EP0407133A2
Expired / Lapsed
EP
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Semiconductor device and method of manufacturing such semiconductor device
Assignee: Toshiba Corp
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Filing: 1990-07-02
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Granted: —
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Expires: 2010-07-02
Abstract
Abstract The gist is that the close-packed plane of a single crystal forming an electrode line such as electrodes or lines of a semiconductor device whose active regions are reduced in size, i.e., highly integrated, is arranged parallel to the longitudinal direction of the line; or in the case of a polycrystalline electrode line, the angle formed between the normal line direction of the close-packed plane of its crystal grains and that of the electrode line is arranged to be 80° or less.
Inventors
- 👤 Masahiko C/O Intellectual Property Div. Hasunuma
- 👤 Hisashi C/O Intellectual Property Div. Kaneko
- 👤 Atsuhiko C/O Intellectual Property Div. Sawabe
- 👤 Takashi C/O Intellectual Property Div. Kawanoue
- 👤 Yoshiko C/O Intellectual Property Div. Kohanawa
- 👤 Shuichi C/O Intellectual Property Div. Komatsu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 21:13
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/412; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; H10W20/4421; H10W20/4424; H10W20/4432; H10W20/4435; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 49
Claim 1
Independent Claim
74 words
A semiconductor device comprising a semiconductor substrate having active regions electrically isolated from each other on a predetermined surface thereof, and a single layer or multilayer electrode line arranged on said semiconductor substrate through an insulating layer, wherein at least one layer of said single layer or multilayer electrode line is made of a metal single crystal and the close-packed plane of said crystal is arranged parallel to the longitudinal direction of said line.
Claim 2
Dependent Claim
74 words
A semiconductor device comprising a semiconductor substrate having active regions electrically isolated from each other on a predetermined surface thereof, and a single layer or multilayer electrode line arranged on said semiconductor substrate through an insulating layer, wherein at least one layer of said single layer or multilayer electrode line is made of a metal single crystal and the close-packed plane of said crystal is arranged parallel to the longitudinal direction of said line.
Claim 3
Dependent Claim
26 words
A semiconductor device according to claim 1, wherein said electrode line is made of a metal single crystal of Al, Cu, Au, Ag or their alloy.
Claim 4
Dependent Claim
32 words
A semiconductor device according to claim 1, wherein said electrode line is coated with either one of silicides, nitrides, oxides, or carbides of a refractory metal crystal or a refractory metal itself.
Claim 5
Dependent Claim
26 words
A semiconductor device according to claim 1, wherein connection of a via hole between said multilayer electrode line is formed of an epitaxially grown single crystal.
Claim 6
Dependent Claim
20 words
A semiconductor device according to claim 1, wherein said electrode line is formed on the surface of a stepped pattern.
Claim 7
Dependent Claim
21 words
A semiconductor device according to claim 3, wherein said refractory metal is one of Mo, W, Ti, Ta, Nb, or V.
Claim 8
Dependent Claim
75 words
A semiconductor device comprising a semiconductor substrate having active regions electrically isolated from each other on a predetermined surface thereof, and a single layer or multilayer electrode line arranged on said semiconductor substrate through an insulating layer, wherein at least one layer of said electrode line is made of a lamination of a plurality of electrode line layers and at least one layer of said electrode line layer is made of a single crystal line.
Claim 9
Dependent Claim
75 words
A semiconductor device comprising a semiconductor substrate having active regions electrically isolated from each other on a predetermined surface thereof, and a single layer or multilayer electrode line arranged on said semiconductor substrate through an insulating layer, wherein at least one layer of said electrode line is made of a lamination of a plurality of electrode line layers and at least one layer of said electrode line layer is made of a single crystal line.
Claim 10
Dependent Claim
29 words
A semiconductor device according to claim 7, wherein the close-packed plane of the crystal of said single crystal line is arranged parallel to the longitudinal direction of said line.
