Patent US6153495A successfully refreshed from Google Patents.
US6153495A
Expired / Lapsed
US
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Advanced methods for making semiconductor devices by low temperature direct bonding
Assignee: Fairchild Semiconductor Corp
•
Filing: 1998-03-09
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Granted: 2000-11-28
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Expires: 2018-03-09
Abstract
Abstract A method for making a semiconductor device from a plurality of semiconductor substrates includes the steps of: processing at least one surface of at least one of the substrates; thinning at least one of the substrates; bonding the processed and thinned substrates together so that the at least one processed surface defines an outer surface of the semiconductor device; and annealing the bonded together substrates at a relatively low anneal temperature so as to not adversely effect the at least one processed surface. The step of thinning preferably comprises removing a surface portion of the least one substrate opposite the processed surface, to a thickness of less than about 200 μm. A gettering layer may be formed for the at least one substrate prior to thinning. Accordingly, the step of thinning removes the gettering layer. An implanted region may be formed at a surface of the at least one substrate opposite the processed surface prior to bonding. The implanting may comprise implanting with a lifetime killing implant or a dopant. An epitaxial layer may be formed on the backside of a substrate. The step of processing may include forming a metal layer. Thus, the anneal temperature is preferably less than a temperature related to a characteristic of the metal layer. For an aluminum layer, the anneal temperature is preferably less than about 450° C. If a barrier metal is used between the aluminum and substrate, the anneal temperature may be in a range of about 450 to 550° C.
Inventors
- 👤 Francis J. Kub
- 👤 Victor Temple
- 👤 Karl Hobart
- 👤 John Neilson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 06:53
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/01; H10D12/031; H10D12/032; H10D12/038; H10D18/00; H10D18/01; H10D30/00; H10D30/01; H10D30/012; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10P; H10P10/00; H10P10/12; H10P10/128; H10D30/021; H10D30/028; H10D30/0291; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 88
Claim 1
Independent Claim
106 words
A method for making a semiconductor circuit from a plurality of semiconductor substrates, the method comprising the steps of: processing at least one surface of at least one of the substrates to form at least one active device of the semiconductor circuit; thinning at least one of the substrates; bonding the plurality of substrates together after the processing and thinning steps so that the at least one processed surface including the at least one active device defines an outer surface of the semiconductor circuit; and annealing the bonded together substrates at an anneal temperature so as to not adversely effect the at least one active device.
Claim 2
Independent Claim
106 words
A method for making a semiconductor circuit from a plurality of semiconductor substrates, the method comprising the steps of: processing at least one surface of at least one of the substrates to form at least one active device of the semiconductor circuit; thinning at least one of the substrates; bonding the plurality of substrates together after the processing and thinning steps so that the at least one processed surface including the at least one active device defines an outer surface of the semiconductor circuit; and annealing the bonded together substrates at an anneal temperature so as to not adversely effect the at least one active device.
Claim 3
Dependent Claim
25 words
A method according to claim 1 wherein the step of thinning comprises removing a surface portion of the least one substrate opposite the processed surface.
Claim 4
Dependent Claim
22 words
A method according to claim 1 wherein the step of thinning comprises thinning to a thickness of less than about 200 μm.
Claim 5
Dependent Claim
20 words
A method according to claim 1 further comprising the step of polishing the thinned surface to a predetermined surface roughness.
Claim 6
Dependent Claim
35 words
A method according to claim 1 further comprising the step of forming a gettering layer for the at least one substrate prior to thinning; and wherein the step of thinning comprises removing the gettering layer.
Claim 7
Dependent Claim
33 words
A method according to claim 5 wherein the step of forming the gettering layer comprises performing at least one of a phosphorous diffusion, an ion implantation of argon or carbon, and polysilicon deposition.
Claim 8
Dependent Claim
22 words
A method according to claim 5 wherein the step of forming the gettering layer comprises forming same prior to the processing step.
Claim 9
Dependent Claim
31 words
A method according to claim 1 further comprising the step of forming an implanted region at a surface of the at least one substrate opposite the processed surface prior to bonding.
Claim 10
Dependent Claim
18 words
A method according to claim 8 wherein the step of implanting comprises implanting with a lifetime killing implant.
