Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
62 words
A semiconductor device fuse, comprising: a heat sink layer comprising a metal; a first dielectric layer disposed on said heat sink layer, said first dielectric layer having a first region of a first thickness bounded by one or more second regions having a second thickness substantially less than said first thickness; and a fuse material layer disposed on said first dielectric layer.
Claim 2
Dependent Claim
62 words
A semiconductor device fuse, comprising: a heat sink layer comprising a metal; a first dielectric layer disposed on said heat sink layer, said first dielectric layer having a first region of a first thickness bounded by one or more second regions having a second thickness substantially less than said first thickness; and a fuse material layer disposed on said first dielectric layer.
Claim 3
Dependent Claim
93 words
The fuse of claim 1 , further comprising: a second dielectric material layer disposed on said fuse material layer, whereby said second dielectric material layer has, a first thickness over said fuse material over the first region of said first dielectric material layer; and a second thickness bounding the first thickness of said second dielectric material layer; wherein reflectance of incident laser light from said second dielectric over said first portion of the fuse material is substantially less than that from the second thickness of the second dielectric material bounding the first thickness.
Claim 4
Dependent Claim
30 words
The fuse of claim 2 , wherein the first thickness of said second dielectric layer is such that the reflectance of incident laser light from said second dielectric is minimized.
Claim 5
Dependent Claim
29 words
The fuse of claim 2 , wherein the second thickness of said second dielectric is such that the reflectance of incident laser light from said second dielectric is maximized.
Claim 6
Dependent Claim
12 words
The fuse of claim 1 , wherein said fuse material comprises polysilicon.
Claim 7
Dependent Claim
13 words
The fuse of claim 1 , wherein said fuse material comprises a metal.
Claim 8
Dependent Claim
17 words
The fuse of claim 6 , wherein said metal is one of Al, AlCu, Cu and W.
Claim 9
Dependent Claim
35 words
The fuse of claim 1 , wherein said first dielectric comprises at least one of SiO 2 , Si 3 N 4 , SiO x N y (H z ), CaF 2 , and polyimide.
Claim 10
Dependent Claim
14 words
The fuse of claim 8 , wherein said first dielectric is SiO 2 .
Claim 11
Dependent Claim
17 words
The fuse of claim 1 , wherein said metal is one of Al, AlCu, Cu and W.
Claim 12
Dependent Claim
86 words
A semiconductor memory, comprising: a plurality of rows and columns of conductive lines; a semiconductor device fuse in electrical connection with at least one of said rows and columns, said fuse having, a heat sink layer comprising a metal, a dielectric layer disposed on said heat sink layer, said dielectric layer having a first region of a first thickness bounded by one or more second regions having a second thickness substantially less than said first thickness, and a fuse material layer disposed on said dielectric layer.
Claim 13
Dependent Claim
86 words
A semiconductor memory, comprising: a plurality of rows and columns of conductive lines; a semiconductor device fuse in electrical connection with at least one of said rows and columns, said fuse having, a heat sink layer comprising a metal, a dielectric layer disposed on said heat sink layer, said dielectric layer having a first region of a first thickness bounded by one or more second regions having a second thickness substantially less than said first thickness, and a fuse material layer disposed on said dielectric layer.
Claim 14
Dependent Claim
90 words
The semiconductor memory of claim 11 , further comprising: a second dielectric material layer disposed on said fuse material layer, whereby said second dielectric material layer has, a first thickness over said fuse material over the first region of said first dielectric material layer; and a second thickness of the dielectric material bounding the first thickness; wherein reflectance of incident laser light from said dielectric over said first portion of the fuse material is substantially less than that from a second thickness of the dielectric material bounding the first thickness.
Claim 15
Dependent Claim
30 words
The semiconductor memory of claim 12 , wherein the first thickness of said second dielectric layer is such that the reflectance of incident laser light from said dielectric is minimized.
Claim 16
Dependent Claim
29 words
The semiconductor memory of claim 12 , wherein the second thickness of said second dielectric is such that the reflectance of incident laser light from said dielectric is maximized.
Claim 17
Dependent Claim
14 words
The semiconductor memory of claim 11 , wherein said cell comprises a DRAM cell.
Claim 18
Dependent Claim
14 words
The semiconductor memory of claim 11 , wherein said cell comprises a DRAM cell.
Claim 19
Dependent Claim
14 words
The semiconductor memory of claim 11 , wherein said memory comprises a EEPROM cell.
Claim 20
Dependent Claim
14 words
The semiconductor memory of claim 11 , wherein said memory comprises a FLASH cell.
Claim 21
Dependent Claim
105 words
A semiconductor memory device comprising: a memory array; a plurality of metal layers overlaying said memory array, at least one of said metal layers providing electrical connections to said array; a semiconductor device fuse in at least one of said metal layers providing electrical connections to said array, said fuse having, a heat sink layer comprising a metal, a dielectric layer disposed on said heat sink layer, said dielectric layer having a first region of a first thickness bounded by one or more second regions having a second thickness substantially less than said first thickness, and a fuse material layer disposed on said dielectric layer.
Claim 22
Dependent Claim
105 words
A semiconductor memory device comprising: a memory array; a plurality of metal layers overlaying said memory array, at least one of said metal layers providing electrical connections to said array; a semiconductor device fuse in at least one of said metal layers providing electrical connections to said array, said fuse having, a heat sink layer comprising a metal, a dielectric layer disposed on said heat sink layer, said dielectric layer having a first region of a first thickness bounded by one or more second regions having a second thickness substantially less than said first thickness, and a fuse material layer disposed on said dielectric layer.
Claim 23
Dependent Claim
90 words
The semiconductor memory of claim 19 , further comprising: a second dielectric material layer disposed on said fuse material layer, whereby said second dielectric material layer has, a first thickness over said fuse material over the first region of said first dielectric material layer; and a second thickness of the dielectric material bounding the first thickness; wherein reflectance of incident laser light from said dielectric over said first portion of the fuse material is substantially less than that from a second thickness of the dielectric material bounding the first thickness.
Claim 24
Dependent Claim
29 words
The fuse of claim 20 , wherein the first thickness of said second dielectric layer is such that the reflectance of incident laser light from said dielectric is minimized.
Claim 25
Dependent Claim
28 words
The fuse of claim 20 , wherein the second thickness of said second dielectric is such that the reflectance of incident laser light from said dielectric is maximized.