Claim 11
Dependent Claim
20 words
A semiconductor device according to claim 7, wherein the lowermost electrode line layer is formed of a metal single crystal.
Claim 12
Dependent Claim
20 words
A semiconductor device according to claim 7, wherein the uppermost electrode line layer is formed of a metal single crystal.
Claim 13
Dependent Claim
36 words
A semiconductor device according to claim 9, wherein a metal single crystal electrode line layer having the crystal orientation different from that of said lowermost electrode line layer is formed on said lowermost electrode line layer.
Claim 14
Dependent Claim
37 words
A semiconductor device according to claim 9, wherein a second metal single crystal electrode line layer is formed on said lowermost electrode line layer through a crystal substance which is different from said lowermost electrode line layer.
Claim 15
Dependent Claim
37 words
A semiconductor device according to claim 7, wherein said lowermost electrode line layer interposes a layer of such crystal structure that the ratio of the c-axis to the a-axis of a hexagonal crystal is 1.60 or more.
Claim 16
Dependent Claim
35 words
A semiconductor device according to claim 12, wherein said layer of such crystal structure that the ratio of the c-axis to the a-axis of a hexagonal crystal is 1.60 or more is Mg or AlN.
Claim 17
Dependent Claim
80 words
A semiconductor device comprising a semiconductor substrate having active regions electrically isolated from each other on a predetermined surface thereof, and a single layer or multilayer electrode line arranged on said semiconductor substrate through an insulating layer, wherein at least one layer of said electrode line is made of a metal polycrystal and is arranged so that the normal direction of the close-packed plane of said polycrystal forms 80° or less with the normal line direction of said electrode line.
Claim 18
Dependent Claim
80 words
A semiconductor device comprising a semiconductor substrate having active regions electrically isolated from each other on a predetermined surface thereof, and a single layer or multilayer electrode line arranged on said semiconductor substrate through an insulating layer, wherein at least one layer of said electrode line is made of a metal polycrystal and is arranged so that the normal direction of the close-packed plane of said polycrystal forms 80° or less with the normal line direction of said electrode line.
Claim 19
Dependent Claim
42 words
A semiconductor device according to claim 15, wherein a layer of such crystal structure that the ratio of the c-axis to the a-axis of a hexagonal crystal is 1.60 or more is interposed below said electrode line made of a metal polycrystal.
Claim 20
Dependent Claim
35 words
A semiconductor device according to claim 16, wherein said layer of such crystal structure that the ratio of the c-axis to the a-axis of a hexagonal crystal is 1.60 or more is Mg or AlN.
Claim 21
Dependent Claim
97 words
A semiconductor device comprising a semiconductor substrate having active regions electrically isolated from each other on a predetermined surface thereof, and a single layer or multilayer electrode line arranged on said semiconductor substrate through an insulating layer, wherein at least one layer of said electrode line is made of a lamination of a plurality of electrode line layers, and the normal direction of one of the equivalent close-packed lines plane of the crystal of at least one of said plurality of electrode line layers forms 10° or less with the normal line direction of said electrode line.
Claim 22
Dependent Claim
97 words
A semiconductor device comprising a semiconductor substrate having active regions electrically isolated from each other on a predetermined surface thereof, and a single layer or multilayer electrode line arranged on said semiconductor substrate through an insulating layer, wherein at least one layer of said electrode line is made of a lamination of a plurality of electrode line layers, and the normal direction of one of the equivalent close-packed lines plane of the crystal of at least one of said plurality of electrode line layers forms 10° or less with the normal line direction of said electrode line.
Claim 23
Dependent Claim
69 words
A semiconductor device according to claim 18, wherein said electrode line is of laminated type having at least two layers such as a first layer forming an underlayer having an irregular or regular groove on the surface thereof and a second conductor upper layer whose melting point is equal to or lower than that of said first layer and which has the same crystal system as said first layer.
Claim 24
Dependent Claim
18 words
A semiconductor device according to claim 19, wherein said second conductor layer is Al, Cu, Ag, or Au.
