US6100165A
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US
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Method of manufacturing semiconductor article
Assignee: Canon Inc
•
Filing: 1997-11-14
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Granted: 2000-08-08
•
Expires: 2017-11-14
Abstract
Abstract A method of manufacturing a semiconductor article comprises steps of forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type, forming a porous silicon layer in a region including the diffusion region, preparing a first substrate by forming a nonporous semiconductor layer on the porous silicon layer, bonding the first substrate and a second substrate together to produce a multilayer structure with the nonporous semiconductor layer located inside, splitting the multilayer structure along the porous silicon layer but not along the diffusion region and removing the porous silicon layer remaining on the split second substrate.
Inventors
- 👤 Kiyofumi Sakaguchi
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 01:41
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1924; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/928; Y10S438/96; Y10S438/977
Claims Analysis
Total Claims: 61
Claim 1
Independent Claim
115 words
A method of manufacturing a semiconductor article, characterized by comprising steps of: forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type; forming a porous silicon layer in a region including said diffusion region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer but not along said diffusion region; and removing the porous silicon layer remaining on said split second substrate.
Claim 2
Independent Claim
115 words
A method of manufacturing a semiconductor article, characterized by comprising steps of: forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type; forming a porous silicon layer in a region including said diffusion region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer but not along said diffusion region; and removing the porous silicon layer remaining on said split second substrate.
Claim 3
Dependent Claim
27 words
A method of manufacturing a semiconductor article according to claim 1, wherein said step of forming a diffusion region is performed by means of a diffusion technique.
Claim 4
Dependent Claim
34 words
A method of manufacturing a semiconductor article according to claim 2, wherein said element capable of controlling the conduction type is an element capable of controlling the conduction type of silicon to the n-type.
Claim 5
Dependent Claim
27 words
A method of manufacturing a semiconductor article according to claim 3, wherein said element capable of controlling the conduction type is selected from P, As and Sb.
Claim 6
Dependent Claim
34 words
A method of manufacturing a semiconductor article according to claim 2, wherein said element capable of controlling the conduction type is an element capable of controlling the conduction type of silicon to the p-type.
Claim 7
Dependent Claim
22 words
A method of manufacturing a semiconductor article according to claim 5, wherein said element capable of controlling the conduction type is B.
Claim 8
Dependent Claim
26 words
A method of manufacturing a semiconductor article according to claim 2, wherein said diffusion technique is adapted to thermally diffuse said element into said silicon substrate.
Claim 9
Dependent Claim
27 words
A method of manufacturing a semiconductor article according to claim 6, wherein said element capable of controlling the conduction type is supplied in the form of gas.
Claim 10
Dependent Claim
20 words
A method of manufacturing a semiconductor article according to claim 8, wherein said gas is B 2 H 6 .
Claim 11
Dependent Claim
27 words
A method of manufacturing a semiconductor article according to claim 6, wherein said element capable of controlling the conduction type is supplied in the form of liquid.
Claim 12
Dependent Claim
18 words
A method of manufacturing a semiconductor article according to claim 10, wherein said liquid is BBr 3 .
Claim 13
Dependent Claim
27 words
A method of manufacturing a semiconductor article according to claim 6, wherein said element capable of controlling the conduction type is supplied in the form of solid.
Claim 14
Dependent Claim
20 words
A method of manufacturing a semiconductor article according to claim 12, wherein said solid is B 2 O 3 .
Claim 15
Dependent Claim
31 words
A method of manufacturing a semiconductor article according to claim 6, wherein said element capable of controlling the conduction type is supplied from a solid object arranged on said silicon substrate.
Claim 16
Dependent Claim
24 words
A method of manufacturing a semiconductor article according to claim 14, wherein said solid object is selected from CVD film, BSG and spin-coated film.
Claim 17
Dependent Claim
46 words
A method of manufacturing a semiconductor article according to claim 2, wherein the concentration of said element capable of controlling the conduction type and contained i n said diffusion region is controlled within a range between 5.0×10 16 /cm 3 and 5.0×10 20 /cm 3 .
Claim 18
Dependent Claim
45 words
A method of manufacturing a semiconductor article according to claim 16, wherein the concentration of said element capable of controlling the conduction type and contained in said diffusion region is controlled within a range between 1.0×10 17 /cm 3 and 2.0×10 20 /cm 3 .
