US3275906A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multiple hetero-layer composite semiconductor device
Assignee: NEC Corp
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Filing: 1963-08-14
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Granted: 1966-09-27
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Expires: 1983-08-14
Abstract
No abstract record available.
Inventors
- 👤 Matsukura Yasuo
- 👤 Oda Jyoji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:22
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/80; H10D10/00; H10D10/80; H10D10/821; H10D10/891; H10D18/00; H10D62/00; H10D62/80; H10D62/82; H10D62/822; H10D62/83; H10D62/832; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/059; Y10S148/067; Y10S148/072; Y10S148/099
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
82 words
IN A SEMICONDUCTOR DEVICE HAVING A PLURALITY OF LAYERS OF SEMICONDUCTOR MATERIAL PRODUCED BY THE EPITAXIAL GROWTH METHOD AND IN WHICH CONTIGUOUS LAYERS ARE OF OPPOSITE CONDUCTIVITY TYPE; AN INTERMEDIATE LAYER IN SAID DEVICE COMPOSED OF ALLOYED SI AND GE OF ONE CONDUCTIVITY TYPE, SAID INTERMEDIATE LAYER BEING BOUNDED ON BOTH SIDES BY LAYERS OF SI OF A CONDUCTIVITY TYPE OPPOSITE SAID ONE TYPE, AND A FURTHER LAYER OF ALLOYED GE AND SI CONTIGUOUS ONE OF SAID OPPOSITE CONDUCTIVITY LAYERS OF SI.
Claim 2
Dependent Claim
82 words
IN A SEMICONDUCTOR DEVICE HAVING A PLURALITY OF LAYERS OF SEMICONDUCTOR MATERIAL PRODUCED BY THE EPITAXIAL GROWTH METHOD AND IN WHICH CONTIGUOUS LAYERS ARE OF OPPOSITE CONDUCTIVITY TYPE; AN INTERMEDIATE LAYER IN SAID DEVICE COMPOSED OF ALLOYED SI AND GE OF ONE CONDUCTIVITY TYPE, SAID INTERMEDIATE LAYER BEING BOUNDED ON BOTH SIDES BY LAYERS OF SI OF A CONDUCTIVITY TYPE OPPOSITE SAID ONE TYPE, AND A FURTHER LAYER OF ALLOYED GE AND SI CONTIGUOUS ONE OF SAID OPPOSITE CONDUCTIVITY LAYERS OF SI.
Claim 3
Dependent Claim
96 words
IN A SEMICONDUCTOR DEVICE HAVING A PLURALITY OF LAYERS OF SEMICONDUCTOR MATERIAL PRODUCED BY THE EPITAXIAL GROWTH METHOD; AN INTERMEDIATE LAYER IN SAID DEVICE COMPOUND OF ALLOYED SI AND GE, SAID LAYER HAVING A GRADUALLY INCREASING CONCENTRATION OF GE IN THE DIRECTION OF LAYER GROWTH, AND SAID LAYER BEING BOUNDED ON THE SIDE OF LEAST GE CONCENTRATION BY AN OPPOSITE CONDUCTIVITY LAYER OF SI, AND ON TTHE SIDE OF GREATEST GE CONCENTRATION BY AN OPPOSITE CONDUCTIVITY LAYER COMPRISING GE IN A CONCENTRATION EQUAL TO THE CONCENTRATION OF GE IN THE INTERMEDIATE LAYER AT THE ADJACENT BOUNDARY.
Claim 4
Dependent Claim
96 words
IN A SEMICONDUCTOR DEVICE HAVING A PLURALITY OF LAYERS OF SEMICONDUCTOR MATERIAL PRODUCED BY THE EPITAXIAL GROWTH METHOD; AN INTERMEDIATE LAYER IN SAID DEVICE COMPOUND OF ALLOYED SI AND GE, SAID LAYER HAVING A GRADUALLY INCREASING CONCENTRATION OF GE IN THE DIRECTION OF LAYER GROWTH, AND SAID LAYER BEING BOUNDED ON THE SIDE OF LEAST GE CONCENTRATION BY AN OPPOSITE CONDUCTIVITY LAYER OF SI, AND ON TTHE SIDE OF GREATEST GE CONCENTRATION BY AN OPPOSITE CONDUCTIVITY LAYER COMPRISING GE IN A CONCENTRATION EQUAL TO THE CONCENTRATION OF GE IN THE INTERMEDIATE LAYER AT THE ADJACENT BOUNDARY.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-09-26 | 1970-03-28 | 1970-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-09-26 | 1974-03-28 | 1974-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-09-26 | 1978-03-28 | 1978-09-27 | $7700.00 | Window Closed / Lapsed |