Claim 25
Dependent Claim
26 words
A semiconductor device according to claim 19, wherein said first layer forming the underlayer is made of a material whose resistivity is 200 µΩ·cm or less.
Claim 26
Independent Claim
108 words
A method of manufacturing a semiconductor device comprising the steps of: forming a fine active region on a predetermined surface of a semiconductor substrate; forming a thin insulating layer on said semiconductor substrate having said active region thereon and a predetermined contact hole on said insulating layer; and forming a single crystal metal film on said insulating layer formed surface and patterning said single crystal metal film into a fine electrode line; wherein said single crystal metal film is formed by causing said single crystal metal film to be deposited while causing a single crystal made member to come in contact with the surface of said semiconductor substrate.
Claim 27
Independent Claim
108 words
A method of manufacturing a semiconductor device comprising the steps of: forming a fine active region on a predetermined surface of a semiconductor substrate; forming a thin insulating layer on said semiconductor substrate having said active region thereon and a predetermined contact hole on said insulating layer; and forming a single crystal metal film on said insulating layer formed surface and patterning said single crystal metal film into a fine electrode line; wherein said single crystal metal film is formed by causing said single crystal metal film to be deposited while causing a single crystal made member to come in contact with the surface of said semiconductor substrate.
Claim 28
Dependent Claim
27 words
A method of manufacturing a semiconductor device according to claim 22, wherein said single crystal made member is a substrate supporting body for supporting said semiconductor substrate.
Claim 29
Dependent Claim
30 words
A method of manufacturing a semiconductor device according to claim 22, wherein said single crystal made member is a cover with holes arranged on the surface of said semiconductor substrate.
Claim 30
Dependent Claim
65 words
In a method of manufacturing a semiconductor device having a single crystal line or a single crystal line layer, said method comprising the steps of: subjecting the line forming surface of said single crystal line to an ozone or plasma treatment; forming a monatomic layer composed of a film forming material on said treated surface; and growing a single crystal film by a CVD method.
Claim 31
Dependent Claim
65 words
In a method of manufacturing a semiconductor device having a single crystal line or a single crystal line layer, said method comprising the steps of: subjecting the line forming surface of said single crystal line to an ozone or plasma treatment; forming a monatomic layer composed of a film forming material on said treated surface; and growing a single crystal film by a CVD method.
Claim 32
Dependent Claim
101 words
In a method of manufacturing a semiconductor device having a single crystal line or a single crystal line layer or a polycrystalline line or a polycrystalline line layer, said method comprising the steps of: giving an energy mechanically to evaporated film forming material vapor so that said evaporated film forming material vapor can be dissolved into a single atom; and depositing said dissolved single atom on the line forming surface of said semiconductor substrate thereby to form a single crystal metal film or a highly orientated metal film, when forming said metal film for forming said lines or said line layers.
Claim 33
Dependent Claim
101 words
In a method of manufacturing a semiconductor device having a single crystal line or a single crystal line layer or a polycrystalline line or a polycrystalline line layer, said method comprising the steps of: giving an energy mechanically to evaporated film forming material vapor so that said evaporated film forming material vapor can be dissolved into a single atom; and depositing said dissolved single atom on the line forming surface of said semiconductor substrate thereby to form a single crystal metal film or a highly orientated metal film, when forming said metal film for forming said lines or said line layers.
Claim 34
Dependent Claim
91 words
In a method of manufacturing a semiconductor device having a single crystal line or a single crystal line layer or a polycrystalline line or a polycrystalline line layer, said method comprising the step of: forming a monoatomic metal step pattern by the decomposition of a monomolecular adsorption layer with inadiating an energy beam or an electromagnetic wave on the line forming surface of said semiconductor substrate; and depositing a single crystal metal film or a highly oriented metal film, when forming said metal film for forming said lines or line layers.
