US6166411A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Heat removal from SOI devices by using metal substrates
Assignee: GlobalFoundries Inc
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Filing: 1999-10-25
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Granted: 2000-12-26
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Expires: 2019-10-25
Abstract
Abstract In one embodiment, the present invention relates to a method of forming a silicon-on-insulator substrate involving providing a metal wafer; forming a low melting point oxide layer over the metal wafer; forming a first insulation layer over the low melting point oxide layer to provide a first structure; providing a second structure comprising a silicon layer and a second insulation layer; bonding the first structure and the second structure together so that the first insulation layer is adjacent the second insulation layer forming a buried insulation layer; and removing a portion of the silicon layer thereby providing the silicon-on-insulator substrate comprising a silicon device layer, the buried insulation layer, the low melting point oxide layer, and the metal wafer.
Inventors
- 👤 Matthew Buynoski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:17
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6758; H10W; H10W10/00; H10W10/10; H10W10/181; H10W40/00; H10W40/20; H10W40/25; H10W40/255; H10W40/258
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
150 words
A method of forming a silicon-on-insulator substrate, comprising: providing a metal wafer comprising at least one of Alloy 42, Alloy 46, Alloy 48, KOVAR®, and Invar 36; forming a low melting point oxide layer over the metal wafer, wherein the low melting point oxide layer comprises at least one of Pb doped glass, PbZr doped glass, tetratehylorthosilicate, borophosphotetraethylorthosilicate, phosphosilicate glass, and borophosphosilicate glass; forming a first insulation layer over the low melting point oxide layer to provide a first structure; providing a second structure comprising a silicon layer and a second insulation layer; bonding the first structure and the second structure together so that the first insulation layer is adjacent the second insulation layer forming a buried insulation layer; and removing a portion of the silicon layer thereby providing the silicon-on-insulator substrate comprising a silicon device layer, the buried insulation layer, the low melting point layer, and the metal wafer.
Claim 2
Independent Claim
150 words
A method of forming a silicon-on-insulator substrate, comprising: providing a metal wafer comprising at least one of Alloy 42, Alloy 46, Alloy 48, KOVAR®, and Invar 36; forming a low melting point oxide layer over the metal wafer, wherein the low melting point oxide layer comprises at least one of Pb doped glass, PbZr doped glass, tetratehylorthosilicate, borophosphotetraethylorthosilicate, phosphosilicate glass, and borophosphosilicate glass; forming a first insulation layer over the low melting point oxide layer to provide a first structure; providing a second structure comprising a silicon layer and a second insulation layer; bonding the first structure and the second structure together so that the first insulation layer is adjacent the second insulation layer forming a buried insulation layer; and removing a portion of the silicon layer thereby providing the silicon-on-insulator substrate comprising a silicon device layer, the buried insulation layer, the low melting point layer, and the metal wafer.
Claim 3
Dependent Claim
23 words
The method of claim 1, wherein the low melting point oxide layer has a thickness from about 250 Å to about 2,000 Å.
Claim 4
Dependent Claim
23 words
The method of claim 1, wherein the low melting point oxide layer has a thickness from about 300 Å to about 1,500 Å.
Claim 5
Dependent Claim
22 words
The method of claim 1, wherein at least one of the first insulation layer and the second insulation layer comprise silicon dioxide.
Claim 6
Dependent Claim
27 words
The method of claim 1, wherein the metal wafer has a thermal coefficient of expansion from about 2×10 -6 cm/cm/° C. to about 8×10 -6 cm/cm/° C.
Claim 7
Dependent Claim
72 words
A silicon-on-insulator substrate, comprising: a metal wafer layer comprising at least one of Alloy 42, Alloy 46, Alloy 48, KOVAR®, and Invar 36; a low melting point oxide layer comprising at least one of tetraethylorthosilicate, PbZr doped glass, borophosphotetraethylorthosilicate, phosphosilicate glass, and borophosphosilicate glass over the metal wafer layer; a buried insulation layer over the low melting point oxide layer; and a silicon device layer comprising silicon over the buried insulation layer.
Claim 8
Dependent Claim
72 words
A silicon-on-insulator substrate, comprising: a metal wafer layer comprising at least one of Alloy 42, Alloy 46, Alloy 48, KOVAR®, and Invar 36; a low melting point oxide layer comprising at least one of tetraethylorthosilicate, PbZr doped glass, borophosphotetraethylorthosilicate, phosphosilicate glass, and borophosphosilicate glass over the metal wafer layer; a buried insulation layer over the low melting point oxide layer; and a silicon device layer comprising silicon over the buried insulation layer.
Claim 9
Dependent Claim
54 words
The silicon-on-insulator substrate of claim 6, wherein the low melting point oxide layer has a thickness from about 250 Å to about 2,000 Å, the buried insulation layer has a thickness from about 50 Å to about 5,000 Å, and the device layer has a thickness from about 500 Å to about 5,000 Å.
Claim 10
Dependent Claim
53 words
The silicon-on-insulator substrate of claim 6, wherein the low melting point oxide layer has a thickness from about 300 Å to about 1,500 Å, the buried insulation layer has a thickness from about 50 Å to about 5,000 Å, the device layer has a thickness from about 500 Å to about 5,000 Å.
Claim 11
Dependent Claim
25 words
The silicon-on-insulator substrate of claim 6, wherein the low melting point oxide layer comprises at least one of PbZr doped glass, borophosphotetraethylorthosilicate and borophosphosilicate glass.
Claim 12
Dependent Claim
14 words
The silicon-on-insulator substrate of claim 6, wherein the buried insulation layer comprises silicon dioxide.
Claim 13
Dependent Claim
29 words
The silicon-on-insulator substrate of claim 6, wherein the metal wafer layer has a thermal coefficient of expansion from about 1×10 -6 cm/cm/° C. to about 9×10 -6 cm/cm/° C.
Claim 14
Dependent Claim
31 words
The silicon-on-insulator substrate of claim 6, wherein the low melting point oxide layer has a thickness that is at least about 60% smaller than a thickness of the buried insulation layer.
References Cited (Backward Citations)
US5126820A
Cited
US5308594A
Cited
US5194933A
Cited
US5234535A
Cited
US5446959A
Cited
US5567629A
Cited
US5463241A
Cited
US5488004A
Cited
US5855693A
Cited
US5874777A
Cited
US5744410A
Cited
US5780900A
Cited
US5770881A
Cited
US5744865A
Cited
US6100165A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-26 | 2004-06-26 | 2004-12-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-26 | 2008-06-26 | 2008-12-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-26 | 2012-06-26 | 2012-12-26 | $7700.00 | Window Closed / Lapsed |