US5124779A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon carbide semiconductor device with ohmic electrode consisting of alloy
Assignee: Sharp Corp
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Filing: 1990-10-17
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Granted: 1992-06-23
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Expires: 2010-10-17
Abstract
Abstract A silicon carbide semiconductor device is disclosed which includes a silicon carbide single-crystal layer and at least one ohmic electrode in contact with the silicon carbide single-crystal layer, wherein the ohmic electrode is made of a titanium-aluminum alloy. Also disclosed is a method of producing the silicon carbide semiconductor device.
Inventors
- 👤 Katsuki Furukawa
- 👤 Akira Suzuki
- 👤 Yoshihisa Fujii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 07:43
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/01; H10D12/031; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0115; H10D64/60; H10D64/62
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
34 words
A silicon carbide semiconductor device comprising a silicon carbide single-crystal layer and at least one ohmic electrode in contact with the silicon carbide single-crystal layer, wherein the ohmic electrode consists of a titanium-aluminum alloy.
Claim 2
Dependent Claim
34 words
A silicon carbide semiconductor device comprising a silicon carbide single-crystal layer and at least one ohmic electrode in contact with the silicon carbide single-crystal layer, wherein the ohmic electrode consists of a titanium-aluminum alloy.
Claim 3
Dependent Claim
32 words
A silicon carbide semiconductor device according to claim 1, wherein the titanium-aluminum alloy has an aluminum content of 15 to 65 percent by weight based on the total weight of the alloy.
Claim 4
Dependent Claim
22 words
A silicon carbide semiconductor device according to claim 1, wherein the silicon carbide single-crystal layer is of the 3C or 6H type.
Claim 5
Dependent Claim
67 words
A silicon carbide semiconductor device according to claim 1, further comprising a source region and a drain region, both of which are formed in the silicon carbide single-crystal layer, and a gate electrode formed above the silicon carbide single-crystal layer between the source region and the drain region, wherein the ohmic electrode is in contact with at least one of the source region and the drain region.
References Cited (Backward Citations)
US3201666A
Cited
US3121829A
Cited
US3063876A
Cited
US3409467A
Cited
US3900598A
Cited
US3972749A
Cited
US4267012A
Cited
US4990994A
Cited
US5006914A
Cited
US4918497A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-23 | 1995-12-23 | 1996-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-23 | 1999-12-23 | 2000-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-23 | 2003-12-23 | 2004-06-23 | $7700.00 | Window Closed / Lapsed |