Claim 35
Dependent Claim
91 words
In a method of manufacturing a semiconductor device having a single crystal line or a single crystal line layer or a polycrystalline line or a polycrystalline line layer, said method comprising the step of: forming a monoatomic metal step pattern by the decomposition of a monomolecular adsorption layer with inadiating an energy beam or an electromagnetic wave on the line forming surface of said semiconductor substrate; and depositing a single crystal metal film or a highly oriented metal film, when forming said metal film for forming said lines or line layers.
Claim 36
Dependent Claim
102 words
In a method of manufacturing a semiconductor device having a single crystal line or a single crystal line layer or a polycrystalline line or a polycrystalline line layer, said method comprising the steps of: giving an electric discharge energy to evaporated film forming material vapor so that said evaporated film forming material vapor can be dissolved into a single atom; and depositing said dissolved single atom on the line forming surface of said semiconductor substrate thereby to form a single crystal metal film or a highly orientated metal film, when forming said metal film for forming said lines or said line layers.
Claim 37
Dependent Claim
102 words
In a method of manufacturing a semiconductor device having a single crystal line or a single crystal line layer or a polycrystalline line or a polycrystalline line layer, said method comprising the steps of: giving an electric discharge energy to evaporated film forming material vapor so that said evaporated film forming material vapor can be dissolved into a single atom; and depositing said dissolved single atom on the line forming surface of said semiconductor substrate thereby to form a single crystal metal film or a highly orientated metal film, when forming said metal film for forming said lines or said line layers.
Claim 38
Independent Claim
168 words
A method of manufacturing a semiconductor device comprising the steps of: forming a single crystal metal film on a single crystal semiconductor substrate thereby to form an inorganic insulating layer of a relatively low melting point on the surface of said single crystal metal film; forming an inorganic insulating layer of a relatively high melting point on a predetermined surface of a semiconductor substrate having an active region; evaporating both of said semiconductor substrates by laminating each of said inorganic insulating layers so as to face each other thereby to bond said semiconductor substrates together; exposing a single crystal metal film by removing said semiconductor substrate supporting said single crystal metal film of said evaporated and bonded laminated body; forming a predetermined contact hole on said exposed single crystal metal film and an insulating layer in the lower layer below said exposed single crystal metal film thereby to cause a conductor to fill said contact hole; and processing said exposed single crystal metal film into an electrode line.
Claim 39
Independent Claim
168 words
A method of manufacturing a semiconductor device comprising the steps of: forming a single crystal metal film on a single crystal semiconductor substrate thereby to form an inorganic insulating layer of a relatively low melting point on the surface of said single crystal metal film; forming an inorganic insulating layer of a relatively high melting point on a predetermined surface of a semiconductor substrate having an active region; evaporating both of said semiconductor substrates by laminating each of said inorganic insulating layers so as to face each other thereby to bond said semiconductor substrates together; exposing a single crystal metal film by removing said semiconductor substrate supporting said single crystal metal film of said evaporated and bonded laminated body; forming a predetermined contact hole on said exposed single crystal metal film and an insulating layer in the lower layer below said exposed single crystal metal film thereby to cause a conductor to fill said contact hole; and processing said exposed single crystal metal film into an electrode line.
Claim 40
Independent Claim
138 words
A method of manufacturing a semiconductor device comprising the steps of: forming a first conductor layer on a predetermined surface of a semiconductor substrate having an active region through an insulating layer and processing said first conductor layer so that said first conductor layer has an irregular surface; coating a second conductor layer on the surface of said first conductor layer whose surface has been processed into a fine irregularly or regularly grooved surface, said second conductor layer being composed of a material having a melting point equal to or lower than that of said first conductor layer and having the same crystal system as said first conductor layer; heating said semiconductor substrate having said second conductive body layer coated thereon thereby to recrystallize said second conductor layer; and processing said laminated conductor layers into an electrode line.
