Semiconductor device

Abstract

Abstract PURPOSE:To provide the advantages of Al and Al alloy and the advantages of Cu together by constituting an electrode wiring layer with a Cu layer and an Al layer or an Al alloy layer covering the surface of the Cu layer. CONSTITUTION:A contact hole 3 is formed in an insulating film 2 on an Si substrate 1. Pt, Ti or the like is deposited on the bottom surface of the hole. Thereafter, heat treatment is performed, and a silicide layer such as PtSi and TiSi2 is formed. TiN, Ti-W alloy and the like are deposited on the contact hole 3 and the insulating film 2, and a barrier layer 6 is formed. Then, a Cu layer 7 is formed on the barrier layer 6. An Al layer 18 is formed. A patterning mask 19 is further formed thereon. The Al layer 18, the Cu layer 7 and the barrier layer 6 are etched. Thereafter, the mask material 19 is removed. In this way, the advantages of Cu, i. e., hillock resistance, electromigration resistance and stress migration resistance, and the advantages of Al or Al alloy, i.e., wirebonding property, oxidation resistance and adhesion with an insulating film, can be provided together.

Inventors

• 👤 Tatsuro Okamoto
• 👤 岡本　龍郎

Bibliographic Details