Reliability of metal leads in high speed LSI semiconductors using dummy vias

Claim 1

A semiconductor device having metal leads with improved reliability, comprising: a substrate; at least two metal leads on said substrate; a first insulating layer comprising a low-dielectric constant material between said metal leads, said low-dielectric constant material having a dielectric constant of less than about 3.5; a second insulating layer in contact with at least said first insulating layer; first dummy vias formed within said second inflating layer in contact with said metal leads, wherein heat from said metal leads is transferable to said first dummy vias, and wherein said first dummy vias are capable of conducting said heat away from said metal leads; first dummy leads in contact with said first dummy vias, wherein heat from said metal leads is transferable to said first dummy leads, and wherein said first dummy leads are capable of conducting said heat away from said metal leads; and second dummy vias in contact with said first dummy leads, wherein heat from said metal leads is transferable to said second dummy leads, and wherein said second dummy vias are capable of conducting said heat away from said metal leads; wherein said second insulating layer is comprised of a thermoconductive material comprising A1N, Si 3 N 4 , or both.