Claim 11
Dependent Claim
28 words
A method according to claim 9 wherein the step of implanting comprises implanting in a predetermined pattern to define a plurality of laterally spaced lifetime killing implant regions.
Claim 12
Dependent Claim
28 words
A method according to claim 9 wherein the lifetime killing implant comprises at least one of protons, helium, carbon, oxygen, argon, silicon, platinum, palladium, gold, iron and nickel.
Claim 13
Dependent Claim
31 words
A method according to claim 1 further comprising the step of forming a doped layer at a surface of the at least one substrate opposite the processed surface prior to bonding.
Claim 14
Dependent Claim
21 words
A method according to claim 12 wherein the step of forming the doped layer comprises implanting a dopant into the surface.
Claim 15
Dependent Claim
52 words
A method according to claim 13 wherein the at least one substrate has a first conductivity type dopant; and wherein step of implanting a dopant comprises implanting a dopant of a second conductivity type into the doped layer at a concentration greater than a concentration of the first dopant in the substrate.
Claim 16
Dependent Claim
15 words
A method according to claim 14 further comprising the step of activating the implanted dopant.
Claim 17
Dependent Claim
20 words
A method according to claim 12 wherein the step of forming the doped layer comprises forming an epitaxial doped layer.
Claim 18
Dependent Claim
31 words
A method according to claim 1 further comprising the step of forming an epitaxial layer at a surface of the at least one substrate opposite the processed surface prior to bonding.
Claim 19
Dependent Claim
20 words
A method according to claim 17 wherein the at least one substrate comprises silicon and the epitaxial layer comprises germanium.
Claim 20
Dependent Claim
32 words
A method according to claim 1 wherein the step of processing comprises forming a highly doped buffer layer of a first conductivity type on a doped substrate of the first conductivity type.
Claim 21
Dependent Claim
32 words
A method according to claim 1 wherein the step of processing comprises implanting a highly doped buffer layer of a first conductivity type in a doped substrate of the first conductivity type.
Claim 22
Dependent Claim
17 words
A method according to claim 1 wherein the step of bonding is carried out in a vacuum.
Claim 23
Dependent Claim
28 words
A method according to claim 1 further comprising the step of mounting at least one of the substrates to be thinned onto a handling substrate prior to thinning.
Claim 24
Dependent Claim
17 words
A method according to claim 1 further comprising the step of aligning the substrates prior to bonding.
Claim 25
Dependent Claim
38 words
A method according to claim 23 wherein the step of aligning comprises: defining predefined corresponding portions in each substrate; cutting the substrates along the predefined portions to define cut edges; and aligning the substrates along the cut edges.
Claim 26
Dependent Claim
28 words
A method according to claim 23 further comprising the step of testing individual devices on each substrate, and aligning the substrates to increase a yield of the devices.
Claim 27
Dependent Claim
34 words
A method according to claim 1 wherein the step of processing comprises forming a metal layer; and wherein the anneal temperature is less than a temperature related to a characteristic of the metal layer.
Claim 28
Dependent Claim
27 words
A method according to claim 1 wherein the step of processing comprises forming an aluminum layer; and wherein the anneal temperature is less than about 450° C.
Claim 29
Dependent Claim
42 words
A method according to claim 1 wherein the step of processing comprises forming an aluminum layer, and forming a barrier metal between the aluminum layer and substrate; and wherein the anneal temperature is in a range of about 450 to 550° C.
Claim 30
Dependent Claim
43 words
A method according to claim 1 wherein the step of processing comprises forming at least doped region; further comprising the step of forming at least one metal layer after the annealing step; and wherein the anneal temperature is less than about 800° C.
Claim 31
Dependent Claim
16 words
A method according to claim 1 wherein the anneal temperature is greater than about 400° C.
Claim 32
Dependent Claim
17 words
A method according to claim 1 wherein the step of annealing comprises annealing for a predetermined time.
Claim 33
Dependent Claim
26 words
A method according to claim 1 wherein the substrates comprise silicon; and further comprising the step of hydrogen terminating silicon surfaces prior to the bonding step.
Claim 34
Dependent Claim
24 words
A method according to claim 1 further comprising the step of cleaning surfaces to be bonded of at least one of hydrocarbons and metals.
Claim 35
Dependent Claim
20 words
A method according to claim 1 wherein the at least one active device comprises at least one MOSFET control device.
