Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
202 words
An integrated circuit device comprising: an active circuit provided in an active circuit area at a surface of a semiconductor body, said active circuit comprising active circuit devices, said active circuit further comprising an interconnect structure comprising at least one patterned metal layer disposed in overlying relationship relative to the active circuit devices and a layer of passivating material disposed atop the interconnect structure, a plurality of bond pads, each of said bond pads providing a wire-bonding region for bonding a wire, said bond pads being disposed substantially over the active circuit area, electrical connections between the bond pads and the active circuit devices, said electrical connections extending from a circuit-connecting region provided by the bond pads and passing through the layer of passivating material, characterized in that the circuit-connecting region of the bond pads is situated substantially outside of the wire-bonding region of the bond pads, the layer of passivating material substantially consists of inorganic material, the layer of passivating material beneath the wire-bonding region of the bond pads is substantially free from interruptions, the layer of passivating material and the bond pads have thicknesses that jointly counteract the occurrence of damage to the active circuit during bonding of the wire.
Claim 2
Dependent Claim
202 words
An integrated circuit device comprising: an active circuit provided in an active circuit area at a surface of a semiconductor body, said active circuit comprising active circuit devices, said active circuit further comprising an interconnect structure comprising at least one patterned metal layer disposed in overlying relationship relative to the active circuit devices and a layer of passivating material disposed atop the interconnect structure, a plurality of bond pads, each of said bond pads providing a wire-bonding region for bonding a wire, said bond pads being disposed substantially over the active circuit area, electrical connections between the bond pads and the active circuit devices, said electrical connections extending from a circuit-connecting region provided by the bond pads and passing through the layer of passivating material, characterized in that the circuit-connecting region of the bond pads is situated substantially outside of the wire-bonding region of the bond pads, the layer of passivating material substantially consists of inorganic material, the layer of passivating material beneath the wire-bonding region of the bond pads is substantially free from interruptions, the layer of passivating material and the bond pads have thicknesses that jointly counteract the occurrence of damage to the active circuit during bonding of the wire.
Claim 3
Dependent Claim
34 words
An integrated circuit device as claimed in claim 1 , characterized in that the wire-bonding region of the bond pads and the circuit-connecting region of the bond pads are part of one common layer.
Claim 4
Dependent Claim
31 words
An integrated circuit device as claimed in claim 1 , characterized in that the wire-bonding region of the bond pads is located substantially at the periphery of the active circuit area.
Claim 5
Dependent Claim
18 words
An integrated circuit device as claimed in claim 1 , characterized in that the bond pads comprise aluminium.
Claim 6
Dependent Claim
21 words
An integrated circuit device as claimed in claim 1 , characterized in that the layer of passivating material comprises silicon nitride.
Claim 7
Dependent Claim
42 words
An integrated circuit device as claimed in claim 5 , characterized in that the layer of passivating material has a thickness of at least 1.2 μm and that the bond pads comprise aluminum and have a thickness of at least 1.1 μm.
Claim 8
Dependent Claim
47 words
An integrated circuit device as claimed in claim 6 , characterized in that the layer of passivating material has a thickness in the range of about 1.4 to 2.0 μm and that the bond pads have a thickness in the range of about 2 to 3 μm.
Claim 9
Dependent Claim
17 words
An integrated circuit device as claimed in claim 1 , characterized in that the wire comprises gold.