US5661345A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a single-crystal metal wiring
Assignee: Toshiba Corp
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Filing: 1994-12-01
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Granted: 1997-08-26
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Expires: 2014-12-01
Abstract
Abstract The method of producing a semiconductor device includes the steps of forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metal film on the substrate while reaction with the surface of the substrate is suppressed; and agglomerating the metal film by in-situ annealing, wherein agglomeration of the metal film is started before the metal film reacts with the surface of the substrate due to annealing, while formation of a native oxide on the metal film is suppressed, and whereby the metal film is filled into the groove by annealing at a predetermined temperature for a predetermined period of time. The structure of the semiconductor device includes an insulator in which there is formed a groove portion having a predetermined pattern shape and an electrode interconnection made of a single-crystal metal which is filled in the groove portion.
Inventors
- 👤 Junichi Wada
- 👤 Hisashi Kaneko
- 👤 Kyoichi Suguro
- 👤 Nobuo Hayasaka
- 👤 Haruo Okano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:33
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/059; H10W20/40; H10W20/41; H10W20/425; H10W20/43; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4421; H10W20/4424; H10W20/495
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
48 words
A semiconductor device comprising: an insulator in which there is formed a plurality of groove portions, each of which is kept separate one from the other and having a predetermined shape; and single-crystal electrode interconnections, filled in the groove portions, each of which differs in crystal orientation thereof.
Claim 2
Dependent Claim
48 words
A semiconductor device comprising: an insulator in which there is formed a plurality of groove portions, each of which is kept separate one from the other and having a predetermined shape; and single-crystal electrode interconnections, filled in the groove portions, each of which differs in crystal orientation thereof.
Claim 3
Dependent Claim
54 words
A semiconductor device comprising: an insulator in which there is formed a groove portion having a predetermined pattern shape; and an electrode interconnection made of a single-crystal metal which is filled in the groove portion, and a wettability improving layer of polycrystalline or amorphous material is formed between the insulator and the single-crystal metal.
Claim 4
Dependent Claim
54 words
A semiconductor device comprising: an insulator in which there is formed a groove portion having a predetermined pattern shape; and an electrode interconnection made of a single-crystal metal which is filled in the groove portion, and a wettability improving layer of polycrystalline or amorphous material is formed between the insulator and the single-crystal metal.
Claim 5
Dependent Claim
103 words
A semiconductor device comprising: a first insulator in which there is formed a groove portion having a predetermined pattern shape; a second insulator in which there is formed a groove portion having a predetermined pattern shape; a first electrode interconnection made of a single-crystal metal which is filled in the groove portion in the first insulator; and a second electrode interconnection made of a single-crystal metal which is filled in the groove portion in the second insulator, and the first and second electrode interconnections are connected with a single-crystal metal which has a same crystal orientation as the first and second electrode interconnections.
Claim 6
Dependent Claim
103 words
A semiconductor device comprising: a first insulator in which there is formed a groove portion having a predetermined pattern shape; a second insulator in which there is formed a groove portion having a predetermined pattern shape; a first electrode interconnection made of a single-crystal metal which is filled in the groove portion in the first insulator; and a second electrode interconnection made of a single-crystal metal which is filled in the groove portion in the second insulator, and the first and second electrode interconnections are connected with a single-crystal metal which has a same crystal orientation as the first and second electrode interconnections.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-25 | 2001-02-24 | 2001-08-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-25 | 2005-02-24 | 2005-08-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-25 | 2009-02-24 | 2009-08-26 | $7700.00 | Window Closed / Lapsed |