Claim 36
Dependent Claim
22 words
A method according to claim 1 wherein the plurality of substrates is two; and wherein the processing step comprises processing both substrates.
Claim 37
Dependent Claim
26 words
A method according to claim 1 wherein the step of bonding comprises bonding at a predetermined temperature in a predetermined ambient, and with a predetermined pressure.
Claim 38
Dependent Claim
22 words
A method according to claim 1 wherein the step of annealing comprises annealing in a predetermined ambient, and with a predetermined pressure.
Claim 39
Independent Claim
126 words
A method for making a semiconductor circuit from a plurality of semiconductor substrates, the method comprising the steps of: forming a gettering layer for at least one of the substrates; processing at least one surface of at least one of the substrates to form at least one active device of the semiconductor circuit; thinning at least one of the substrates and thereby removing the at least one gettering layer; bonding the plurality of substrates together after the processing and thinning steps so that the at least one processed surface including the at least one active device defines an outer surface of the semiconductor circuit; and annealing the bonded together substrates at an anneal temperature so as to not adversely effect the at least one active device.
Claim 40
Independent Claim
126 words
A method for making a semiconductor circuit from a plurality of semiconductor substrates, the method comprising the steps of: forming a gettering layer for at least one of the substrates; processing at least one surface of at least one of the substrates to form at least one active device of the semiconductor circuit; thinning at least one of the substrates and thereby removing the at least one gettering layer; bonding the plurality of substrates together after the processing and thinning steps so that the at least one processed surface including the at least one active device defines an outer surface of the semiconductor circuit; and annealing the bonded together substrates at an anneal temperature so as to not adversely effect the at least one active device.
Claim 41
Dependent Claim
35 words
A method according to claim 38 wherein the step of forming the gettering layer comprises performing at least one of a phosphorous diffusion, an ion implantation of argon, silicon, oxygen, or carbon, and polysilicon deposition.
Claim 42
Dependent Claim
22 words
A method according to claim 39 wherein the step of forming the gettering layer comprises forming same prior to the processing step.
Claim 43
Dependent Claim
34 words
A method according to claim 38 wherein the step of processing comprises forming a metal layer; and wherein the anneal temperature is less than a temperature related to a characteristic of the metal layer.
Claim 44
Dependent Claim
27 words
A method according to claim 38 wherein the step of processing comprises forming an aluminum layer; and wherein the anneal temperature is less than about 450° C.
Claim 45
Dependent Claim
42 words
A method according to claim 38 wherein the step of processing comprises forming an aluminum layer, and forming a barrier metal between the aluminum layer and substrate; and wherein the anneal temperature is in a range of about 450 to 550° C.
Claim 46
Dependent Claim
43 words
A method according to claim 38 wherein the step of processing comprises forming at least doped region; further comprising the step of forming at least one metal layer after the annealing step; and wherein the anneal temperature is less than about 800° C.
Claim 47
Dependent Claim
16 words
A method according to claim 38 wherein the anneal temperature is greater than about 400° C.
Claim 48
Dependent Claim
26 words
A method according to claim 38 wherein the step of processing comprises completely processing the at least one substrate to form all active devices and interconnections.
Claim 49
Dependent Claim
20 words
A method according to claim 38 wherein the at least one active device comprises at least one MOSFET control device.
Claim 50
Independent Claim
115 words
A method for making a semiconductor circuit from a plurality of semiconductor substrates, the method comprising the steps of: processing at least one surface of at least one of the substrates to form at least one active device of the semiconductor circuit; implanting a region of at least one substrate opposite the processed surface; bonding the plurality of substrates together after the processing and thinning steps so that the at least one processed surface including the at least one active device defines an outer surface of the semiconductor circuit; and annealing the bonded together substrates at an anneal temperature so as to not adversely effect the at least one active device and the implanted region.
Claim 51
Independent Claim
115 words
A method for making a semiconductor circuit from a plurality of semiconductor substrates, the method comprising the steps of: processing at least one surface of at least one of the substrates to form at least one active device of the semiconductor circuit; implanting a region of at least one substrate opposite the processed surface; bonding the plurality of substrates together after the processing and thinning steps so that the at least one processed surface including the at least one active device defines an outer surface of the semiconductor circuit; and annealing the bonded together substrates at an anneal temperature so as to not adversely effect the at least one active device and the implanted region.
