US5266526A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming trench buried wiring for semiconductor device
Assignee: Toshiba Corp
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Filing: 1992-03-19
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Granted: 1993-11-30
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Expires: 2012-03-19
Abstract
Abstract A method of forming a trench buried wiring on a semiconductor device. The method includes the steps of: forming a trench in a first insulating film formed on a semiconductor substrate, by using as a mask a photoresist layer, the trench having substantially an upright step; depositing a first electrode material on the surface of the photoresist layer and on the bottom of the trench, while leaving the photoresist layer; removing the photoresist layer and the first electrode material on the photoresist layer while leaving the first electrode material only on the bottom of the trench; and filling a second electrode material in the trench to form a composite electrode with the second electrode material being superposed on the first electrode material.
Inventors
- 👤 Masaharu Aoyama
- 👤 Masahiro Abe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:53
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/058; H10W20/021; Y; Y10; Y10S; Y10S148/00; Y10S148/10
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
249 words
A method of forming a trench buried wiring on a semiconductor device, comprising: a first step of depositing a first insulating film on an intermediate semiconductor device, said intermediate semiconductor device having a layer formed on a semiconductor substrate, said layer having a first opening extending to the surface of said substrate, and said first insulating film being deposited on the surface of said layer and buried in said first opening; a second step of forming a photoresist layer on said first insulating film, and patterning said photoresist layer to form a photoresist mask, said photoresist mask having a second opening above said first opening; a third step of anisotropically etching said first insulating film using said photoresist mask to form a third opening in said first insulating film, said third opening extending to the surface of said substrate via said first opening, and said first insulating film leaving as a side wall on the inner wall of said first opening; a fourth step of depositing a first electrode material on said photoresist mask and on the bottom of said substrate exposed in said first opening; a fifth step of removing said photoresist mask and said first electrode material on said photoresist mask, said first electrode material being left only in said first opening as a first electrode; and a sixth step of burying a second electrode material in said first to third openings to form a composite electrode with a second electrode being laid over said first electrode.
Claim 2
Independent Claim
249 words
A method of forming a trench buried wiring on a semiconductor device, comprising: a first step of depositing a first insulating film on an intermediate semiconductor device, said intermediate semiconductor device having a layer formed on a semiconductor substrate, said layer having a first opening extending to the surface of said substrate, and said first insulating film being deposited on the surface of said layer and buried in said first opening; a second step of forming a photoresist layer on said first insulating film, and patterning said photoresist layer to form a photoresist mask, said photoresist mask having a second opening above said first opening; a third step of anisotropically etching said first insulating film using said photoresist mask to form a third opening in said first insulating film, said third opening extending to the surface of said substrate via said first opening, and said first insulating film leaving as a side wall on the inner wall of said first opening; a fourth step of depositing a first electrode material on said photoresist mask and on the bottom of said substrate exposed in said first opening; a fifth step of removing said photoresist mask and said first electrode material on said photoresist mask, said first electrode material being left only in said first opening as a first electrode; and a sixth step of burying a second electrode material in said first to third openings to form a composite electrode with a second electrode being laid over said first electrode.
Claim 3
Dependent Claim
42 words
A method according to claim 1, wherein said first electrode material is a material made of at least one material selected from the group consisting of Ti, Ta, W, Pt, Pd, silicide or nitride thereof, and said second electrode material is Cu.
Claim 4
Dependent Claim
25 words
A method according to claim 2, wherein said first electrode material has a two-layer structure including a lower Ti layer and a higher Pt layer.
Claim 5
Dependent Claim
24 words
A method according to claim 3, wherein said Ti film and said Pt film are formed by means of an electron beam evaporation method.
Claim 6
Dependent Claim
46 words
A method according to claim 4, wherein forming said second electrode material in said sixth step is performed by a step of plating said second electrode material on said first electrode material, and by a step of growing said second electrode material on said plated layer.
Claim 7
Dependent Claim
46 words
A method according to claim 3, wherein forming said second electrode material in said sixth step is performed by a step of plating said second electrode material on said first electrode material, and by a step of growing said second electrode material on said plated layer.
