Upper redundant layer for damascene metallization

Claim 1

A method for producing an interconnect device in a semiconductor device, said method comprising: (a) providing a substrate with a dielectric film positioned thereon, said dielectric film having an upper surface; (b) forming a trench in said dielectric film, said trench extending down from said upper surface; (c) depositing a first conductive film over said upper surface of said dielectric film and in said trench without filling said trench; (d) depositing a refractory metal film on said first conductive film including in said trench, without filling said trench; (e) depositing a second conductive film on said refractory metal film and filling said trench; and (f) planarizing by removing portions of said first conductive film, said refractory metal film, and said second conductive film which lie above a plane formed by said upper surface of said dielectric film to form an interconnect device within said trench, said interconnect device having a top surface which is generally co-planar with said upper surface, said top surface being formed of at least said first conductive film, said refractory metal film, and said second conductive film.

Claim 2

A method for producing an interconnect device in a semiconductor device, said method comprising: (a) providing a substrate with a dielectric film positioned thereon, said dielectric film having an upper surface; (b) forming a trench in said dielectric film, said trench extending down from said upper surface; (c) depositing a first conductive film over said upper surface of said dielectric film and in said trench without filling said trench; (d) depositing a refractory metal film on said first conductive film including in said trench, without filling said trench; (e) depositing a second conductive film on said refractory metal film and filling said trench; and (f) planarizing by removing portions of said first conductive film, said refractory metal film, and said second conductive film which lie above a plane formed by said upper surface of said dielectric film to form an interconnect device within said trench, said interconnect device having a top surface which is generally co-planar with said upper surface, said top surface being formed of at least said first conductive film, said refractory metal film, and said second conductive film.

Claim 19

A method for producing an interconnect wire in a semiconductor device, said method comprising: (a) providing a substrate with a dielectric film positioned thereon, said dielectric film having an upper surface; (b) forming grooves in said dielectric film, said grooves extending down from said upper surface; (c) depositing a first conductive film over said upper surface of said dielectric film and in said grooves without filling said grooves; (d) depositing a refractory metal film on said first conductive film including in said grooves without filling said grooves; (e) depositing a second conductive film on said refractory metal film and filling said grooves; (f) annealing said films; and (g) planarizing by removing portions of said first conductive film, said refractory metal film, and said second conductive film which lie above a plane formed by said upper surface to form an interconnect wire within said grooves; wherein a top surface of said interconnect wire is generally co-planar with said upper surface and is formed of said first conductive film, said refractory metal film, and said second conductive film.

Claim 20

A method for producing an interconnect wire in a semiconductor device, said method comprising: (a) providing a substrate with a dielectric film positioned thereon, said dielectric film having an upper surface; (b) forming grooves in said dielectric film, said grooves extending down from said upper surface; (c) depositing a first conductive film over said upper surface of said dielectric film and in said grooves without filling said grooves; (d) depositing a refractory metal film on said first conductive film including in said grooves without filling said grooves; (e) depositing a second conductive film on said refractory metal film and filling said grooves; (f) annealing said films; and (g) planarizing by removing portions of said first conductive film, said refractory metal film, and said second conductive film which lie above a plane formed by said upper surface to form an interconnect wire within said grooves; wherein a top surface of said interconnect wire is generally co-planar with said upper surface and is formed of said first conductive film, said refractory metal film, and said second conductive film.