US4357183A
Expired / Lapsed
US
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Heteroepitaxy of germanium silicon on silicon utilizing alloying control
Assignee: Massachusetts Institute of Technology
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Filing: 1980-08-13
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Granted: 1982-11-02
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Expires: 2000-08-13
Abstract
Abstract A method and apparatus is described for producing Ge or a Ge 1-x Si x heteroepitaxy film on Si by depositing films of Ge or Ge 1-x Si x on Si and subjecting the body so formed to a controlled temperature environment, wherein the body is rapidly (within a time period t o of more than about 100 microseconds) brought to a predetermined temperature within the alloy range of the deposited film but less than the melting point of Si. The body is then held at such temperature for a relatively short time not to exceed about 3 minutes, including the time period t o .
Inventors
- 👤 John C. C. Fan
- 👤 Ronald P. Gale
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:46
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/018; Y10S148/02; Y10S148/067; Y10S148/072; Y10S438/00; Y10S438/933
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
112 words
The method of fabricating a heteroepitaxial film on silicon comprising the steps of: a. depositing a film of germanium on a surface of a silicon substrate to provide a germanium silicon body; b. bringing the temperature of the body up to its alloy temperature range but less than the melting point of the silicon substrate within a period of longer than 100 microseconds and maintaining the temperature of the body at a predetermined temperature within said range which will produce an alloy having a predetermined ratio of Ge to Si, the duration of this step (b) being less than about 3 minutes; and c. thereafter allowing the body to achieve room temperature.
Claim 2
Independent Claim
112 words
The method of fabricating a heteroepitaxial film on silicon comprising the steps of: a. depositing a film of germanium on a surface of a silicon substrate to provide a germanium silicon body; b. bringing the temperature of the body up to its alloy temperature range but less than the melting point of the silicon substrate within a period of longer than 100 microseconds and maintaining the temperature of the body at a predetermined temperature within said range which will produce an alloy having a predetermined ratio of Ge to Si, the duration of this step (b) being less than about 3 minutes; and c. thereafter allowing the body to achieve room temperature.
Claim 3
Dependent Claim
18 words
The method of claim 1 in which the temperature is maintained in the range of 900° C.-1400° C.
Claim 4
Independent Claim
104 words
The method of fabricating a heteropitaxial film on silicon comprising the steps of: a. co-depositing a film of germanium and silicon on a surface of a silicon substrate to provide a germanium silicon body; b. bringing the temperature of the body up to its alloy temperature range but less than the melting point of the silicon substrate within a period of longer than 100 microseconds and maintaining the temperature of the body at a predetermined temperature within said range which will produce an alloy having a predetermined ratio of Ge to Si, the duration of this step (b) being less than about 3 minutes.
Claim 5
Independent Claim
104 words
The method of fabricating a heteropitaxial film on silicon comprising the steps of: a. co-depositing a film of germanium and silicon on a surface of a silicon substrate to provide a germanium silicon body; b. bringing the temperature of the body up to its alloy temperature range but less than the melting point of the silicon substrate within a period of longer than 100 microseconds and maintaining the temperature of the body at a predetermined temperature within said range which will produce an alloy having a predetermined ratio of Ge to Si, the duration of this step (b) being less than about 3 minutes.
Claim 6
Dependent Claim
16 words
The method of either claim 1 or claim 3 in which the film includes a dopant.
Claim 7
Independent Claim
132 words
The method of fabricating a heteroepitaxial Ge film on a Si substrate comprising: a. depositing a film of Ge 1-x Si x where 0<×<1 and x is the atomic percentage of Si; on a Si substrate to form a Ge 1-x Si x /Si body; b. subjecting the body to a predetermined temperature T max which is within the alloy temperature range of the film Ge 1-x Si x but is below the melting point of Si; c. maintaining said body at said T max for a period of time not to exceed about 3 minutes, including the time (t o ) it takes to bring said body to T max , where t o is not less than about 100 microseconds; and d. allowing the body to cool to room temperature.
Claim 8
Independent Claim
132 words
The method of fabricating a heteroepitaxial Ge film on a Si substrate comprising: a. depositing a film of Ge 1-x Si x where 0<×<1 and x is the atomic percentage of Si; on a Si substrate to form a Ge 1-x Si x /Si body; b. subjecting the body to a predetermined temperature T max which is within the alloy temperature range of the film Ge 1-x Si x but is below the melting point of Si; c. maintaining said body at said T max for a period of time not to exceed about 3 minutes, including the time (t o ) it takes to bring said body to T max , where t o is not less than about 100 microseconds; and d. allowing the body to cool to room temperature.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-01 | 1986-05-03 | 1986-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-01 | 1990-05-03 | 1990-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-01 | 1994-05-03 | 1994-11-02 | $7700.00 | Window Closed / Lapsed |