x≦1 and 0≦y≦1) lattice-matching with silicon carbide; a second epitaxial film selectively formed on the first epitaxial film and made of Al x In y Ga (1−x−y) N (where 0≦x≦1 and 0≦y≦1); an amplifier section comprising a gate formed on the first epitaxial film and a source layer and a drain layer which are formed within the single substrate; and another amplifier section formed on the second epitaxial film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-08-13 | 2005-02-12 | 2005-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-08-13 | 2009-02-12 | 2009-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-08-13 | 2013-02-12 | 2013-08-14 | $7700.00 | Window Closed / Lapsed |