Abstract A semiconductor device having an ohmic electrode which has formed on the surface of a p-type III-V compound semiconductor an assembly of a first Ti layer, a second Zn layer, a third metal layer made of one element selected from among Pt, Mo, W and Cr, and a fourth Au layer is disclosed. A process for producing such semiconductor device is also disclosed. The present invention provides a novel ohmic electrode having a low contact resistance comparable to that of a conventional electrode formed by deposition of successive Au, Zn and Au layers. The novel electrode also has the advantage of another conventional electrode wherein the Au electromigration is held to a minimum by forming an assembly of a Ti layer, a metal layer made of an element selected from among Pt, Mo, W and Cr, and an Au layer.
A process for producing a semiconductor device comprising the following steps: forming on surface of a p-type III-V compound semiconductor in sequence a first ti layer having a thickness of less than 100 Å, a second Zn layer, a third metal layer made of one element selected from the group consisting of Pt, Mo, W and Cr, and a fourth Au layer; heat-treating the assembly either in a gaseous atmosphere made of H 2 , N 2 , Ar or a mixture thereof or in a vacuum so that Zn in the second layer penetrates through the first Ti layer to reach the surface of the semiconductor, thereby forming a layer of an alloy of said semiconductor with Zn.
Claim 2
Dependent Claim
119 words
A process for producing a semiconductor device comprising the following steps: forming on surface of a p-type III-V compound semiconductor in sequence a first ti layer having a thickness of less than 100 Å, a second Zn layer, a third metal layer made of one element selected from the group consisting of Pt, Mo, W and Cr, and a fourth Au layer; heat-treating the assembly either in a gaseous atmosphere made of H 2 , N 2 , Ar or a mixture thereof or in a vacuum so that Zn in the second layer penetrates through the first Ti layer to reach the surface of the semiconductor, thereby forming a layer of an alloy of said semiconductor with Zn.
Claim 3
Dependent Claim
23 words
A process for producing a semiconductor device as claimed in claim 1, wherein said first Ti layer has a thickness of approximately Å.