US6153521A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metallized interconnection structure and method of making the same
Assignee: Advanced Micro Devices Inc
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Filing: 1998-06-04
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Granted: 2000-11-28
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Expires: 2018-06-04
Abstract
Abstract A dual damascene method of fabricating an interconnection level of conductive lines and connecting vias etches a via opening in a first insulating layer. A photoresist layer that the defines the conductive wiring is deposited and patterned on the first insulating layer after the via opening has been created. The via opening and the conductive wire opening in the resist layer are then filled with the conductive material, such as copper. The resist layer may then be removed and a second insulating layer provided over the first insulating layer.
Inventors
- 👤 Robin W. Cheung
- 👤 Chiu H. Ting
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:13
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/032; H10W20/033; H10W20/038; H10W20/039; H10W20/042; H10W20/043; H10W20/055; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
107 words
A method of forming a layered conductive structure in a semiconductor device, comprising the steps of: forming an opening in a first insulating layer consisting of a self-copper diffusion barrier material; depositing a seed layer on the first insulating layer; patterning a resist layer on the seed layer to define a space in the resist layer that is located over the opening; simultaneously filling the opening in the first insulating layer and the space in the resist layer with copper to form the layered conductive structure; removing the resist layer; and depositing a second insulating layer on the first insulating layer and around the layered conductive structure.
Claim 2
Independent Claim
107 words
A method of forming a layered conductive structure in a semiconductor device, comprising the steps of: forming an opening in a first insulating layer consisting of a self-copper diffusion barrier material; depositing a seed layer on the first insulating layer; patterning a resist layer on the seed layer to define a space in the resist layer that is located over the opening; simultaneously filling the opening in the first insulating layer and the space in the resist layer with copper to form the layered conductive structure; removing the resist layer; and depositing a second insulating layer on the first insulating layer and around the layered conductive structure.
Claim 3
Dependent Claim
24 words
The method of claim 1, wherein the step of forming an opening includes masking the first insulating layer and etching the first insulating layer.
Claim 4
Dependent Claim
31 words
The method of claim 1, wherein the step of filling the opening and the space includes performing chemical vapor deposition (CVD) of the copper in the opening and in the space.
Claim 5
Dependent Claim
29 words
The method of claim 1, wherein the step of filling the opening and the space includes performing electroless deposition of the copper in the opening and in the space.
Claim 6
Dependent Claim
28 words
The method of claim 1, wherein the step of filling the opening and the space includes performing electroplating of the copper in the opening and in the space.
Claim 7
Dependent Claim
22 words
The method of claim 1, wherein the step of depositing a second insulating layer includes depositing benzocyclobutene as the second insulating layer.
Claim 8
Dependent Claim
23 words
The method of claim 1, wherein the seed layer is selected from the following group: 1% Al--Cu, 1% Mg--Cu, 1% Sn--Cu and Cu.
Claim 9
Independent Claim
190 words
A method of forming a copper wiring and a copper via on a substrate of a semiconductor device, comprising the steps of: depositing a first insulating layer consisting of a self-copper diffusion barrier material over the substrate and an etch stop layer over the first insulating layer; forming and patterning a via mask layer on the etch stop layer, the via mask layer having a via mask layer opening above the location of a desired via opening; etching through the via mask layer to remove the etch stop layer and the first insulating layer to create the via opening; depositing a seed layer in the via opening; depositing and patterning a conductive wiring mask layer over the first insulating layer such that an opening in the conductive wiring mask layer is provided over the via opening, wherein the conductive wiring mask layer consists of a photoresistive material; depositing copper in the via opening and in the conductive wiring mask layer opening to form the wiring and the via; removing the conductive wiring mask layer; and depositing a second insulating layer on the first insulating layer and around the conductive wiring.
Claim 10
Independent Claim
190 words
A method of forming a copper wiring and a copper via on a substrate of a semiconductor device, comprising the steps of: depositing a first insulating layer consisting of a self-copper diffusion barrier material over the substrate and an etch stop layer over the first insulating layer; forming and patterning a via mask layer on the etch stop layer, the via mask layer having a via mask layer opening above the location of a desired via opening; etching through the via mask layer to remove the etch stop layer and the first insulating layer to create the via opening; depositing a seed layer in the via opening; depositing and patterning a conductive wiring mask layer over the first insulating layer such that an opening in the conductive wiring mask layer is provided over the via opening, wherein the conductive wiring mask layer consists of a photoresistive material; depositing copper in the via opening and in the conductive wiring mask layer opening to form the wiring and the via; removing the conductive wiring mask layer; and depositing a second insulating layer on the first insulating layer and around the conductive wiring.
Claim 11
Dependent Claim
13 words
The method of claim 8, wherein the second insulating layer comprises benzocyclobutene (BCB).
Claim 12
Dependent Claim
18 words
The method of claim 8, wherein the step of depositing conductive material includes electroplating of the conductive material.
Claim 13
Dependent Claim
32 words
The method of claim 8, further comprising removing exposed portions of the seed layer after removing the conductive wiring mask layer and prior to the step of depositing the second insulating layer.
Claim 14
Dependent Claim
13 words
The method of claim 11, wherein the seed layer is a copper alloy.
Claim 15
Dependent Claim
22 words
The method of claim 11, further comprising the step of sintering the substrate, the first and second insulating layers and the copper.
Claim 16
Independent Claim
156 words
A method of forming a copper wiring and a copper via on a substrate of a semiconductor device, comprising the steps of: depositing a barrier layer on the substrate; depositing a first insulating layer consisting of a self-copper diffusion barrier material over the barrier layer and an etch stop layer over the first insulating layer; depositing and patterning a conductive wiring mask layer over the etch stop layer such that an opening in the conductive wiring mask layer is provided, wherein the conductive wiring mask layer consists of a photoresistive material; etching through the mask opening to remove the etch stop layer, first insulating layer, and barrier layer to create a via opening; depositing copper in the via opening and in the conductive wiring mask layer opening to form the wiring and the via; removing the conductive wiring mask layer; and depositing a second insulating layer on the first insulating layer and around the conductive wiring.
Claim 17
Independent Claim
156 words
A method of forming a copper wiring and a copper via on a substrate of a semiconductor device, comprising the steps of: depositing a barrier layer on the substrate; depositing a first insulating layer consisting of a self-copper diffusion barrier material over the barrier layer and an etch stop layer over the first insulating layer; depositing and patterning a conductive wiring mask layer over the etch stop layer such that an opening in the conductive wiring mask layer is provided, wherein the conductive wiring mask layer consists of a photoresistive material; etching through the mask opening to remove the etch stop layer, first insulating layer, and barrier layer to create a via opening; depositing copper in the via opening and in the conductive wiring mask layer opening to form the wiring and the via; removing the conductive wiring mask layer; and depositing a second insulating layer on the first insulating layer and around the conductive wiring.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-28 | 2004-05-29 | 2004-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-28 | 2008-05-29 | 2008-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-28 | 2012-05-29 | 2012-11-28 | $7700.00 | Window Closed / Lapsed |