US5874777A — Semiconductor device with enhanced thermal conduc…

Claim 1

Independent Claim 86 words

A semiconductor device having multi-layered low-resistance wiring lines laminated on one of a top surface and bottom surface of a conductive substrate with a first dielectric material being sandwiched between adjacent layers thereof, said semiconductor device comprising: said first dielectric material between said low-resistance wiring layers having a through-hole formed therein; said through-hole having a hole (through-hole: TH) filled with at least a conductive material, and a hole (dummy hole: DH) filled with a second dielectric material greater in thermal conductivity than said first dielectric material.

Claim 2

Dependent Claim 86 words

A semiconductor device having multi-layered low-resistance wiring lines laminated on one of a top surface and bottom surface of a conductive substrate with a first dielectric material being sandwiched between adjacent layers thereof, said semiconductor device comprising: said first dielectric material between said low-resistance wiring layers having a through-hole formed therein; said through-hole having a hole (through-hole: TH) filled with at least a conductive material, and a hole (dummy hole: DH) filled with a second dielectric material greater in thermal conductivity than said first dielectric material.

Claim 3

Dependent Claim 90 words

A semiconductor device having multi-layered low-resistance wiring lines laminated on one of a top surface and bottom surface of a conductive substrate with a first dielectric material being sandwiched between adjacent layers thereof, said semiconductor device comprising: said first dielectric material between said low-resistance wiring layer and said conductive substrate having a through-hole formed therein; said through-hole comprising a hole (through-hole: TH) filled with at least a conductive material, and a hole (dummy hole: DH) filled with a second dielectric material greater in thermal conductivity than said first dielectric material.

Claim 4

Dependent Claim 90 words

A semiconductor device having multi-layered low-resistance wiring lines laminated on one of a top surface and bottom surface of a conductive substrate with a first dielectric material being sandwiched between adjacent layers thereof, said semiconductor device comprising: said first dielectric material between said low-resistance wiring layer and said conductive substrate having a through-hole formed therein; said through-hole comprising a hole (through-hole: TH) filled with at least a conductive material, and a hole (dummy hole: DH) filled with a second dielectric material greater in thermal conductivity than said first dielectric material.

Claim 5

Dependent Claim 136 words

A semiconductor device having multi-layered low-resistance wiring lines laminated on one of a top surface and bottom surface of a conductive substrate with a first dielectric material being sandwiched between adjacent layers thereof, said semiconductor device comprising: a heat release device provided through said first dielectric material on the surface of a low-resistance wiring line positioned on the uppermost layer of said low-resistance wiring lines; and said first dielectric material laid between the low-resistance wiring line positioned at the uppermost layer of said low-resistance wiring lines and said heat release device having a through-hole formed therein, and that said through-hole consists of a hole (through-hole: TH) filled with at least a conductive material and a hole (dummy-hole: DH) filled with a second dielectric material having a thermal conductivity greater than that of said first dielectric material.

Claim 6

Dependent Claim 136 words

A semiconductor device having multi-layered low-resistance wiring lines laminated on one of a top surface and bottom surface of a conductive substrate with a first dielectric material being sandwiched between adjacent layers thereof, said semiconductor device comprising: a heat release device provided through said first dielectric material on the surface of a low-resistance wiring line positioned on the uppermost layer of said low-resistance wiring lines; and said first dielectric material laid between the low-resistance wiring line positioned at the uppermost layer of said low-resistance wiring lines and said heat release device having a through-hole formed therein, and that said through-hole consists of a hole (through-hole: TH) filled with at least a conductive material and a hole (dummy-hole: DH) filled with a second dielectric material having a thermal conductivity greater than that of said first dielectric material.

Claim 7

Dependent Claim 13 words

The semiconductor device of claim 1 in which said conductive substrate is metal.

Claim 8

Dependent Claim 13 words

The semiconductor device of claim 1 in which said conductive substrate is semiconductor.

Claim 9

Dependent Claim 19 words

The semiconductor device of claim 1 in which said conductive substrate is an insulator coated by a semiconductor film.

Claim 10

Dependent Claim 27 words

The semiconductor device of claim 1 in which said conductive substrate is metal and coated by a dielectric film, and further coated by a semiconductor film thereon.

Claim 11

Dependent Claim 42 words

The semiconductor device of claim 1 in which said first dielectric material is from the group consisting of SiO 2 , Si 3 N 4 , or a multi-layered film of SiO 2 and Si 3 N 4 , or combination thereof.

Claim 12

Dependent Claim 25 words

The semiconductor device of claim 1 in which said first dielectric material is a polymer material less in relative dielectric constant than SiO 2 .