Claim 52
Dependent Claim
23 words
A method according to claim 48 further comprising the step of thinning at least one of the substrates prior to the bonding step.
Claim 53
Dependent Claim
18 words
A method according to claim 48 wherein the step of implanting comprises implanting with a lifetime killing implant.
Claim 54
Dependent Claim
28 words
A method according to claim 50 wherein the step of implanting comprises implanting in a predetermined pattern to define a plurality of laterally spaced lifetime killing implant regions.
Claim 55
Dependent Claim
28 words
A method according to claim 51 wherein the lifetime killing implant comprises at least one of protons, helium, carbon, oxygen, argon, silicon, platinum, palladium, gold, iron and nickel.
Claim 56
Dependent Claim
18 words
A method according to claim 48 wherein the step of implanting comprises implanting a dopant into the surface.
Claim 57
Dependent Claim
52 words
A method according to claim 53 wherein the at least one substrate has a first conductivity type dopant; and wherein step of implanting a dopant comprises implanting a dopant of a second conductivity type into the doped layer at a concentration greater than a concentration of the first dopant in the substrate.
Claim 58
Dependent Claim
34 words
A method according to claim 48 wherein the step of processing comprises forming a metal layer; and wherein the anneal temperature is less than a temperature related to a characteristic of the metal layer.
Claim 59
Dependent Claim
27 words
A method according to claim 48 wherein the step of processing comprises forming an aluminum layer; and wherein the anneal temperature is less than about 450° C.
Claim 60
Dependent Claim
42 words
A method according to claim 48 wherein the step of processing comprises forming an aluminum layer, and forming a barrier metal between the aluminum layer and substrate; and wherein the anneal temperature is in a range of about 450 to 550° C.
Claim 61
Dependent Claim
43 words
A method according to claim 48 wherein the step of processing comprises forming at least doped region; further comprising the step of forming at least one metal layer after the annealing step; and wherein the anneal temperature is less than about 800° C.
Claim 62
Dependent Claim
16 words
A method according to claim 48 wherein the anneal temperature is greater than about 400° C.
Claim 63
Dependent Claim
26 words
A method according to claim 48 wherein the step of processing comprises completely processing the at least one substrate to form all active devices and interconnections.
Claim 64
Dependent Claim
20 words
A method according to claim 48 wherein the at least one active device comprises at least one MOSFET control device.
Claim 65
Independent Claim
115 words
A method for making a semiconductor circuit from a plurality of semiconductor substrates, the method comprising the steps of: processing at least one surface of at least one of the substrates to form at least one active device of the semiconductor circuit; forming an epitaxial layer on a surface of at least one substrate opposite the processed surface; bonding the plurality of substrates together after the processing and thinning steps so that the at least one processed surface including the at least one active device defines an outer surface of the semiconductor circuit; and annealing the bonded together substrates at an anneal temperature so as to not adversely effect the at least one active device.
Claim 66
Independent Claim
115 words
A method for making a semiconductor circuit from a plurality of semiconductor substrates, the method comprising the steps of: processing at least one surface of at least one of the substrates to form at least one active device of the semiconductor circuit; forming an epitaxial layer on a surface of at least one substrate opposite the processed surface; bonding the plurality of substrates together after the processing and thinning steps so that the at least one processed surface including the at least one active device defines an outer surface of the semiconductor circuit; and annealing the bonded together substrates at an anneal temperature so as to not adversely effect the at least one active device.
Claim 67
Dependent Claim
23 words
A method according to claim 61 further comprising the step of thinning at least one of the substrates prior to the bonding step.
Claim 68
Dependent Claim
27 words
A method according to claim 61 wherein the step of forming an epitaxial layer comprises forming an epitaxial doped layer to define a relatively thin buffer layer.
Claim 69
Dependent Claim
29 words
A method according to claim 64 wherein the step of forming the doped epitaxial layer comprises forming same to have a dopant concentration greater than an adjacent substrate portion.
Claim 70
Dependent Claim
20 words
A method according to claim 62 wherein the at least one substrate comprises silicon and the epitaxial layer comprises germanium.