Claim 19
Dependent Claim
45 words
A method of manufacturing a semiconductor article according to claim 17, wherein the concentration of said element capable of controlling the conduction type and contained in said diffusion region is controlled within a range between 5.0×10 17 /cm 3 and 1.0×10 20 /cm 3 .
Claim 20
Dependent Claim
29 words
A method of manufacturing a semiconductor article according to claim 2, wherein the thickness of said diffusion layer is controlled within a range between 100 Å and 100 μm.
Claim 21
Dependent Claim
29 words
A method of manufacturing a semiconductor article according to claim 19, wherein the thickness of said diffusion layer is controlled within a range between 500 Å and 50 μm.
Claim 22
Dependent Claim
29 words
A method of manufacturing a semiconductor article according to claim 20, wherein the thickness of said diffusion layer is controlled within a range between 5,000 Å and 30 μm.
Claim 23
Dependent Claim
30 words
A method of manufacturing a semiconductor article according to claim 1, wherein the thickness of said porous silicon layer is controlled within a range between 1 μm and 150 μm.
Claim 24
Dependent Claim
30 words
A method of manufacturing a semiconductor article according to claim 22, wherein the thickness of said porous silicon layer is controlled within a range between 2 μm and 80 μm.
Claim 25
Dependent Claim
30 words
A method of manufacturing a semiconductor article according to claim 23, wherein the thickness of said porous silicon layer is controlled within a range between 5 μm and 50 μm.
Claim 26
Dependent Claim
47 words
A method of manufacturing a semiconductor article according to claim 1, wherein a diffusion region and a porous layer are formed on each of the oppositely disposed surfaces of said silicon substrate a nd subsequently a nonporous semiconductor layer is formed on each of said porous layers.
Claim 27
Dependent Claim
30 words
A met hod of manufacturing a semiconductor article according to claim 1, wherein said step of splitting said multilayer structure is performed by externally applying force to said porous layer.
Claim 28
Dependent Claim
34 words
A method of manufacturing a semiconductor article according to claim 26, wherein said application of force is performed by applying pressure, tensile force in a direction perpendicular to the substrate surface or shearing force.
Claim 29
Dependent Claim
38 words
A method of manufacturing a semiconductor article according to claim 1, wherein said step of splitting said multilayer structure is performed by exposing the porous silicon at an end of the structure and subsequently oxidizing the bonded substrates.
Claim 30
Dependent Claim
26 words
A method of manufacturing a semiconductor article according to claim 1, wherein said step of splitting said multilayer structure is performed by heating said multilayer structure.
Claim 31
Dependent Claim
23 words
A method of manufacturing a semiconductor article according to claim 29, wherein said heating is performed by entirely heating said porous multilayer structure.
Claim 32
Dependent Claim
22 words
A method of manufacturing a semiconductor article according to claim 29, wherein said heating is performed by partly heating said multilayer structure.
Claim 33
Dependent Claim
21 words
A method of manufacturing a semiconductor article according to claim 31, wherein said heating is performed by means of laser irradiation.
Claim 34
Dependent Claim
18 words
A method of manufacturing a semiconductor article according to claim 32, wherein said laser is carbon dioxide laser.
Claim 35
Dependent Claim
26 words
A method of manufacturing a semiconductor article according to claim 31, wherein said heating is performed by flowing an electric current through said porous silicon layer.
Claim 36
Dependent Claim
23 words
A method of manufacturing a semiconductor article according to claim 1, wherein said porous silicon layer is obtained by anodizing said silicon substrate.
Claim 37
Dependent Claim
22 words
A method of manufacturing a semiconductor article according to claim 1, wherein said nonporous semiconductor layer comprises a single crystal silicon layer.
Claim 38
Dependent Claim
24 words
A method of manufacturing a semiconductor article according to claim 36, wherein said single crystal silicon layer is formed by means of epitaxial growth.
Claim 39
Dependent Claim
29 words
A method of manufacturing a semiconductor article according to claim 36, wherein said first substrate is prepared by forming a silicon oxide layer on said single crystal silicon layer.
Claim 40
Dependent Claim
23 words
A method of manufacturing a semiconductor article according to claim 38, wherein said silicon oxide layer is formed by means of thermal oxidation.
Claim 41
Dependent Claim
21 words
A method of manufacturing a semiconductor article according to claim 1, wherein said porous semiconductor layer comprises a compound semiconductor layer.
Claim 42
Dependent Claim
20 words
A method of manufacturing a semiconductor article according to claim 40, wherein said compound semiconductor layer has single crystal structure.
