← Back to Patent Explorer
US4861393A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor heterostructures having Gex Si1-x layers on Si utilizing molecular beam epitaxy

Assignee: Nokia Bell Labs
•
Filing: 1987-05-28
•
Granted: 1989-08-29
•
Expires: 2007-05-28
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A molecular beam epitaxy method of growing Ge x Si 1-x films on silicon substrate is described. Semiconductor heterostructures using Ge x Si 1-x layers grown on either Ge or Si substrates are described.

Inventors

  • 👤 John C. Bean
  • 👤 Leonard C. Feldman
  • 👤 Anthony T. Fiory

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 10:31
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/822; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/059; Y10S148/067; Y10S148/072; Y10S148/169

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 110 words
A structure comprising a substrate consisting of material selected from the group consisting of Ge and Si and disposed on said substrate, at least one pseudomorphic layer comprising Ge x Si 1-x , x greater than 0.0 and less than or equal to 1.0 when said substrate is Si, and x greater than or equal to 0.0 and less than 1.0 when said substrate is Ge, said at least one pseudomorphic layer having a thickness approximately equal to h c where h c is approximately equal to 0.014 af -2 , a is the silicon lattice constant and f=(b-a)/a where b is the bulk Ge x Si 1-x lattice constant.
Claim 2
Dependent Claim 110 words
A structure comprising a substrate consisting of material selected from the group consisting of Ge and Si and disposed on said substrate, at least one pseudomorphic layer comprising Ge x Si 1-x , x greater than 0.0 and less than or equal to 1.0 when said substrate is Si, and x greater than or equal to 0.0 and less than 1.0 when said substrate is Ge, said at least one pseudomorphic layer having a thickness approximately equal to h c where h c is approximately equal to 0.014 af -2 , a is the silicon lattice constant and f=(b-a)/a where b is the bulk Ge x Si 1-x lattice constant.
Claim 3
Dependent Claim 13 words
A structure as recited in claim 11 in which said substrate comprises Si.
Claim 4
Dependent Claim 23 words
A structure as recited in claim 2 further comprising a layer of Si between said substrate and said Ge x Si 1-x layer.
Claim 5
Dependent Claim 20 words
A structure as recited in claim 3 further comprising a layer of Si on said Ge x Si 1-x layer.
Claim 6
Dependent Claim 18 words
A structure as recited in claim 4 in which at least one of said Si layers is doped.
Claim 7
Dependent Claim 16 words
A structure as recited in claim 1 comprising a plurality of Ge x Si 1-x layers.
Claim 8
Dependent Claim 22 words
A structure as recited in claim 6 further comprising a layer of Si on said plurality of Ge x Si 1-x layers.
Claim 9
Dependent Claim 14 words
A structure as recited in claim 7 in which said Si layer is oxidized.
Claim 10
Dependent Claim 13 words
A structure as recited in claim 1 in which said substrate comprises Ge.
Claim 11
Dependent Claim 22 words
A structure as recited in claim 9 further comprising a layer of Si, said layer contacting said Ge x Si 1-x layer.
Claim 12
Dependent Claim 19 words
A structure as recited in claim 10 in which at least a portion of said Si layer is oxidized.
Claim 13
Dependent Claim 14 words
A structure as recited in claim 10 in which said Si layer is oxidized.

References Cited (Backward Citations)

US3102828A Cited
US3242018A Cited
US3275906A Cited
US3309553A Cited
US3473978A Cited
US3615855A Cited
US3984857A Cited
US3993533A Cited
US4357183A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-08-28 1993-02-27 1993-08-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-08-28 1997-02-27 1997-08-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-08-28 2001-02-27 2001-08-29 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag