US5656542A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing wiring in groove
Assignee: Ebara Corp
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Filing: 1995-10-18
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Granted: 1997-08-12
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Expires: 2015-10-18
Abstract
Abstract In a semiconductor device and a method for manufacturing the same according to the present invention, for example, an insulating film is deposited on a silicon substrate, and a concave groove is formed in the insulating film in accordance with a predetermined wiring pattern. Titanium and palladium are deposited in sequence on the insulating film to form a titanium film and a palladium film, respectively. A silver film is formed on the palladium film by electroplating, and a groove-shaped silver wiring layer is formed by polishing. The resultant structure is annealed at a temperature of about 700° C., and an intermetallic compound is formed by alloying the titanium film and palladium film with each other. Consequently, a burying type wiring layer whose resistance is lower than that of aluminum, is constituted by the silver wiring layer and intermetallic compound.
Inventors
- 👤 Masahiro Miyata
- 👤 Hirokazu Ezawa
- 👤 Naoaki Ogure
- 👤 Manabu Tsujimura
- 👤 Takeyuki Ohdaira
- 👤 Hiroaki Inoue
- 👤 Yukio Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:23
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/042; H10W20/043; H10W20/033; H10W20/047; H10W20/049; H10W20/056; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4432; H10W20/4435
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
225 words
A method for manufacturing a semiconductor device, comprising the steps of: providing an insulating film on a substrate; providing a wiring groove portion on a surface of said insulating film; providing a first metal layer on said insulating film on which said wiring groove portion is formed; providing a second metal layer on said first metal layer, said second metal layer having a property capable of forming an intermetallic compound together with said first metal layer; providing a third metal layer on said second metal layer, said third metal layer having a property capable of forming a continuous solid solution together with said second metal layer; removing said first metal layer, said second metal layer, and said third metal layer formed on said insulating film, except in said wiring groove portion, thereby forming a wiring layer from said third metal layer remaining in said wiring groove portion; and forming an intermetallic compound from said first metal layer and said second metal layer by annealing at a temperature capable of forming the intermetallic compound and of preventing a resistivity of said third metal layer from increasing when combined to form the continuous solution with said second metal layer, wherein said intermetallic compound and said wiring layer form a buried-type wiring layer buried into said wiring groove portion and flush with the surface of said insulating film.
Claim 2
Independent Claim
225 words
A method for manufacturing a semiconductor device, comprising the steps of: providing an insulating film on a substrate; providing a wiring groove portion on a surface of said insulating film; providing a first metal layer on said insulating film on which said wiring groove portion is formed; providing a second metal layer on said first metal layer, said second metal layer having a property capable of forming an intermetallic compound together with said first metal layer; providing a third metal layer on said second metal layer, said third metal layer having a property capable of forming a continuous solid solution together with said second metal layer; removing said first metal layer, said second metal layer, and said third metal layer formed on said insulating film, except in said wiring groove portion, thereby forming a wiring layer from said third metal layer remaining in said wiring groove portion; and forming an intermetallic compound from said first metal layer and said second metal layer by annealing at a temperature capable of forming the intermetallic compound and of preventing a resistivity of said third metal layer from increasing when combined to form the continuous solution with said second metal layer, wherein said intermetallic compound and said wiring layer form a buried-type wiring layer buried into said wiring groove portion and flush with the surface of said insulating film.
Claim 3
Dependent Claim
23 words
The method according to claim 1, wherein said first metal layer includes one of a single metal and an alloy containing the metal.
Claim 4
Independent Claim
22 words
The method according to claims 1 or 2, wherein said first metal layer includes one of titanium and an alloy containing titanium.
Claim 5
Dependent Claim
23 words
The method according to claim 1, wherein said second metal layer includes one of a single metal and an alloy containing the metal.
Claim 6
Independent Claim
22 words
The method according to claims 1 or 4, wherein said second metal layer includes one of palladium and an alloy containing palladium.
Claim 7
Dependent Claim
22 words
The method according to claim 1, wherein said third metal layer includes one of a single metal and an alloy containing metal.
Claim 8
Independent Claim
22 words
The method according to claims 1 or 6, wherein said third metal layer includes one of silver and an alloy containing silver.
Claim 9
Dependent Claim
28 words
The method according to claim 1, wherein said second metal layer has a thickness which is equal to or smaller than a thickness of said first metal layer.
Claim 10
Independent Claim
21 words
The method according to claims 1 or 8, wherein the thickness of said second metal layer is smaller than 100 nm.
Claim 11
Independent Claim
27 words
The method according to claims 1, 6 or 8, wherein said third metal layer is a plating film including one of silver and an alloy containing silver.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-11 | 2001-02-10 | 2001-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-11 | 2005-02-10 | 2005-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-11 | 2009-02-10 | 2009-08-12 | $7700.00 | Window Closed / Lapsed |