Claim 43
Dependent Claim
21 words
A method of manufacturing a semiconductor article according to claim 1, wherein said second substrate comprises a single crystal silicon substrate.
Claim 44
Dependent Claim
30 words
A method of manufacturing a semiconductor article according to claim 1, wherein said second substrate is prepared by forming oxide film on the surface of said single crystal silicon substrate.
Claim 45
Dependent Claim
20 words
A method of manufacturing a semiconductor article according to claim 1, wherein said second substrate comprises a light transmitting substrate.
Claim 46
Dependent Claim
20 words
A method of manufacturing a semiconductor article according to claim 44, wherein said light transmitting substrate comprises a glass substrate.
Claim 47
Dependent Claim
28 words
A method of manufacturing a semiconductor article according to claim 1, wherein said bonding step is performed by bringing the two substrate into close contact with each other.
Claim 48
Dependent Claim
26 words
A method of manufacturing a semiconductor article according to claim 1, wherein said bonding step is performed by means of anodic bonding, pressurization and heat treatment.
Claim 49
Dependent Claim
26 words
A method of manufacturing a semiconductor article according to claim 1, wherein said step of removing said porous silicon layer is performed by means of polishing.
Claim 50
Dependent Claim
26 words
A method of manufacturing a semiconductor article according to claim 1, wherein said step of removing said porous silicon layer is performed by means of etching.
Claim 51
Dependent Claim
20 words
A method of manufacturing a semiconductor article according to claim 49, wherein said etching is performed by using hydrofluoric acid.
Claim 52
Independent Claim
136 words
A method of manufacturing a semiconductor article, characterized by comprising steps of: forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type; forming a porous silicon layer in a region including said diffusion region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer but not along said diffusion region; removing the porous silicon layer remaining on said split second substrate; and reusing the substrate obtained by removing the porous layer remaining on said separated first substrate as material of another first substrate.
Claim 53
Independent Claim
136 words
A method of manufacturing a semiconductor article, characterized by comprising steps of: forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type; forming a porous silicon layer in a region including said diffusion region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer but not along said diffusion region; removing the porous silicon layer remaining on said split second substrate; and reusing the substrate obtained by removing the porous layer remaining on said separated first substrate as material of another first substrate.
Claim 54
Independent Claim
136 words
A method of manufacturing a semiconductor article, characterized by comprising steps of: forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type; forming a porous silicon layer in a region including said diffusion region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer but not along said diffusion region; removing the porous silicon layer remaining on said split second substrate; and reusing the substrate obtained by removing the porous layer remaining on said separated first substrate as material of another second substrate.
Claim 55
Independent Claim
136 words
A method of manufacturing a semiconductor article, characterized by comprising steps of: forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type; forming a porous silicon layer in a region including said diffusion region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer but not along said diffusion region; removing the porous silicon layer remaining on said split second substrate; and reusing the substrate obtained by removing the porous layer remaining on said separated first substrate as material of another second substrate.
Claim 56
Independent Claim
85 words
A method of manufacturing a semiconductor article, comprising: forming a region incorporating an element capable of controlling the conduction type at least on the surface of a side of a silicon substrate; forming a porous silicon layer in said region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer.
Claim 57
Independent Claim
85 words
A method of manufacturing a semiconductor article, comprising: forming a region incorporating an element capable of controlling the conduction type at least on the surface of a side of a silicon substrate; forming a porous silicon layer in said region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer.
Claim 58
Independent Claim
87 words
A method of manufacturing a semiconductor article, comprising: forming a p-type region incorporating an element capable of controlling the conduction type at least on the surface of a side of a silicon substrate; forming a porous silicon layer in said p-type region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer.
Claim 59
Independent Claim
87 words
A method of manufacturing a semiconductor article, comprising: forming a p-type region incorporating an element capable of controlling the conduction type at least on the surface of a side of a silicon substrate; forming a porous silicon layer in said p-type region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer.
Claim 60
Independent Claim
91 words
A method of manufacturing a semiconductor article, comprising: forming a highly doped region incorporating an element capable of controlling the conduction type at least on the surface of one of the sides of a silicon substrate; forming a porous silicon layer in said highly doped region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer.
Claim 61
Independent Claim
91 words
A method of manufacturing a semiconductor article, comprising: forming a highly doped region incorporating an element capable of controlling the conduction type at least on the surface of one of the sides of a silicon substrate; forming a porous silicon layer in said highly doped region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer.
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