Claim 13

Dependent Claim 43 words

The semiconductor device as in claim 1 in which said first dielectric material is from the group consisting of AlN, a multi-layered film of AlN and SiO 2 or Si 3 N 4 , or a multi-layered film of AlN and polymer material.

Claim 14

Dependent Claim 38 words

The semiconductor device as in claim 1 in which said first dielectric material is one of a polymer material and silicon oxide, wherein said wiring line surface is coated by a third dielectric material with enhanced mechanical strength.

Claim 15

Dependent Claim 65 words

The semiconductor device as in claim 1 in which said first dielectric material is one of polymer material and silicon oxide, wherein said wiring line surface is coated by a silicide or oxide of a metal constituting said wiring line or its alloy component, and that the surface of said silicide or oxide is further coated by a third dielectric material with increased mechanical strength.

Claim 16

Dependent Claim 35 words

The semiconductor device of claim 12 in which said first dielectric material is polymer material or silicon oxide, in that the metal line surface is coated by a fourth dielectric material with enhanced thermal conductivity.

Claim 17

Dependent Claim 66 words

The semiconductor device of claim 12 in which said first dielectric material is one of a polymer material and silicon oxide, wherein said wiring line surface is coated by a fourth dielectric material being greater in thickness that said wiring lines and better in thermal conductivity, and that the surface of said fourth dielectric material is so formed as to resemble in shape a planar structure.

Claim 18

Dependent Claim 102 words

The semiconductor device of as in any of claims 13 in which said first dielectric material is SiO 2 , and has a (TH+DH) ratio given as: (TH+DH) ratio: 100×(β+γ)/α=2, where α is the value of wiring line length L of said low-resistance wiring lines as divided by the wiring line pitch P, β is the number of said through-holes (through-holes: TH) filled with the conductive material in said wiring length L, and γ is the number of through-holes (dummy-holes: DH) filled with the second dielectric material greater in thermal conductivity than said first dielectric material in said wiring line length L.

Claim 19

Dependent Claim 104 words

The semiconductor device as any of claims 1-3 in which said first dielectric material is polyimide-based resin or Teflon-based resin, and has a (TH+DH) ratio given as (TH+DH) ratio: 100×(β+γ)/α=3, where α is the value of wiring length line L of said low-resistance wiring lines as divided by the wiring line pitch P, β is the number of said through-holes (through-holes: TH) filled with the conductive material in said wiring ling length L, and γ is the number of through-holes (dummy-holes: DH) filled with the second dielectric material greater in thermal conductivity than the said first dielectric material in said wiring line length L.

Claim 20

Dependent Claim 111 words

The semiconductor device of any of claims 1-3 in which a material less in relative dielectric constant than polyimide-based resin or Teflon-based resin is used as said first dielectric material, the (TH+DH) ratio given as (TH+DH) ratio: 100×(γ+γ)/α>3, where α is the value of wiring line length L of said low-resistance wiring lines as divided by the wiring line pitch P, β is the number of said through-holes (through-holes: TH) filled with the conductive material in said wiring line length L, and γ is the number of through-holes (dummy-holes: DH) filled with the second dielectric material greater in thermal conductivity than said first dielectric material in said wiring line length L.

Claim 21

Dependent Claim 19 words

The semiconductor device as in any of claims 1-3 in which said second dielectric material is aluminum nitride (AlN).

Claim 22

Dependent Claim 33 words

The semiconductor device of claim 1 in which said second dielectric material is formed by the CVD method using as original materials a gaseous compound containing aluminum and a gaseous compound containing nitride.

Claim 23

Dependent Claim 75 words

The semiconductor device of claim 19 wherein said gaseous compound containing aluminum is one selected from the group consisting of aluminum hydroxide (AlH 3 ) dimethyl aluminum hydride (Al(CH 3 ) 2 H), trimethyl aluminum (Al(CH 3 ) 3 ), triethyl aluminum (Al(C 2 H 5 ) 3 ), triisobuthyl aluminum (Al(i--C 4 H 9 ) 3 ), methyl aluminum dihydride (Al(CH 3 )H 2 ), and trimethylaminealane (AlH 3 N(CH 3 ) 3 ).

Claim 24

Dependent Claim 50 words

The semiconductor device of claim 19, wherein said gaseous compound containing nitride is one selected from the group consisting of nitrogen trichloride (NCl 3 ), nitrogen trifluoride (HF 3 ), dinitrogen monoxide (N 2 O), nitrogen monoxide (NO), dinitrogen trioxide (N 2 O 3 ), and ammonia (NH 3 ).

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2002-02-22	2002-08-24	2003-02-23	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2006-02-22	2006-08-24	2007-02-23	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2010-02-22	2010-08-24	2011-02-23	$7700.00	Window Closed / Lapsed

Semiconductor device with enhanced thermal conductivity

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