Claim 41
Independent Claim
138 words
A method of manufacturing a semiconductor device comprising the steps of: forming a first conductor layer on a predetermined surface of a semiconductor substrate having an active region through an insulating layer and processing said first conductor layer so that said first conductor layer has an irregular surface; coating a second conductor layer on the surface of said first conductor layer whose surface has been processed into a fine irregularly or regularly grooved surface, said second conductor layer being composed of a material having a melting point equal to or lower than that of said first conductor layer and having the same crystal system as said first conductor layer; heating said semiconductor substrate having said second conductive body layer coated thereon thereby to recrystallize said second conductor layer; and processing said laminated conductor layers into an electrode line.
Claim 42
Dependent Claim
28 words
A method of manufacturing a semiconductor device according to claim 30, wherein said first conductor layer is made of a material whose resistivity is 200 µΩ·cm or less.
Claim 43
Dependent Claim
34 words
A method of manufacturing a semiconductor device according to claim 30, wherein said fine irregular or regular groove formed on the surface of said first conductor layer is rectangular, triangle, or trapezoidal in section.
Claim 44
Dependent Claim
101 words
In a method of manufacturing a semiconductor device having a single crystal line or a single crystal line layer or a polycrystalline line or a polycrystalline line layer, said method comprising the steps of: giving an energy mechanically to evaporated film forming material vapor so that said evaporated film forming material vapor can be dissolved into a single atom; and depositing said dissolved single atom on the line forming surface of said semiconductor substrate thereby to form a single crystal metal film or a highly orientated metal film, when forming said metal film for forming said lines or said line layers.
Claim 45
Dependent Claim
101 words
In a method of manufacturing a semiconductor device having a single crystal line or a single crystal line layer or a polycrystalline line or a polycrystalline line layer, said method comprising the steps of: giving an energy mechanically to evaporated film forming material vapor so that said evaporated film forming material vapor can be dissolved into a single atom; and depositing said dissolved single atom on the line forming surface of said semiconductor substrate thereby to form a single crystal metal film or a highly orientated metal film, when forming said metal film for forming said lines or said line layers.
Claim 46
Dependent Claim
102 words
In a method of manufacturing a semiconductor device having a single crystal line or a single crystal line layer or a polycrystalline line or a polycrystalline line layer, said method comprising the steps of: giving an electric discharge energy to evaporated film forming material vapor so that said evaporated film forming material vapor can be dissolved into a single atom; and depositing said dissolved single atom on the line forming surface of said semiconductor substrate thereby to form a single crystal metal film or a highly orientated metal film, when forming said metal film for forming said lines or said line layers.
Claim 47
Dependent Claim
102 words
In a method of manufacturing a semiconductor device having a single crystal line or a single crystal line layer or a polycrystalline line or a polycrystalline line layer, said method comprising the steps of: giving an electric discharge energy to evaporated film forming material vapor so that said evaporated film forming material vapor can be dissolved into a single atom; and depositing said dissolved single atom on the line forming surface of said semiconductor substrate thereby to form a single crystal metal film or a highly orientated metal film, when forming said metal film for forming said lines or said line layers.
Claim 48
Dependent Claim
86 words
In a method of manufacturing a semiconductor device having a single crystal line or a single crystal line layer or a polycrystalline line or a polycrystalline line layer, said method comprising the steps of: providing a cyclic charging potential to an insulating layer formed on a semiconductor substrate; and depositing evaporated film forming material vapor on said insulating layer thereby to form a single crystal metal film or a highly orientated metal film, when forming said metal film for forming said lines or said line layers.
Claim 49
Dependent Claim
86 words
In a method of manufacturing a semiconductor device having a single crystal line or a single crystal line layer or a polycrystalline line or a polycrystalline line layer, said method comprising the steps of: providing a cyclic charging potential to an insulating layer formed on a semiconductor substrate; and depositing evaporated film forming material vapor on said insulating layer thereby to form a single crystal metal film or a highly orientated metal film, when forming said metal film for forming said lines or said line layers.
References Cited (Backward Citations)
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