Claim 71
Dependent Claim
34 words
A method according to claim 62 wherein the step of processing comprises forming a metal layer; and wherein the anneal temperature is less than a temperature related to a characteristic of the metal layer.
Claim 72
Dependent Claim
27 words
A method according to claim 62 wherein the step of processing comprises forming an aluminum layer; and wherein the anneal temperature is less than about 450° C.
Claim 73
Dependent Claim
42 words
A method according to claim 62 wherein the step of processing comprises forming an aluminum layer, and forming a barrier metal between the aluminum layer and substrate; and wherein the anneal temperature is in a range of about 450 to 550° C.
Claim 74
Dependent Claim
43 words
A method according to claim 62 wherein the step of processing comprises forming at least doped region; further comprising the step of forming at least one metal layer after the annealing step; and wherein the anneal temperature is less than about 800° C.
Claim 75
Dependent Claim
16 words
A method according to claim 62 wherein the anneal temperature is greater than about 400° C.
Claim 76
Dependent Claim
26 words
A method according to claim 62 wherein the step of processing comprises completely processing the at least one substrate to form all active devices and interconnections.
Claim 77
Dependent Claim
20 words
A method according to claim 62 wherein the at least one active device comprises at least one MOSFET control device.
Claim 78
Independent Claim
130 words
A method for making a semiconductor circuit from a plurality of semiconductor substrates, the method comprising the steps of: processing at least one surface of at least one of the substrates to form at least one active device of the semiconductor circuit; implanting a region of at least one substrate opposite the processed surface in a predetermined pattern to define a plurality of laterally spaced lifetime killing implant regions; bonding the plurality of substrates together after the processing and thinning steps so that the at least one processed surface including the at least one active device defines an outer surface of the semiconductor circuit; and annealing the bonded together substrates at an anneal temperature so as to not adversely effect the at least one active device and the implanted regions.
Claim 79
Independent Claim
130 words
A method for making a semiconductor circuit from a plurality of semiconductor substrates, the method comprising the steps of: processing at least one surface of at least one of the substrates to form at least one active device of the semiconductor circuit; implanting a region of at least one substrate opposite the processed surface in a predetermined pattern to define a plurality of laterally spaced lifetime killing implant regions; bonding the plurality of substrates together after the processing and thinning steps so that the at least one processed surface including the at least one active device defines an outer surface of the semiconductor circuit; and annealing the bonded together substrates at an anneal temperature so as to not adversely effect the at least one active device and the implanted regions.
Claim 80
Dependent Claim
23 words
A method according to claim 74 further comprising the step of thinning at least one of the substrates prior to the bonding step.
Claim 81
Dependent Claim
28 words
A method according to claim 75 wherein the lifetime killing implant comprises at least one of protons, helium, carbon, oxygen, argon, silicon, platinum, palladium, gold, iron and nickel.
Claim 82
Dependent Claim
34 words
A method according to claim 74 wherein the step of processing comprises forming a metal layer; and wherein the anneal temperature is less than a temperature related to a characteristic of the metal layer.
Claim 83
Dependent Claim
27 words
A method according to claim 74 wherein the step of processing comprises forming an aluminum layer; and wherein the anneal temperature is less than about 450° C.
Claim 84
Dependent Claim
42 words
A method according to claim 62 wherein the step of processing comprises forming an aluminum layer, and forming a barrier metal between the aluminum layer and substrate; and wherein the anneal temperature is in a range of about 450 to 550° C.
Claim 85
Dependent Claim
43 words
A method according to claim 74 wherein the step of processing comprises forming at least doped region; further comprising the step of forming at least one metal layer after the annealing step; and wherein the anneal temperature is less than about 800° C.
Claim 86
Dependent Claim
16 words
A method according to claim 74 wherein the anneal temperature is greater than about 400° C.
Claim 87
Dependent Claim
26 words
A method according to claim 74 wherein the step of processing comprises completely processing the at least one substrate to form all active devices and interconnections.
Claim 88
Dependent Claim
20 words
A method according to claim 74 wherein the at least one active device comprises at least one MOSFET control device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-11-28 | 2004-05-29 | 2004-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-28 | 2008-05-29 | 2008-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-28 | 2012-05-29 | 2012-11-28 | $7700.00 | Window Closed / Lapsed |