US5240876A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating SOI wafer with SiGe as an etchback film in a BESOI process
Assignee: Intersil Corp
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Filing: 1992-06-01
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Granted: 1993-08-31
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Expires: 2012-06-01
Abstract
Abstract An SOI wafer is formed having a silicon-germanium layer between the epitaxial layer of the device and the insulative layer. The process includes bonding a second substrate to a silicon-germanium layer on a first substrate by an intermediate insulative layer. The first substrate is removed down to the silicon-germanium layer and the silicon layer is epitaxially formed on the silicon-germanium layer.
Inventors
- 👤 Stephen J. Gaul
- 👤 George V. Rouse
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:06
CPC Classifications
H; H10; H10P; H10P36/00; H10P36/03; H10P36/07; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6758; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/904
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
92 words
A method of fabricating a silicon on insulator wafer comprising: depositing a layer of silicon-germanium on a first substrate; bonding a second substrate to said silicon-germanium layer by an intermediate insulative layer; removing said first substrate down to said silicon-germanium layer; epitaxially forming a silicon layer on said silicon-germanium layer to have an exposed surface into which homojunction devices are to be formed; and forming a homojunction device in said epitaxial silicon layer having active regions in said epitaxial silicon layer extending from said exposed surface down to said intermediate insulative layer.
Claim 2
Independent Claim
92 words
A method of fabricating a silicon on insulator wafer comprising: depositing a layer of silicon-germanium on a first substrate; bonding a second substrate to said silicon-germanium layer by an intermediate insulative layer; removing said first substrate down to said silicon-germanium layer; epitaxially forming a silicon layer on said silicon-germanium layer to have an exposed surface into which homojunction devices are to be formed; and forming a homojunction device in said epitaxial silicon layer having active regions in said epitaxial silicon layer extending from said exposed surface down to said intermediate insulative layer.
Claim 3
Dependent Claim
14 words
A method according to claim 1 wherein said first and second substrates are silicon
Claim 4
Dependent Claim
23 words
A method according to claim 1 wherein said silicon-germanium layer is deposited to a thickness in the range of 100 to 3000 angstroms.
Claim 5
Dependent Claim
22 words
A method according to claim 1 wherein said insulative layer has a thickness in the range of 1000 angstroms to 4 microns.
Claim 6
Dependent Claim
24 words
A method according to claim 1 wherein said silicon layer formed to have a thickness in the range of 1000 angstroms to 20 microns.
Claim 7
Dependent Claim
19 words
A method according to claim 1 wherein said silicon-germanium layer is not an active portion of said formed device.
Claim 8
Independent Claim
94 words
A method of fabricating a silicon on insulator wafer comprising: depositing a layer of silicon-germanium on a first substrate; bonding a second substrate to said silicon-germanium layer by an intermediate insulative layer; removing said first substrate down to said silicon-germanium layer; epitaxially forming a silicon layer on said silicon-germanium layer to have an exposed surface into which homojunction devices are to be formed; and forming a homojunction device in said epitaxial silicon layer having active regions in said epitaxial silicon layer wherein said silicon-germanium layer produces a denuded zone in said epitaxial silicon layer.
Claim 9
Independent Claim
94 words
A method of fabricating a silicon on insulator wafer comprising: depositing a layer of silicon-germanium on a first substrate; bonding a second substrate to said silicon-germanium layer by an intermediate insulative layer; removing said first substrate down to said silicon-germanium layer; epitaxially forming a silicon layer on said silicon-germanium layer to have an exposed surface into which homojunction devices are to be formed; and forming a homojunction device in said epitaxial silicon layer having active regions in said epitaxial silicon layer wherein said silicon-germanium layer produces a denuded zone in said epitaxial silicon layer.
Claim 10
Independent Claim
103 words
A method of fabricating a silicon on insulator wafer comprising: depositing a layer of silicon-germanium on a first substrate; bonding a second substrate to said silicon-germanium layer by an intermediate insulative layer; removing said first substrate down to said silicon-germanium layer; epitaxially forming a silicon layer on said silicon-germanium layer to have an exposed surface into which homojunction devices are to be formed; and forming a homojunction device in said epitaxial silicon layer having active regions in said epitaxial silicon layer wherein said silicon-germanium layer forms a layer of low minority carrier lifetime between said epitaxial silicon layer and said intermediate insulative layer.
Claim 11
Independent Claim
103 words
A method of fabricating a silicon on insulator wafer comprising: depositing a layer of silicon-germanium on a first substrate; bonding a second substrate to said silicon-germanium layer by an intermediate insulative layer; removing said first substrate down to said silicon-germanium layer; epitaxially forming a silicon layer on said silicon-germanium layer to have an exposed surface into which homojunction devices are to be formed; and forming a homojunction device in said epitaxial silicon layer having active regions in said epitaxial silicon layer wherein said silicon-germanium layer forms a layer of low minority carrier lifetime between said epitaxial silicon layer and said intermediate insulative layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-08-30 | 1997-03-01 | 1997-08-31 | $2000.00 | Window Closed / Lapsed |
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