Semiconductor device having interconnect lines and connection electrodes formed in groove portions of an insulating layer

Claim 2

A semiconductor device comprising: a semiconductor substrate having an upper surface and a lower surface; a plurality of first connection electrodes formed on the upper surface of the semiconductor substrate; a first insulating layer wholly covering the upper surface of the semiconductor substrate having a plurality of first openings over the first connection electrodes; a second insulating layer formed on the first insulating layer having a plurality of second openings over the plurality of first openings; a plurality of surface active layers formed at predetermined places on the surface of the second insulating film which continuously extend from the inside of the second openings; a plurality of interconnect lines having a plurality of second connection electrodes formed on the first connection electrodes, in the first and second openings and on the surface active layers; a third insulating layer wholly covering the surfaces of the second insulating layer and the interconnect lines, from which parts of the second connection electrodes are exposed; and a plurality of conductive bumps formed on the parts of second connection electrodes.

Claim 3

The semiconductor device according to claim 1, wherein the second and third insulating layers comprise at least one of an epoxy resin and a polyimide resin.

Claim 4

The semiconductor device according to claim 1, wherein the plurality of conductive bumps are such that a pitch between adjacent conductive bumps is longer than a pitch between adjacent first connection electrodes.

Claim 5

The semiconductor device according to claim 1, wherein the first insulating layer comprises an inorganic material.

Claim 6

The semiconductor device according to claim 1 wherein the interconnect lines each comprise at least one conductive layer.

Claim 7

The semiconductor device according to claim 5, wherein the conductive layers comprise materials arranged in an ionization-tendency increasing order from a surface active layer side.

Claim 8

The semiconductor device according to claim 1, wherein each of the interconnect lines includes a conductive paste filled in an interconnect line formation area and second connection electrode formation area, the interconnect line formation area containing an exposed surface of the first connection electrode in that opening in the second insulating layer which has the same configuration as the surface active layer.

Claim 9

The semiconductor device according to claim 1, wherein each of the interconnect lines includes a first conductor buried in the first and second openings and a second conductor formed on the first conductor and on the surface active layer.

Claim 10

The semiconductor device according to claim 1, wherein the first connection electrodes of the semiconductor substrate are arranged along the peripheral edge of the semiconductor substrate and the conductive bumps are arranged in a matrix array over a whole surface of the second insulating film.

Claim 11

The semiconductor device according to claim 7, wherein the conductive paste comprises a paste prepared by mixing conductive particles containing silver, gold, solder, carbon, zinc, nickel, copper, an alloy including at least one of silver, gold, solder, carbon, zinc, nickel, or copper, or an insulating resin including at least one of an epoxy-series resin and polyimide-series resin.

Claim 12

The semiconductor substrate according to claim 1, wherein the surface active layers are hydrophilic.

Claim 13

A semiconductor device comprising: a semiconductor substrate having an upper surface and a lower surface; a plurality of first connection electrodes formed on the upper surface of the semiconductor substrate; a first insulating layer formed on the upper surface of the semiconductor substrate and on the first connection electrodes and having a plurality of first openings over the first connection electrodes; a second insulating layer covering the upper surface, side surface and lower surface of the semiconductor substrate and having a plurality of second openings formed over the first openings, at the upper surface side of the substrate and a plurality of third openings formed on the lower surface side of the substrate; a plurality of grooves formed at predetermined places in the surface of the second insulating layer and continuously connecting the first, second and third openings; a plurality of surface active layers formed in the grooves; a plurality of interconnect lines formed on the surfaces of the surface active layers and connecting the first connection electrodes formed on the upper surface of the substrate to the second connection electrodes formed beneath the lower surface side of the substrate; and a plurality of conductive bumps formed on the second connection electrodes and over the third openings.

Claim 14

A semiconductor device comprising: a semiconductor substrate having an upper surface and a lower surface; a plurality of first connection electrodes formed on the upper surface of the semiconductor substrate; a first insulating layer formed on the upper surface of the semiconductor substrate and on the first connection electrodes and having a plurality of first openings over the first connection electrodes; a second insulating layer covering the upper surface, side surface and lower surface of the semiconductor substrate and having a plurality of second openings formed over the first openings, at the upper surface side of the substrate and a plurality of third openings formed on the lower surface side of the substrate; a plurality of grooves formed at predetermined places in the surface of the second insulating layer and continuously connecting the first, second and third openings; a plurality of surface active layers formed in the grooves; a plurality of interconnect lines formed on the surfaces of the surface active layers and connecting the first connection electrodes formed on the upper surface of the substrate to the second connection electrodes formed beneath the lower surface side of the substrate; and a plurality of conductive bumps formed on the second connection electrodes and over the third openings.

Claim 15

The semiconductor substrate according to claim 12, wherein the surface active layers are hydrophilic.