Claim 8
Dependent Claim
46 words
A method according to claim 2, wherein forming said second electrode material in said sixth step is performed by a step of plating said second electrode material on said first electrode material, and by a step of growing said second electrode material on said plated layer.
Claim 9
Dependent Claim
46 words
A method according to claim 1, wherein forming said second electrode material in said sixth step is performed by a step of plating said second electrode material on said first electrode material, and by a step of growing said second electrode material on said plated layer.
Claim 10
Independent Claim
230 words
A method of forming a trench buried wiring on a semiconductor device, comprising: a first step of depositing a first insulating film on an intermediate semiconductor device, said intermediate semiconductor device having a layer formed on a semiconductor substrate, said layer having a first opening extending to the surface of said substrate, said first insulating film being deposited on the surface of said layer and buried in said first opening; a second step of forming a photoresist layer on said first insulating film, and patterning said photoresist layer to form a photoresist mask, said photoresist mask having a second opening above said first opening; a third step of anisotropically etching said first insulating film using said photoresist mask to form a third opening in said first insulating film, said third opening extending to the surface of said substrate via said first opening; a fourth step of depositing a first electrode material on said photoresist mask and on the bottom of said substrate exposed in said first opening; a fifth step of removing said photoresist mask and said first electrode material on said photoresist mask, said first electrode material being left only in said first opening as a first electrode; and a sixth step of burying a second electrode material in said first to third openings to form a composite electrode with a second electrode being laid over said first electrode.
Claim 11
Independent Claim
230 words
A method of forming a trench buried wiring on a semiconductor device, comprising: a first step of depositing a first insulating film on an intermediate semiconductor device, said intermediate semiconductor device having a layer formed on a semiconductor substrate, said layer having a first opening extending to the surface of said substrate, said first insulating film being deposited on the surface of said layer and buried in said first opening; a second step of forming a photoresist layer on said first insulating film, and patterning said photoresist layer to form a photoresist mask, said photoresist mask having a second opening above said first opening; a third step of anisotropically etching said first insulating film using said photoresist mask to form a third opening in said first insulating film, said third opening extending to the surface of said substrate via said first opening; a fourth step of depositing a first electrode material on said photoresist mask and on the bottom of said substrate exposed in said first opening; a fifth step of removing said photoresist mask and said first electrode material on said photoresist mask, said first electrode material being left only in said first opening as a first electrode; and a sixth step of burying a second electrode material in said first to third openings to form a composite electrode with a second electrode being laid over said first electrode.
Claim 12
Dependent Claim
34 words
A method according to claim 9, wherein said first electrode material is material made of at least one material selected from the group consisting of Ti, Ta, W, Pt, Pd, silicide or nitride thereof.
Claim 13
Dependent Claim
25 words
A method according to claim 10, wherein said first electrode material has a two-layer structure including a lower Ti layer and an upper Pt layer.
Claim 14
Dependent Claim
24 words
A method according to claim 11, wherein said Ti film and said Pt film are formed by means of an electron beam evaporation method.
Claim 15
Dependent Claim
46 words
A method according to claim 12, wherein forming said second electrode material in said sixth step is performed by a step of plating said second electrode material on said first electrode material, and by a step of growing said second electrode material on said plated layer.
Claim 16
Dependent Claim
46 words
A method according to claim 11, wherein forming said second electrode material in said sixth step is performed by a step of plating said second electrode material on said first electrode material, and by a step of growing said second electrode material on said plated layer.
Claim 17
Dependent Claim
13 words
A method according to claim 10, wherein said second electrode material is Cu.
Claim 18
Dependent Claim
46 words
A method according to claim 9, wherein forming said second electrode material in said sixth step is performed by a step of plating said second electrode material on said first electrode material, and by a step of growing said second electrode material on said plated layer.
Claim 19
Dependent Claim
46 words
A method according to claim 9, wherein forming said second electrode material in said sixth step is performed by a step of plating said second electrode material on said first electrode material, and by a step of growing said second electrode material on said plated layer.
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